Datasheet CPH6351 Datasheet (SANYO)

Page 1
Ordering number : ENN6936
Preliminary
CPH6351
P-Channel Silicon MOSFET
CPH6351
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Package Dimensions
unit : mm
2151A
[CPH6351]
2.9
5
6
4
2.8
1.6 0.60.6
0.15
0.2
0.05
1 : Drain
1
23
0.95
2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain
SANYO : CPH6
Specifications
0.4
0.7 0.2
0.9
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW≤10µs, duty cycle≤1% --12 A Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W
--20 V
±10 V
--3 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=--1.5A, VGS=--4V 90 120 m RDS(on)2 ID=--0.5A, VGS=--2.5V 140 200 m
=--1mA, VGS=0 --20 V VDS=--20V, VGS=0 --10 µA VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--1.5A 3.3 4.8 S
Marking : JE Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42501 TS IM TA-2650
No.6936-1/4
Page 2
CPH6351
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 400 pF Output Capacitance Coss VDS=--10V, f=1MHz 200 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 100 pF Turn-ON Delay Time td(on) See specified Test Circuit 15 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 15 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 3 nC Diode Forward Voltage V
SD
See specified Test Circuit 65 ns
r
See specified Test Circuit 70 ns
f
IS=--3A, VGS=0 --0.85 --1.5 V
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs D.C.≤1%
V
IN
G
D
ID= --1.5A
RL=6.6
V
OUT
Ratings
min typ max
Unit
P.G
--3.0
--2.5
--6.0V
--8.0V
--2.0
-- A D
--10.0V
--1.5
--1.0
--4.0V
50
I
--3.0V
--2.5V
D
-- V
S
DS
--2.0V
CPH6351
Drain Current, I
--0.5
0
0 --0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source V oltage, VDS -- V
200
180
160
140
(on) -- m
DS
120
ID= --0.5A
100
80
60
40
Static Drain-to-Source
On-State Resistance, R
20
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
RDS(on) -- V
--1.5A
GS
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
VGS= --1.5V
IT03108
Ta=25°C
IT03110
I
-- V
D
-- A D
--6
VDS= --10V
--5
--4
--3
--2
Drain Current, I
--1
25°C
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
Ta=7
°C
5
--25
GS
°C
Gate-to-Source V oltage, VGS -- V
RDS(on) -- Ta
200
180
160
140
(on) -- m
DS
120
100
80
60
40
Static Drain-to-Source
On-State Resistance, R
20
0
--60
--20--40 402008060 140120100 160
RDS(on) -- Ta
GS
= --0.5A, V
I
D
= --1.5A, V
I
D
= --2.5V
= --4.0V
GS
°C
--25
Ta=
25°C
°C
75
IT03109
IT03111
No.6936-2/4
Page 3
CPH6351
1.0
2
10
7 5
3 2
yfs -- I
Ta= --25
75°C
7 5
3 2
D
°C
25°C
Forward Transfer Admittance, yfs -- S
0.1 2 3 57 2 3 57 2 3 57
--0 .1--0.01 --1.0
Drain Current, ID -- A
SW Time -- I
t
(off)
d
t
f
t
r
(on)
t
d
23 57 23 5
Drain Current, I
--1 .0
D
-- A
VGS -- Qg
100
Switching Time, SW Time -- ns
--1 0
2
7
5
3
2
10
--0 .1
VDS= --10V ID= --3A
--8
-- V GS
--6
--4
--2
Gate-to-Source V oltage, V
0
024681012 1614
Total Gate Charge, Qg -- nC
P
-- Ta
2.0
D
D
VDS= --10V
IT03112
VDD= --10V VGS= --4V
IT03114
IT03116
--1 0
I
-- V
F
25°C
SD
--25°C
--1 0 7 5
3 2
--1 .0 7 5
-- A F
3 2
--0 .1 7 5
3 2
--0.01
Forward Current, I
7 5
3 2
--0.001 0 --0.4--0.2 --0.6 --0.8 --1.2--1 .0
Ta=75°C
Diode Forward V oltage, VSD -- V
2
1000
7 5
3
2
Ciss, Coss, Crss -- pF
100
7 5
0--4--2 --10 --12--6 --8 --1 4
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
Drain-to-Source V oltage, V
2
I
= --12A
DP
--1 0 7 5
I
= --3A
D
3 2
-- A
--1 .0
D
7 5
3 2
--0 .1
Drain Current, I
7 5
Ta=25°C
3 2
Single pulse Mounted on a ceramic board(900mm2✕0.8mm)
--0.01
--0.01
Operation in this area is limited by RDS(on).
--0 .1
A S O
--1 .0
Drain-to-Source V oltage, V
DS
-- V
DS
10ms
100ms
DC operation
23 5723 5723 57 23
-- V
DS
VGS=0
IT03113
f=1MHz
IT03115
100µs
1ms
--1 0
IT03117
-- W
1.6
D
1.5
1.0
0.5
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board(900mm
2
0.8mm)
60
80 100 120
Ambient Temperature, Ta -- °C
140 160
IT03118
No.6936-3/4
Page 4
CPH6351
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2001. Specifications and information herein are subject to change without notice.
No.6936-4/4
PS
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