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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44Q1/3/5
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
= 125V(Min)- D44Q1
= 175V(Min)- D44Q3
= 225V(Min)- D44Q5
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 7 V
Collector Current-Continuous 4 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
Storage Temperature Range -65~150 ℃
THERMAL CHARACTERISTICS
D44Q1 200
D44Q3 250
D44Q5 300
D44Q1 125
D44Q3 175
D44Q5 225
31.25
1.67
V
V
W
SYMBOL PARAMETER MAX UNIT
R
R
th j-c
th j-a
Thermal Resistance, Junction to Case 4
Thermal Resistance, Junction to Ambient 75
℃/W
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44Q1/3/5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
D44Q1 125
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
h
FE-1
h
FE-2
f
Collector-Emitter
Sustaining Voltage
D44Q3 175
D44Q5
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.3 V
)
sat
I
= 10mA ;IB= 0 B
C
V
225
D44Q1 VCB= 200V;IE= 0 10
Collector
Cutoff Current
D44Q3 VCB= 250V;IE= 0 10
D44Q5 V
= 300V;IE= 0
CB
μA
10
DC Current Gain IC= 0.2A ; VCE= 10V 30
DC Current Gain IC= 2A ; VCE= 10V 20
T
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 20 MHz
C
OB
Output Capacitance IE= 0; VCB= 10V; f= 1MHz 32 pF
Switching Times
t
on
t
stg
t
f
Delay Time 0.4
= 50V
V
Storage Time 5 2.0
Fall Time
CC
= 1A; IB1= -IB2= 0.1A
I
C
1.7
isc Website：www.iscsemi.cn
2
μs
μs
μs
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