Datasheet D1003UK Datasheet (Seme)

MECHANICAL DATA

TetraFET

D1003UK

METAL GATE RF SILICON FET

GOLD METALLISED

H

PIN 1 SOURCE PIN 3 SOURCE

DIM mm Tol. Inches Tol.

A 24.76 0.13 0.975 0.005 B 18.42 0.13 0.725 0.005 C 45° 5° 45° 5° D 6.35 0.13 0.25 0.005 E 3.17 Dia. 0.13 0.125 Dia. 0.005 F 5.71 0.13 0.225 0.005 G 12.7 Dia. 0.13 0.500 Dia. 0.005 H 6.60 REF 0.260 REF

I 0.13 0.02 0.005 0.001

J 4.32 0.13 0.170 0.005 K 3.17 0.13 0.125 0.005 M 26.16 0.25 1.03 0.010

A B

1

43

M

G

K

DM

PIN 2 DRAIN PIN 4 GATE

MULTI-PURPOSE SILICON

C

DMOS RF FET

2

D

E

F

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

J

I

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 16 dB MINIMUM

APPLICATIONS

• HF/VHF COMMUNICATIONS

from 1 MHz to 175 MHz

60W – 28V – 175MHz

SINGLE ENDED

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ABSOLUTE MAXIMUM RATINGS (T

P

D

BV BV I

D(sat)

T

stg

T

j

DSS GSS

Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature

= 25°C unless otherwise stated)

case

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

117W

70V

±20V

15A

–65 to 150°C

200°C

Prelim. 6/99

D1003UK

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter Test Conditions Min. Typ. Max. Unit

BV

I

DSS

I

GSS

V

GS(th)

g

fs

G

PS

η Drain Efficiency VSWR Load Mismatch Tolerance C

iss

C

oss

C

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* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

Drain–Source

DSS

Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage * Forward Transconductance * Common Source Power Gain

Input Capacitance Output Capacitance Reverse Transfer Capacitance

VGS= 0 ID= 100mA

VDS= 28V VGS= 0 VGS= 20V VDS= 0

ID= 10mA VDS= V VDS= 10V ID= 3A PO= 60W VDS= 28V IDQ= 0.3A

f = 175MHz VDS= 0 VGS= –5V f = 1MHz VDS= 28V VGS= 0 f = 1MHz VDS= 28V VGS= 0 f = 1MHz

GS

70

1 1

17

2.4 16 50

20:1

180

90

7.5

V

mA

µA

V S

dB

%

— pF pF pF

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

R

THj–case

Thermal Resistance Junction – Case Max. 1.5°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Prelim. 6/99

D1003UK

140

120

100

80

P

out

60

W

Pin W

VDS= 28V

I

DQ

f = 175MHz

40

20

0

012345678

Pout Drain Efficiency

= 0.3A

80

70

60

50

Drain Efficiency %

40

30

20

10

Figure 1 – Power Output and Efficiency

vs. Power Input.

-10

-15

-20

-25

IMD3

-30

dBc

-35

-40

-45

-50 0 20 40 60 80 100 120

P

out

VDS= 28V

f

= 175.0MHz

1

f

= 175.1MHz

2

W PEP

Idq = 0.3A Idq = 2A

140

120

100

80

P

out

W

60

40

20

0

012345678

VDS= 28V

I

= 0.3A

DQ

f = 175MHz

Pout Gain

Pin W

17

16

15

14

Gain

dB

13

12

11

10

Figure 2 – Power Output & Gain

vs. Power Input.

D1003UK

OPTIMUM SOURCE AND LOAD IMPEDANCE

Frequency Z

S

MHz ΩΩ

175MHz 2.0 – j4.3 3.7 – j4.5

Z

L

Figure 3 – IMD vs. Output Power.

Typical S Parameters

!VDS= 28V, IDQ= 0.3A # MHZ S MA R 50

!Freq S11 S21 S12 S22 MHz mag ang mag ang mag ang mag ang

70 0.83 -156.8 6.9 59.9 0.018 -16.7 0.65 -137.0 100 0.87 -163.3 4.3 46.9 0.012 -15.5 0.75 -147.2 150 0.91 -171.0 2.3 31.5 0.007 37.1 0.84 -159.7 200 0.93 -177.6 1.4 22.6 0.013 81.0 0.90 -168.8 250 0.95 177.6 0.9 14.3 0.022 86.6 0.93 -175.0 300 0.97 173.6 0.7 10.5 0.032 86.9 0.95 179.5 350 0.96 168.6 0.5 4.0 0.039 80.0 0.96 175.3 400 0.98 165.0 0.4 3.9 0.048 80.0 0.98 172.0 450 0.98 161.9 0.3 2.9 0.053 77.5 0.98 169.8 500 0.97 159.3 0.3 2.1 0.064 74.8 0.97 166.5

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Prelim. 6/99

5-57pF

Gate-Bias

T1

5-57pF

D1003UK

+28V

10k

1nF

10nF

10K

D1003UK

T2

L1

7 x 7mm

contact pad

7 x 7 mm contact pad

L3

L2

10nF

T3

1µF

22µF

5-57pF

T4

5-57pF

T1 8mm T2 22mm T3 18mm T4 4.5mm

D1003UK 175MHz TEST FIXTURE

Substrate 1.6mm PTFE/ glass, Er= 2.5

All microstrip lines W= 4.4mm

L1 Hairpin loop 16swg 15.5mm dia. L2 Hairpin loop 16swg 10mm dia. L3 11 turns 18swg enamelled copper wire, 10mm i. d.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Prelim. 6/99