Datasheet CPH6404 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6338

CPH6404

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KD Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %142A

PD

Mounted on a ceramic board (900mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A3=

)no(SD

2IDV,A1=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2151A

[CPH6404]

2.8

0.9

nimpytxam

0.15

0.2

0.05

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6

03V
02±V
6A

6.1W

˚C
˚C

sgnitaR

tinU

2.9

5

6

1

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A3=2.46 S

D

V01=3334mΩ

SG

V4=8486mΩ

SG

zHM1=f,V01=055Fp
zHM1=f,V01=031Fp
zHM1=f,V01=08Fp

4

1.6 0.60.6

23

0.95

0.7 0.2

0.4

30300TS (KOTO) TA-1931 No.6338-1/4

CPH6404

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A6=

0=68.02.1V

SG

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

ID=3A

RL=5Ω

D

V

OUT

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS55sn
tiucriCtseTdeificepseeS05sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A6=31Cn
A6=5.1Cn
A6=2.2Cn

tinU

P.G

9

8

7

6

–A

D

5

4

3

Drain Current, I

2

1

0

10.0V

0

0.2

Drain-to-Source Voltage, VDS–V

160

140

–mΩ

120

100

DS(on)

80

60

ID=1A

40

20

Static Drain-to-Source

ON-State Resistance, R

0

0 2 4 6 8 10 12

RDS(on) -- V

3A

Gate-to-Source Voltage, V

50Ω

I

6.0V

D

3.5V

-- V

4.0V

3.0V

S

DS

CPH6404

VGS=2.5V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

GS

14 16 18 20

–V

GS

IT01234

Ta=25°C

IT01236

I

-- V

D

10

VDS=10V

9

8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

GS

Gate-to-Source Voltage, VGS–V

100

80

–mΩ

60

DS(on)

40

20

Static Drain-to-Source

ON-State Resistance, R

0

--40 --20 0 20 40 60 80 100 120 140

--60

RDS(on) -- Ta

=4V

GS

=1A, V

I

D

=10V

GS

=3A, V

I

D

Ambient Temperature, Ta – ˚C

°C

Ta=--25

75

25°C

°C

IT01235

IT01237

No.6338-2/4

fs|–S

y

Forward Transfer Admittance, |

1000

Switching Time, SW Time – ns

V

Gate-to-Source Voltage, V

100

10

1.0

0.1

0.01

100

10

1.0

10

–

GS

2.0

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

0.01

7
5

3
2

7
5

3
2

7
5

t

r

3
2

0.1

VDS=10V

9

ID=6A

8

7

6

5

4
3

2

1
0

0

|yfs |-I

D

°C

Ta=--25

°C

75

0.1 1.0

25°C

23 5723 5723 57

Drain Current, ID–A

SW Time -- I

D

td(off)

t

f

td(on)

23 57 23 57

1.0

Drain Current, ID–A

VGS -- Qg

Total Gate Charge, Qg – nC

P

-- Ta

D

VDS=10V

IT01238

VDD=15V
VGS=10V

IT01240

IT01242

CPH6404

10

10

1412481026

I

-- V

F

°C

Ta=75

SD

25

°C

°C

--25

10

V

= 0

7

GS

5
3

2

1.0
7

–A

5

F

3
2

0.1
7
5

3
2

0.01

Forward Current, I

7
5

3
2

0.001
0 0.40.30.20.1 0.5 0.6 0.7 0.8 0.9 1.0

Diode Forward Voltage, VSD–V

10000

1000

Ciss, Coss, Crss – pF

100

Ciss, Coss, Crss -- V

7
5

3
2

7
5

3
2

7
5

3
2

10

0

510

Ciss

Coss

Crss

DS

Drain-to-Source Voltage, VDS–V

100

7
5

I

=24A

3

DP

2

I

=6A

10

D

7
5

–A

3

D

2

,I

1.0
7
5

Operation in

3
2

Drain Current

0.01

this area is
limited by RDS(on).

0.1
7
5

Ta=25°C

3

Single Pulse

2

Mounted on a ceramic board (900mm2×0.8mm)

0.01

A S O

<10µs

100

1ms

10ms

100ms

DC operation

1.00.1 10 100

Drain-to-Source Voltage, VDS–V

IT01239

f=1MHz

IT01241

µ

s

23 5723 5723 572357

IT01243

3015 20 25

–W

1.6

D

1.5

1.0

0.5

Allowable Power Dissipation, P

0020 40

M

ounted on a ceramic board (900mm

2

×0.8mm

60

80 100 120

Ambient Temperature, Ta – ˚C

)

140 160

IT01244

No.6338-3/4

CPH6404

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6338-4/4