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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistors D44D1/2/3/4/5/6
DESCRIPTION
·High DC Current Gain-hFE= 2000(Min)@ IC= 1A
·Complement to Type D45D1/2/3/4/5/6
APPLICATIONS
·Designed for use in power linear and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
D44D1
D44D2
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage -5 V
Collector Current-Continuous -12 A
Collector Current-Peak -20 A
B Base Current-Continuous -0.5 A
D44D3 -60
D44D4 -80
D44D5 -100
D44D6 -120
D44D1
D44D2
D44D3 -60
D44D4 -80
D44D5 -100
D44D6 -120
V
V
P
C
T
J
T
stg
Collector Power Dissipation@TC=25℃ 125 W
Junction Temperature 150 ℃
Storage Temperature Range -65~150 ℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistors D44D1/2/3/4/5/6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
D44D1
D44D2
V
CEO(SUS)
V
CE(
V
CE(
V
BE(on)
V
ECF-1
I
CEO
I
CBO
I
EBO
h
FE
sat
sat
Collector-Emitter
Sustaining Voltage
D44D3 -60
IC= -30mA ;IB=0 B
V
D44D4 -80
D44D5 -100
D44D6
Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA B -2.0 V
)-1
Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V
)-2
-120
Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.5 V
C-E Diode Forward Voltage IF= -5A -2.0 V
Collector Cutoff Current VCE= 1/2V
= V
V
CB
Collector Cutoff Current
V
CB
CBOmax;IE
= 1/2V
; IB= 0 -0.2 mA
CEOmax
= 0
CBOmax;IE
= 0;TC= 150℃
-0.4
-2.0
mA
Emitter Cutoff Current VEB= -5V; IC=0 -5 mA
DC Current Gain IC= -1A ; VCE= -2V 2000
isc Website：www.iscsemi.cn
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