
MECHANICAL DATA
TetraFET
D1003UK
METAL GATE RF SILICON FET
GOLD METALLISED
H
PIN 1 SOURCE
PIN 3 SOURCE
DIM mm Tol. Inches Tol.
A 24.76 0.13 0.975 0.005
B 18.42 0.13 0.725 0.005
C 45° 5° 45° 5°
D 6.35 0.13 0.25 0.005
E 3.17 Dia. 0.13 0.125 Dia. 0.005
F 5.71 0.13 0.225 0.005
G 12.7 Dia. 0.13 0.500 Dia. 0.005
H 6.60 REF 0.260 REF
I 0.13 0.02 0.005 0.001
J 4.32 0.13 0.170 0.005
K 3.17 0.13 0.125 0.005
M 26.16 0.25 1.03 0.010
A
B
1
43
M
G
K
DM
PIN 2 DRAIN
PIN 4 GATE
MULTI-PURPOSE SILICON
C
DMOS RF FET
2
D
E
F
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
J
I
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
60W – 28V – 175MHz
SINGLE ENDED
rss
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
117W
70V
±20V
15A
–65 to 150°C
200°C
Prelim. 6/99

D1003UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 3A
PO= 60W
VDS= 28V IDQ= 0.3A
f = 175MHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
GS
70
1
1
17
2.4
16
50
20:1
180
90
7.5
V
mA
µA
V
S
dB
%
—
pF
pF
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 1.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 6/99

D1003UK
140
120
100
80
P
out
60
W
Pin W
VDS= 28V
I
DQ
f = 175MHz
40
20
0
012345678
Pout
Drain Efficiency
= 0.3A
80
70
60
50
Drain Efficiency
%
40
30
20
10
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
-25
IMD3
-30
dBc
-35
-40
-45
-50
0 20 40 60 80 100 120
P
out
VDS= 28V
f
= 175.0MHz
1
f
= 175.1MHz
2
W PEP
Idq = 0.3A
Idq = 2A
140
120
100
80
P
out
W
60
40
20
0
012345678
VDS= 28V
I
= 0.3A
DQ
f = 175MHz
Pout
Gain
Pin W
17
17
16
16
15
15
14
14
Gain
dB
13
13
12
12
11
11
10
10
Figure 2 – Power Output & Gain
vs. Power Input.
D1003UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency Z
S
MHz ΩΩ
175MHz 2.0 – j4.3 3.7 – j4.5
Z
L
Figure 3 – IMD vs. Output Power.
Typical S Parameters
!VDS= 28V, IDQ= 0.3A
# MHZ S MA R 50
!Freq S11 S21 S12 S22
MHz mag ang mag ang mag ang mag ang
70 0.83 -156.8 6.9 59.9 0.018 -16.7 0.65 -137.0
100 0.87 -163.3 4.3 46.9 0.012 -15.5 0.75 -147.2
150 0.91 -171.0 2.3 31.5 0.007 37.1 0.84 -159.7
200 0.93 -177.6 1.4 22.6 0.013 81.0 0.90 -168.8
250 0.95 177.6 0.9 14.3 0.022 86.6 0.93 -175.0
300 0.97 173.6 0.7 10.5 0.032 86.9 0.95 179.5
350 0.96 168.6 0.5 4.0 0.039 80.0 0.96 175.3
400 0.98 165.0 0.4 3.9 0.048 80.0 0.98 172.0
450 0.98 161.9 0.3 2.9 0.053 77.5 0.98 169.8
500 0.97 159.3 0.3 2.1 0.064 74.8 0.97 166.5
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 6/99

5-57pF
Gate-Bias
T1
5-57pF
D1003UK
+28V
10k
1nF
10nF
10K
D1003UK
T2
L1
7 x 7mm
contact pad
7 x 7 mm
contact pad
L3
L2
10nF
T3
1µF
22µF
5-57pF
T4
5-57pF
T1 8mm
T2 22mm
T3 18mm
T4 4.5mm
D1003UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W= 4.4mm
L1 Hairpin loop 16swg 15.5mm dia.
L2 Hairpin loop 16swg 10mm dia.
L3 11 turns 18swg enamelled copper wire, 10mm i. d.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 6/99