MECHANICAL DATA
TetraFET
D1004UK
METAL GATE RF SILICON FET
GOLD METALLISED
D
(2 pls)
B
A
F
PIN 1 SOURCE (COMMON)
PIN 3 SOURCE (COMMON)
PIN 5 DRAIN
DIM mm Tol. Inches Tol.
A 6.35 DIA 0.13 0.250 DIA 0.005
B 3.17 DIA 0.13 0.125 DIA 0.005
C 18.41 0.25 0.725 0.010
D 5.46 0.13 0.215 0.005
E 5.21 0.13 0.205 0.005
F 7.62 MAX 0.300 MAX
G 21.59 0.38 0.850 0.015
H 3.94 0.13 0.155 0.005
I 12.70 0.13 0.500 0.005
J 0.13 0.03 0.005 0.001
K 24.76 0.13 0.975 0.005
M 2.59 0.13 0.102 0.005
N 4.06 0.25 0.160 0.010
1
C
E
3
2
G
5
4
H
I
KM N
DT
PIN 2 GATE
PIN 4 SOURCE (COMMON)
J
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
rss
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
175W
70V
±20V
20A
–65 to 150°C
200°C
Prelim. 6/99
D1004UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 4A
PO= 80W
VDS= 28V IDQ= 0.4A
f = 175MHz
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
GS
70
4
1
17
3.2
16
50
20:1
240
120
10
V
mA
µA
V
S
dB
%
—
pF
pF
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 6/99
D1004UK
150
125
100
P
out
75
W
50
25
0
012345678
Pin W
VDS= 28V
I
= 0.4A
DQ
f = 175MHz
Pout
Drain Efficiency
80
70
60
50
40
30
20
Efficiency
%
Figure 1 – Power Output and Efficiency
vs. Power Input.
-20
-25
-30
IMD
dBc
-35
-40
-45
10
20 30 40 50 60 70 80 90
P
out
VDS= 28V
I
W PEP
f
= 175.0MHz
1
f
= 175.1MHz
2
= 0.4A
DQ
IMD3
150
125
100
P
out
75
W
50
VDS= 28V
I
= 0.4A
25
0
DQ
f = 175MHz
012345678
Pin W
Pout
Gain
22
20
18
Gain
16
dB
14
12
10
Figure 2 – Power Output & Gain
vs. Power Input.
D1004UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency Z
S
MHz ΩΩ
175MHz 2.2 + j1.9 3.2 - j0.5
Z
L
Figure 3 – IMD vs. Output Power.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 6/99
Gate-Bias
1-70pF
T1
5.1nF
1-70pF
D1004UK
12
Ω
10k
Ω
10nF
10k
Ω
L1
T2
8 x5 mm
contact pad
D1004K
8 x5 mm
contact pad
L3
L4
100nF
5.1nF
L2
T3
1-70pF
+28V
22µF
1-70pF
T1 7.5mm
T2 6mm
T3 8mm
D1004UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W=4.4mm
L1 Hairpin loop 16swg 13mm dia
L2 Hairpin loop 16swg 11mm dia
L3 10 turns 18swg enamelled copper wire, 4mm i.d.
L4 12 turns 18swg enamelled copper wire on 22.7mm
o.d. ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 6/99
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