Datasheet D1027UK Datasheet (Seme)

D1027UK

Prelim. 2/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

DIM Millimetres Tol. Inches Tol.

A 19.05 0.50 0.75 0.020
B 10.77 0.13 0.424 0.005
C 45° 5° 45° 5°
D 9.78 0.13 0.385 0.005
E 5.71 0.13 0.225 0.005
F 27.94 0.13 1.100 0.005
G 1.52R 0.13 0.060R 0.005
H 10.16 0.13 0.400 0.005

I 22.22 MAX 0.875 MAX

J 0.13 0.02 0.005 0.001
K 2.72 0.13 0.107 0.005
M 1.70 0.13 0.067 0.005
N 5.08 0.50 0.200 0.020
O 34.03 0.13 1.340 0.005
P 1.57R 0.08 0.062R 0.003

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

438W

70V

±20V

30A

–65 to 150°C

200°C

MECHANICAL DATA

M

KJ

I

ON

A

C
(2 pls)

D

F

E

(4 pls)

B

G

(ty p)

P

(2 pls)

1

5

4

32

H

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

150W – 28V – 175MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

DR

PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1
PIN 3 DRAIN 2 PIN 4 GATE 2
PIN 5 GATE 1

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 1 MHz to 200 MHz

METAL GATE RF SILICON FET

TetraFET

D1027UK

Prelim. 2/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

70

6
1

17

4.8

0.1

13
50

20:1

360
180

15

VGS= 0 ID= 100mA

VDS= 28V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 6A
ID= 10mA VDS= V

GS

PO= 150W
VDS= 28V IDQ= 2.4A
f = 175MHz

VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

V

mA

m

A

V

mhos

V

dB

%
—

pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*

Gate Threshold Voltage
Matching Between Sides

Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max. 0.4°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%

TOTAL DEVICE

PER SIDE

PER SIDE

BV

DSS

I

DSS

I

GSS

V

GS(th)

g

fs

V

GS(th)match

G

PS

h

VSWR

C

iss

C

oss

C

rss

D1027UK

Prelim. 2/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Figure 1 – Power Output and Efficiency

vs. Power Input.

Figure 2 – Power Output & Gain

vs. Power Input.

Figure 3 – IMD vs. Output Power.

Figure 4 – IMD & Gain vs. I

dq

f = 175MHz

Idq= 2A

Vds= 28V

f = 175MHz

Idq= 2A

Vds= 28V

f1= 175.0 MHz
f2= 175.1 MHz

VDS= 28V

f1= 175.0MHz
f2= 175.1MHz

P

out

= 130W PEP

Vds= 28V

2nd harmonic = -28dBc
3rd harmonic = -40dBc

output at 350W

400
350
300
250

P

out

200

W

150
100

50

0

0 2 4 6 8 10 12 14 16 18 20

P

W

in

Pout
Drain Efficiency

100
90
80
70

Drain Efficiency

60

%

50
40
30
20

-20

-30

IMD

-40

dBc

-50

400
350
300
250

P

out

200

W

150
100

50

0

0 2 4 6 8 10 12 14 16 18 20

Pout
Gain

P

W

in

-20

-30

IMD

dBc

-40

20

18

16

14

12

12

18.5

18.5

17.5

17.5

16.5

16.5

Gain

dB

Gain

dB

-60
20 40 60 80 100 120 140 160 180

IMD3 at Idq=1.5A
IMD3 at Idq=2.5A

Pout W PEP

-50
0 0.5 1 1.5 2 2.5

IMD3
IMD5
Gain

I

A

dq

15.5

15.5

D1027UK

Prelim. 2/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

0.20.512510180

0

fZ

L

MHz R jX

175 4 -0.5
200 4.5 -4
225 3.5 -5

160

170

180

-170

150

0

-160

225

-150

140

175

130

-140

100

110

120

0.2

0.5

90

80

1

2

ZLopt

Impedance measured Drain - Drain

-130

-120

-110

-100

-80

-90

70

60

50

40

30

20

10

5

10

-40

-50

-60

-70

0

-10

-20

-30

Matching
Network

Z

Lopt

D1027UK

Prelim. 2/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

0.20.512510180

0

fZs

MHz R jX

175 1.6 -1.5
200 1.6 -1.2
225 2.3 -2

Matching
Network

ZS

180

opt

160

170

-170

150

0

175

-160

225

200

-150

140

130

-140

120

0.2

ZSopt

-130

110

100

0.5

90

80

70

1

2

Impedance measured Gate - Gate

-120

-110

-100

-90

-70

-80

60

50

40

30

20

10

5

10

-40

-50

-60

0

-10

-20

-30

D1027UK

Prelim. 2/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

D1027UK 175MHz TEST FIXTURE

T1,2,3 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens

A1 x 1 2-hole core.
T4,5 14cm Storm Products EXE18 19/30 S1TW coaxial cable.
T6 11cm Storm Products EXE18 19/30 S1TW coaxial cable
L1 6 turns 1.2mm dia wire, 5mm internal diameter
L2 1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core

L2

Gate-Bias

100n 1

T2

1u

T1

2-18 pF

1u

T3

10k

1n

100k

L1

D 1027UK

47pF

D 1027UK

12

90pF

100n

1n

T4

T5

1000u

680pF

2-18 pF

680pF

28V

820K

T6