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CZT2907A
PNP SILICON TRANSISTOR
SOT-223 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CZT2907A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose amplifier and
switching applications.
60 V
60 V
5.0
600 mA
2.0 W
-65 to +150
62.5 oC/W
o
V
C
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CBO
I
CEV
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
h
FE
VCB=50V 10 nA
VCB=50V, TA=125oC 10 µA
VCE=30V, VBE=0.5V 50 nA
IC=10µA 60 V
IC=10mA 60 V
IE=10µA 5.0 V
IC=150mA, IB=15mA 0.4 V
IC=500mA, IB=50mA 1.6 V
IC=150mA, IB=15mA 1.3 V
IC=500mA, IB=50mA 2.6 V
VCE=10V, IC=0.1mA 75
VCE=10V, IC=1.0mA 100
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SYMBOL TEST CONDITIONS MIN MAX UNITS
h
h
h
f
C
C
t
t
t
t
t
t
FE
FE
FE
T
ob
ib
on
d
r
off
s
f
All dimensions in inches (mm).
VCE=10V, IC=10mA 100
VCE=10V, IC=150mA 100 300
VCE=10V, IC=500mA 50
VCE=20V, IC=50mA, f=100MHz 200 MHz
VCB=10V, IE=0, f=1.0MHz 8.0 pF
VBE=2.0V, IC=0, f=1.0MHz 30 pF
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 45 ns
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 ns
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 40 ns
VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns
VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns
VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
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