MECHANICAL DATA
TetraFET
D1008UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
B
(
2 pls
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
DIM mm Tol. Inches Tol.
A 6.45 0.13 0.254 0.005
B 1.65R 0.13 0.065R 0.005
C 45° 5° 45° 5°
D 16.51 0.76 0.650 0.03
E 6.47 0.13 0.255 0.005
F 18.41 0.13 0.725 0.005
G 1.52 0.13 0.060 0.005
H 4.82 0.25 0.190 0.010
I 24.76 0.13 0.975 0.005
J 1.52 0.13 0.060 0.005
K 0.81R 0.13 0.032R 0.005
M 0.13 0.02 0.005 0.001
N 2.16 0.13 0.085 0.005
C
)
1
E
JIH
A
3
2
5
4
G (4 pls
F
DK
PIN 2 DRAIN 1
PIN 4 GATE 2
K
)
DMOS RF FET
D
80W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
175W
70V
±20V
10A
–65 to 150°C
200°C
9/99
D1008UK
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
= 25°C unless otherwise stated)
case
PER SIDE
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 2A
GS
TOTAL DEVICE
PO= 80W
VDS= 28V IDQ= 0.4A
f = 400MHz
PER SIDE
70
2
1
17
1.6
13
50
20:1
120
60
5
V
mA
µA
V
S
dB
%
—
pF
pF
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
9/99
D1008UK
125
100
75
P
out
W
50
25
0
0 4 8 12 16 20
Idq= 0.4A
VDS= 28V
PinW
f1= 400MHz
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-15
-20
-25
IMD3
-30
dBc
-35
-40
-45
-50
02040 80
P
out
W PEP
f1= 400.0MHz
f2= 400.1MHz
VDS= 28V
IDQ= 0.8A
60
100
80
60
40
20
0
Drain
Efficiency
%
125
100
f1= 400.0MHz
75
P
out
W
50
25
0
0 4 8 12 16 20
PinW
Idq= 0.4A
VDS= 28V
Pout
Gain
17
15
13
Gain
dB
11
9
7
Figure 2 – Power Output & Gain
vs. Power Input.
D1008UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency Z
S
MHz ΩΩ
400 1.5 + j0.2 5.0 + j2.0
Z
L
Figure 3 – IMD vs. Output Power.
Typical S Parameters
! Vds=28V, Idq=1A
# MHz S MA R 50
!Freq S11 S21 S12 S22
MHz mag ang mag ang mag ang mag ang
100 0.794 -158 14.622 69 0.0115 -7 0.61 -145
200 0.881 -167 5.821 42 0.0061 3 0.794 -156
300 0.923 -171 3.02 28 0.0068 60 0.871 -162
400 0.923 -176 1.82 18 0.117 77 0.902 -167
500 0.937 -179 1.439 15 0.0168 76 0.923 -169
600 0.952 177 1.057 13 0.0234 75 0.945 -171
700 0.966 174 0.676 10 0.0285 74 0.966 -174
800 0.966 171 0.543 5 0.0335 69 0.955 -177
900 0.977 167 0.447 1 0.0394 64 0.966 178
1000 0.966 165 0.359 1 0.0432 64 0.955 178
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
9/99
D1008UK
GATE BIAS
INPUT
1nF
T1
6.8K
100pF
100pF
100K
T2
L1
T3
D1008UK TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
T1 70mm 50Ω UT34 SEMI RIGID COAX
T2,T3 85mm 25Ω UT70-25 SEMI RIGID COAX
T4,T5 100mm 15Ω UT85-15 SEMI RIGID COAX
T6 70mm 50Ω UT85 SEMI RIGID COAX
6 x 3.5mm
contact pad
2-18pF
6 x 3.5mm
contact pad
L4
10
6 x 3.5mm
contact pad
D1008
D1008
6 x 3.5mm
contact pad
1nF
L3
T4
100pF
T5
1-3.5pF
100pF
6.8K
Ω
100uF
1nF
T6
L1 3.5 turns of 24swg ECW, 3mm ID
L2 5.5 turns of 24swg ECW, 4mm ID
L3 4 turns of 21swg ECW, 7mm ID
L4 3 turns of 21swg ECW on Fair-Rite FT50-75 core
+28V
OUTPUT
L2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
9/99
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