Datasheet CPH6302 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel MOS Silicon FET

Ultrahigh-Speed Switching Applications

Ordering number:EN5939

CPH6302

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.15

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : JB

D

D

R
R

Package Dimensions

unit:mm

2151

[CPH6302]

2.9

4

5

6

0 to 0.1

2.8

1.6 0.60.6

1

23

0.95

0.9

0.7 0.2

0.4

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %121–A

PD

Mounted on a ceramic board (900mm2×0.8mm)

nimpytxam

SSD
SSG

)no(SD
)no(SD

I

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG
SD

SD
SD
SD

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–5.2–V

D

A5.1–=0.20.3S

D

V,A5.1–=
V,A5.0–=

V01–=011541mΩ

SG

V4–=091072mΩ

SG

zHM1=f,V01–=003Fp
zHM1=f,V01–=071Fp
zHM1=f,V01–=57Fp

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain

SANYO : CPH6

sgnitaR

Continued on next page.

0.2

03–V
02±V
3–A

6.1W

˚C
˚C

tinU

40999TS (KOTO) TA-1602 No.5939-1/4

CPH6302

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A3–=

DS

S

0=58.0–5.1–V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS9sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS83sn
tiucriCtseTdeificepseeS23sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

sgnitaR

nimpytxam

A3–=21Cn

D

A3–=1Cn

D

A3–=6.2Cn

D

tinU

-3.5

-3.0

-2.5

–A

D

-2.0

-1.5

-1.0

Drain Current, I

-0.5

0V

–10V

P.G

V

IN

PW=10µs
D.C.≤1%

V

IN

–10V

G

50Ω

ID-

–8.0V

VDD=–15V

D

S

V

DS

–6.0V

ID=–1.5A
RL=10Ω

V

CPH6302

–4.0V

OUT

V

–3.5V

GS

–3.0V

=–2.5V

-6

-5

-4

–A

D

-3

-2

Drain Current, I

-1

VDS=–10V

ID-

V

GS

Ta=–25°C

25°C

75°C

10

fs|–S

y

1.0

Forward Transfer Admittance, |

0.1

0

-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

D

VDS=–10V

7
5

3
2

7
5

3
2

23 57 23 57 23 57

-0.01

-0.1 -1.0 -10

Ta=–25°C

75°C

Drain Current, ID–A

25°C

0

0 -0.5 -1.5 -2.5 -3.5-1.0 -2.0 -3.0 -4.5-4.0

Gate-to-Source Voltage, VGS–V

R

500

400

–mΩ

DS(on)

-

V

ID=–1.5A

300

DS(on)

200

I

=–0.5A

D

100

Static Drain-to-Source

On-State Resistance, R

0

-2 -4 -6 -8 -10 -12 -14 -16 -18 -20

0

Gate-to-Source Voltage, VGS–V

GS

Ta=25°C

No.5939-2/4

R

500

400

–mΩ

300

DS(on)

200

100

Static Drain-to-Source

On-State Resistance, R

0

-60 -40 -20 0 20 40 60 80 100 120 140

DS

I

I

D

D

(on)

=–0.5A,V

=–1.5A,V

-

GS

GS

Ta

=–4V

=–10V

Ambient Temperature, Ta – ˚C

10000

7
5

3
2

1000

7
5

3
2

100

Ciss,Coss,Crss – pF

7
5

3
2

10

0 -10 -20-5 -15 -25 -30

Ciss,Coss,Crss-V

DS

Drain-to-Source Voltage, VDS–V

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0
57 23 57 23 57

-0.1 -1.0 -10

SW Time

t

f

t

d(off)

t

r

-

I

D

t

d(on)

Drain Current, ID–A

1.8

1.6

–W

1.4

D

1.2

1.0

0.8

PD-

Mounted on a ceramic board (900mm

Ta

CPH6302

f=1MHz

Ciss

Coss

Crss

VDD=–15V

=–10V

V

GS

-10

VGS=0

7
5

3
2

-1.0
7

–A

5

F

3
2

-0.1
7
5

3
2

Forward Current, I

-0.01
7
5

3
2

-0.001
0

-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

IF-

V

Ta=75°C

SD

25°C

Diode Forward Voltage, VSD–V

-10

V

–

GS

Gate-to-Source Voltage, V

VDS=–10V

=–3A

I

-9

D

-8

-7

-6

-5

-4

-3

-2

-1
0

VGS-

-2 -4 -6 -8 -10 -120

Qg

Total Gate Charge, Qg – nC

3
2

IDP=–12A

-10
7
5

3

–A

2

D

-1.0

,I

7
5

3
2

-0.1

Drain Current

7
5

3
2

-0.01

-0.01

Operation in this area
is limited by R

Ta=25°C
1 Pulse

Mounted on a ceramic board (900mm2×0.8mm)

23 57 23 5 5723 2357

-0.1 -1.0 -10

A S O

ID=–3A

(on).

DS

DC operation

Drain-to-Source Voltage, VDS–V

–25°C

100µs

1ms

10ms

100ms

0.6

0.4

0.2

Allowable Power Dissipation, P

0

020

2

×0.8mm)

40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

No.5939-3/4

CPH6302

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of April, 1999. Specifications and information herein are subject to
change without notice.

PS No.5939-4/4