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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44T1/2
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 250V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Collector-Emitter Voltage
V
=0
BE
Collector-Emitter Voltage 250 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 2 A
Collector Current-Peak 4 A
B Base Current-Continuous 0.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
300 V
31.2 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 4 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44T1/2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
V
BE(
I
CES
I
EBO
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.2 V
)
sat
Collector Cutoff Current VCE= 300V; VBE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 10
μA
μA
D44T1 30 90
h
FE-1
DC Current Gain
D44T2
IC= 0.5A ; VCE= 10V
75
175
D44T1 20
h
FE-2
f
T
DC Current Gain
D44T2
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 10V
= 0.1A ; VCE= 10V; f
I
C
= 1MHz
test
40
15 MHz
t
r
t
stg
t
f
Rise Time 0.3
Storage Time 3.0
Fall Time
IC= 0.5A; IB1= -IB2= 50mA
0.7
μs
μs
μs
isc Website：www.iscsemi.cn
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