Datasheet D1007UK Datasheet (Seme)

D1007UK

Prelim. 6/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage *

BV

GSS

Gate – Source Breakdown Voltage *

I

D(sat)

Drain Current *

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

100W

70V

±20V

5A

–65 to 150°C

200°C

MECHANICAL DATA

F

A

C

B

(

2 pls

)

K

2

3

E

1

G (4 pls

)

5

4

D

N

M

JIH

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

40W – 28V – 500MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

rss

• USEFUL POat 1 GHz

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

DK

PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1

PIN 2 DRAIN 1 PIN 4 GATE 2

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

DIM mm Tol. Inches Tol.

A 6.45 0.13 0.254 0.005 B 1.65R 0.13 0.065R 0.005 C45° 5° 45° 5° D 16.51 0.76 0.650 0.03 E 6.47 0.13 0.255 0.005 F 18.41 0.13 0.725 0.005

G 1.52 0.13 0.060 0.005

H 4.82 0.25 0.190 0.010

I 24.76 0.13 0.975 0.005 J 1.52 0.13 0.060 0.005 K 0.81R 0.13 0.032R 0.005

M 0.13 0.02 0.005 0.001

N 2.16 0.13 0.085 0.005

* Per Side

Parameter Test Conditions Min. Typ. Max. Unit

D1007UK

Prelim. 6/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

70

1 1

17

0.8

13 50

20:1

60 30

2.5

VGS= 0 ID= 100mA

VDS= 28V VGS= 0 VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 1A

PO= 40W VDS= 28V IDQ= 0.4A f = 400MHz

VDS= 28V VGS= –5V f = 1MHz VDS= 28V VGS= 0 f = 1MHz VDS= 28V VGS= 0 f = 1MHz

V

mA

m

A V S

dB

%

—

pF pF pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage *

g

fs

Forward Transconductance *

G

PS

Common Source Power Gain

h

Drain Efficiency

VSWR Load Mismatch Tolerance

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max. 1.75°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%

TOTAL DEVICE

PER SIDE

D1007UK

Prelim. 6/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

Figure 1

Power Output and efficiency vs. Power Input.

Figure 2

Power Output and Gain vs. Power Input.

Figure 3

IMD Vs. Output Power.

OPTIMUM SOURCE AND LOAD IMPEDANCE

Frequency Z

S

Z

L

MHz

WW

400MHZ 10.7 - j35.4 13.8 - j22.2

0 2 4 6 8 10 12

P

in

W

0

10

20

30

40

50

60

P

out

W

20

30

40

50

60

70

80

D rain E fficiency

%

Pout D rain Efficiency

f = 4 0 0 M H z Id q = 0 .4 A Vd s = 28V

0 2 4 6 8 10 12

P

in

W

0

10

20

30

40

50

60

P

out

W

6

8

10

12

14

16

18

Gain

dB

Pout Gain

f = 4 0 0 M H z Id q = 0 .4 A Vd s = 28V

0 10 20 30 40 50 60

P

out

W PEP

-60

-50

-40

-30

-20

-10

0

IM D 3

dBc

IM D 3

f1 = 4 0 0 M H z f2 = 4 0 0 .1 M H z Id q = 0 .4 A Vd s = 28V

!Freq S11 S21 S12 S22 !MHz mag ang mag ang mag ang mag ang 100 0.767 -135 22.646 88 0.0155 9 0.531 -103 200 0.813 -153 10.116 57 0.0099 4 0.692 -131 300 0.841 -161 5.623 39 0.0076 49 0.794 -143 400 0.861 -169 3.548 25 0.0130 79 0.841 -151 500 0.882 -175 2.820 20 0.0210 78 0.875 -156 600 0.902 180 2.093 14 0.0285 78 0.910 -161 700 0.923 174 1.365 9 0.0376 77 0.944 -166 800 0.912 170 1.096 2 0.0457 66 0.944 -170 900 0.923 164 0.902 -3 0.0484 66 0.933 -176 1000 0.923 161 0.724 -4 0.0596 64 0.944 -177

!VDS= 28V, IDQ= 1A # MHZ S MA R 50

Typical S Parameters

D1007UK

Prelim. 6/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

BIAS

D1007UK TEST FIXTURE

Substrate 1.6mm FR4 All microstrip lines W = 2.5mm

T1 45mm 50 OHM UT34 semi-rigid coax T2, T3 55mm 50 OHM UT 34 semi-rigid coax T4, T5 25mm microstrip line T6, T7 10mm microstrip line T8, T9 45mm 25 OHM UT 34-25 semi-rigid coax T10 60mm 50OHM UT34 semi-rigid coax L1 4 turns 19swg enamelled copper wire, 7mm i.d. L2 2.5 turns of 19swg enamelled copper wire on T50-6 ferrite toroid

100nF

30pF

10K

620pF

L2

39

T6

T2

T4

L1

T8

620pF

30pF

100nF

+28V

10uF

IN P U T

2-18pF

T1

620pF

T3

2-18pF

T5

D1007UK

1-3.5pF

T9

620pF

T7

T10

OUTPUT