Page 1
MECHANICAL DATA
C
TetraFET
D1019UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
E
F
PIN 1 DRAIN
PIN 3 GATE
DIM mm Tol. Inches Tol.
A 26.16 0.13 1.030 0.015
B 5.72 0.13 0.225 0.005
C 45° 5° 45° 5°
D 7.11 0.13 0.280 0.005
E 0.13 0.02 0.005 0.001
F 1.52 0.13 0.55 0.005
G 0.43 0.20 0.060 0.008
H 7.67 REF 0.120 REF
1
2
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
4
A
3
D
PIN 2 SOURCE
PIN 4 SOURCE
B
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
G
H
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
50W
70V
±20V
5A
–65 to 150°C
200°C
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Page 2
D1019UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 1A
PO= 20W
VDS= 28V IDQ= 0.1A
f = 175MHz
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
GS
70
1
1
17
0.8
16
50
20:1
60
30
2.5
V
mA
µA
V
S
dB
%
—
pF
pF
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 3.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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Page 3
D1019UK
45
40
35
30
P
out
25
20
W
15
10
5
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P
W
in
VDS = 28V
ZDQ = 0.1A
f = 175MHz
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3
-25
dBc
-30
-35
-40
-45
0 5 10 15 20 25 30 35 40
P
out
W PEP
VDS = 28V
f1 = 175.0MHz
f2 = 175.1MHz
IDQ = 0.1A
= 0.5A
I
DQ
90
80
70
60
50
40
30
20
10
0
Efficiency
%
45
40
35
30
P
out
25
20
W
15
10
5
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P
in
W
VDS = 28V
ZDQ = 0.1A
f = 175MHz
Pout
Gain
19
18
17
16
15
14
13
12
11
10
Gain
dB
Figure 2 – Power Output & Gain
vs. Power Input.
D1019UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency Z
S
MHz ΩΩ
175MHz 5 + j14 12 – j14
Z
L
Figure 3 – IMD vs. Output Power.
Typical S Parameters
!VDS= 28V, IDQ= 0.1A
# MHZ S MA R 50
!Freq S11 S21 S12 S22
MHz mag ang mag ang mag ang mag ang
50 0.780 -116 18 112 0.034 25 0.642 -85
100 0.775 -135 9.312 85 0.030 11 0.577 -103
150 0.795 -149 6.077 68 0.022 14 0.613 -116
200 0.826 -159 4.193 53 0.017 44 0.669 -128
250 0.853 -169 3.216 43 0.023 74 0.715 -139
300 0.878 -179 2.566 35 0.039 89 0.759 -150
350 0.903 171 1.991 23 0.052 86 0.801 -161
400 0.923 161 1.655 18 0.070 84 0.839 -173
450 0.944 151 1.322 9 0.080 80 0.878 177
500 0.963 142 1.121 4 0.098 76 0.914 167
550 0.978 136 0.899 -2 0.108 72 0.945 159
600 0.985 131 0.762 -7 0.119 66 0.966 153
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
6/99
Page 4
D1019UK
10-30pF
T1 10mm
T2 13mm
T3 12mm
T4 4mm
15
Gate-Bias
L1
T1 T2
10-30pF
10K
10K
10nF
9 x 6mm
contact
pad
D1019UK
9 x 6 mm
contact pad
L4
L2
T3
4.7pF
D1019UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
L1 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L2 10 turns 19swg enamelled copper wire, 6mm i.d.
L3 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L4 13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
+28V
1nF100nF 10uF
10nF
L3
T4
16-100pF
16-100pF
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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