Datasheet CPH5801 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

DC/DC Converter Applications

Ordering number:EN6427

CPH5801

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage.

· Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

]TEFSOM[

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 521+ot55–

]DBS[

egatloVesreveRkaePevititepeRV

egatloVegruSesreveRkaePevititeper-noNV

tnerruCtuptuOegarevAI

tnerruCegruSI

erutarepmeTnoitcnuJjT 521+ot55–

erutarepmeTegarotSgtsT 521+ot55–

SSD SSG

D

PD

Mounted on a ceramic board (600mm2×0.8mm) 1unit

D

MRR MSR

O

MSF

Package Dimensions

unit:mm

2171

2.9

12

WP ≤ elcycytud,sµ01 ≤ %16.5A

elcyc1,evaweniszH05 01A

[CPH5801]

345

0.40.95

0.4

0.15

2.8

1.6 0.60.6

0.2

0.9

0.7

0.2

0.05

1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5

02V 01±V

4.1A

9.0W

˚C ˚C

03V 03V 1A

˚C ˚C

30300TS (KOTO) TA-2491 No.6427–1/5

CPH5801

Electrical Characteristics at Ta = 25˚C

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]TEFSOM[

egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

]DBS[

egatloVesreveRV egatloVdrawroF

tnerruCesreveRI

ecnaticapaClanimretretnICV

emiTyrevoceResreveRt

ecnatsiseRlamrehTa-jhtR 011

Marking : QA

I

SSD)RB(

V

SSD

V

SSG

)ffo(VSDI,V01=

SG

1)no(IDV,Am007=

SD

2)no(IDV,Am004=

SD

)no(d

r

)ffo(d

f

I

DS

IRAm1=03V

R

VF1IFA5.0=53.04.0V VF2IFA2=24.074.0V

VRV51= 005Aµ

R

IFI=

rr

V,Am1=

D

SD SG

SD SD SD

S

R

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=4.03.1V

D

Am007=8.15.2S

D

V4=002062mΩ

SG

V5.2=062063mΩ

SG

zHM1=f,V01=09Fp zHM1=f,V01=06Fp zHM1=f,V01=82Fp

tiucriCtseTdeificepseeS01sn tiucriCtseTdeificepseeS02sn tiucriCtseTdeificepseeS02sn tiucriCtseTdeificepseeS02sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A4.1=

SG

D

0=9.02.1V

elcyczHM1=f,V01=53Fp

sgnitaR

nimpytxam

A4.1=6Cn A4.1=1Cn A4.1=2Cn

.tiucriCtseTdeificepseeS,Am001= 51sn

tinU

˚C/WMounted on a ceramic board (600mm2×0.8mm)

Electrical Connection (Top view)

ASG

CD

Switching Time Test Circuit Reverse Recovery Time Test Circuit

[MOSFET block] [SBD block]

VDD=10V

V

4V 0V

PW=10µs D.C.≤1%

P.G

IN

V

IN

G

50Ω

ID=700mA

RL=14.3Ω

D

CPH5801

S

V

OUT

Duty≤10%

10µs

100mA100mA

50Ω 100Ω 10Ω

--5V

10mA

trr

No.6427–2/5

2.0

1.8

1.6

1.4

–A

D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2

0

500

450

400

–mΩ

350

(on)

300

DS

250

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

8.0V

6.0V

10.0V

0

0.2

Drain-to-Source Voltage, VDS–V

ID=400mA

01 23456

I

4.0V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

RDS(on) -- V

700mA

Gate-to-Source Voltage, V

10

7 5

fs|–S

y

3 2

1.0 7 5

3 2

Forward Transfer Admittance, |

0.1

23 57

0.01

yfs -- I

Ta=--25

75°C

0.1

Drain Current, I

1000

100

Switching Time, SW Time – ns

1.0

7 5

3 2

7 5

3 2

10

7 5

3 2

0.1

23 57

SW Time -- I

td(off)

Drain Current, ID–A

D

-- V

DS

[MOSFET]

3.0V

2.5V

2.0V

VGS=1.5V

GS

[MOSFET]

Ta=25°C

78910

–V

GS

D

[MOSFET]

VDS=10V

1.0

–A

D

°C

25

[MOSFET]

°C

23 57 23 57

D

VDD=10V VGS=4V

t

r

t

f

td(on)

1.0

23 57

CPH5801

IT01074

IT01076

10

IT01078

10

IT01080

I

-- V

4.0

VDS=10V

3.5

3.0

–A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

450

400

350

–mΩ

300

(on) DS

250

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60

10

7 5

3 2

1.0 7

–A

5

F

3 2

0.1 7 5

3 2

0.01

Forward Current, I

7 5

3 2

0.001 0 0.3 0.6 0.9 1.2 1.5

Gate-to-Source Voltage, VGS–V

--40 --20 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

D

RDS(on) -- Ta

=400mA, V

I

D

=700mA, V

I

D

I

Ta=75°C

25°C

F

-- V

--25°C

GS

SD

Ta=--25

=2.5V

=4.0V

GS

°C

75°C

Diode Forward Voltage, VSD–V

1000

7 5

3 2

100

7 5

Ciss, Coss, Crss – pF

3 2

0102

Ciss, Coss, Crss -- V

Ciss Coss

Crss

46

Drain-to-Source Voltage, VDS–V

82010 12 14 16 18

[MOSFET]

°C

25

[MOSFET]

V

DS

f=1MHz

No.6427–3/5

IT01075

IT01077

= 0

GS

IT01079

[MOSFET]

IT01081

CPH5801

VGS -- Qg

V

Gate-to-Source Voltage, V

–

GS

10

9

8

7

6

5

4 3

2

1 0

VDS=10V ID=1.4A

0

Total Gate Charge, Qg – nC

P

1.2

1.0

–W

D

0.9

0.8

0.6

0.4

0.2

Mounted on a ceramic board (600mm

D

Allowable Power Dissipation, P

0020 40

100

7 5

3 2

10

7

–mA

5 3

R

2

1.0 7 5

3 2

0.1

Reverse Current, I

7 5

3 2

0.01 0

1000

7 5

3 2

100

7 5

3 2

10

7 5

3

Interterminal Capacitance, C – pF

2

1.0

1.0 10

23 57 23 5

60

Ambient Temperature, Ta – ˚C

I

R

°C

Ta=125

100°C

75

Reverse Voltage, VR–V

C -- V

Reverse Voltage, VR–V

-- Ta

80 100 120

-- V

R

°C

50°C

25°C

R

[MOSFET]

IT01082

[MOSFET]

2

×0.8mm) 1unit

140 160

IT01084

IT00628

f=1MHz

IT00630

10

I

=5.6A

7

DP

5 3

2

I

=1.4A

D

–A

1.0

D

7

,I

5 3

Operation in

2

this area is limited by RDS(on).

0.1

Drain Current

7 5

Ta=25°C

3

Single pulse

2

1unit Mounted on a ceramic board (600mm2×0.8mm)

645123

0.01

1.0

–A

F

0.1

Forward Current, I

0.01

23 57 23 57 23 5

0.1

7 5

3 2

7 5

3 2

0 0.3 0.4 0.50.1 0.2

Drain-to-Source Voltage, VDS–V

100°C

A S O

100ms

DC operation

1.0 10

I

-- V

F

°C

Ta=125

25°C

50°C

75°C

Forward Voltage, VF–V

1.0

-- W

⁄Rectangular wave θ=60°

0.9

¤Rectangular wave θ=120°

(AV)

‹Rectangular wave θ=180°

F

0.8

›Sine wave θ=180°

0.7

0.6

0.5

0.4

0.3

0.2

0.1 0

Average Forward Power Dissipation, P

0

3015 2552010

0.2 0.4 0.6 0.8

PF(AV) -- I

⁄

O

¤

Rectangular wave

Sine wave

Average Forward Current, I

I

-- t

12

10

S

Current waveform : 50Hz sine wave

Is

[MOSFET]

100µs

1ms

10ms

‹

›

θ

360°

180°

360°

1.0 1.2 1.4

-- A

O

IT01083

[SBD]

IT00627

[SBD][SBD]

IT00629

[SBD][SBD]

20ms

8

(Peak) – A

S

6

4

2

t

Surge Forward Current, I

0

7

27

0.01

52 23337

0.1

Time, t – s

5

1.0

IT00631

No.6427–4/5

CPH5801

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.

PS No.6427–5/5