Datasheet CPH5704 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
TR : NPN Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
DC/DC Converter Applications
Ordering number:ENN6320
CPH5704
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2.9
Features
· Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
· Each device incorporated in the CPH5704 is equiva­lent to the CPH3206 and to the SBS004, respec­tively.
· Ultrasmall package facilitates miniaturization in end products.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 521+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCtuptuOegarevAI
tnerruCegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
OBC OEC OBE
C
PC
B
Mounted on a ceramic board (600mm2×0.8mm)
C
MRR MSR
O
MSF
Package Dimensions
unit:mm
2156
[CPH5704]
345
1.6 0.60.6
12
0.40.95
0.2
0.7
0.4
elcyc1,evaweniszH05 01A
0.15
2.8
0.9
0.2
0.05
1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5
51V 51V 5V 3A 5A 006Am
9.0W
˚C ˚C
51V 51V 1A
˚C ˚C
70500TS (KOTO) TA-2784 No.6320–1/5
Page 2
CPH5704
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloC
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
]DBS[
egatloVesreveRV
egatloVdrawroF
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 011
h
V
VF1IFA5.0=03.053.0V VF2IFA1=53.004.0V
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
IRAm1=51V
R
VRV6= 005Aµ
R
R
IFI=
rr
I,V21=
BC BE EC EC BC
R
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V2=
A5.0=
C
I,V2=
A5.0=
C
zHM1=f,V01=
I,A5.1=
Am03=
B
I,A5.1=
Am03=58.02.1V
B I,Aµ01=
0=51V
E
R,Am1=
= 51V
EB
I,Aµ01=
0=5V
C
zHM1=f,V01=24Fp
sgnitaR
nimpytxam
002065
083zHM 32Fp 001051Vm
.tiucriCtseTdeificepseeS03sn .tiucriCtseTdeificepseeS012sn .tiucriCtseTdeificepseeS11sn
.tiucriCtseTdeificepseeS,Am001= 51sn
tinU
˚C/WMounted on a ceramic board (600mm2×0.8mm)
Electrical Connection
AEB
CC
(Top view)
Switching Time Test Circuit
[TR] [SBD]
I
V
R
VBE=–5V
I
B1 B2
1k
+
220µF 470µF
+
VCC=5V
OUTPUT
R
L
PW=20µs D.C.1%
INPUT
50
20IB1= –20IB2= IC=1.5A
Duty10%
10µs
50
–5V
100
10
100mA100mA
10mA
t
rr
No.6320–2/5
Page 3
I
-- V
5.0
4.5
4.0
3.5
–A
C
3.0
2.5
2.0
1.5
Collector Current, I
1.0
0.5 0
0 0.2 0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Collector-to-Emitter Voltage, VCE– V Collector-to-Emitter Voltage, VCE–V
3.0
VCE=2V
2.5
–A
2.0
C
C
60mA
I
40mA
C
-- V
CE
IB=0
BE
1mA
CPH5704
[TR] [TR]
25mA
20mA
15mA
10mA
5mA
2mA
IT00842
[TR] [TR]
5.0
4.5
40mA
4.0
3.5
–A
C
3.0
2.5
2.0
1.5
Collector Current, I
1.0
0.5 0
0 1.0 2.0 3.0 4.0 5.00.5 1.5 2.5 3.5 4.5
1000
FE
7 5
3 2
Ta=75°C
--25°C
I
h
C
-- V
FE
IB=0
-- I
CE
25mA
1mA
C
VCE=2V
25°C
20mA
15mA
10mA
5mA
2mA
IT00843
1.5
1.0
Collector Current, I
0.5
0
0 0.2 0.4 0.6 0.8 1.0
1000
7 5
3
– MHz
T
2
100
7 5
3 2
Base-to-Emitter Voltage, VBE–V
f
-- I
T
°C
Ta=75
C
Gain-Bandwidth Product, f
10
23 57
0.01 0.1
1000
7 5
3 2
Collector Current, IC–A
23 57 23 5
VCE(sat) -- I
C
(sat) – mV
100
CE
7 5
3 2
10
7
Collector-to-Emitter
Saturation Voltage, V
5 3
23 57 23 57 23 5
0.01
Ta=75
0.1 1.0
Collector Current, IC–A
25°C
°C
--25°C
25
°C
1.0
100
7 5
DC Current Gain, h
°C
--25
IT00844
[TR] [TR]
VCE=2V
3 2
10
23 57
0.01 0.1
100
7
5
3
2
Collector Current, IC–A
23 57 23 5
Cob -- V
CB
Output Capacitance, Cob – pF
10
IT00846
[TR] [TR]
IC / IB=20
IT00848
1.0
1000
7 5
3 2
(sat) – mV
100
CE
7 5
3 2
10
7
Collector-to-Emitter
Saturation Voltage, V
5 3
0.01 0.1 1.0
23 57 23
Collector-to-Base Voltage, VCB–V
VCE(sat) -- I
C
°C
Ta=75
--25°C
23 57 23 57 23 5
Collector Current, IC–A
10
25
1.0
IT00845
f=1MHz
IT00847
IC / IB=50
°C
IT00849
No.6320–3/5
Page 4
CPH5704
10
7 5
3
(sat) – V
2
BE
1.0
Ta= --25°C
7 5
3
Base-to-Emitter
Saturation Voltage, V
2
0.1 23 57 23 57 23 5
0.01 0.1 1.0
1.0
0.9
0.8
–W
0.7
C
0.6
0.5
0.4
0.3
0.2
Collector Dissipation, P
0.1
0
0 20 40 60 80 100 120 140 160
VBE(sat) -- I
75°C
Collector Current, IC–A
P
C
Mounted on a ceramic board (600mm
C
-- Ta
Ambient Temperature,Ta – °C
I
-- V
R
100
7 5
3 2
10
7
–mA
5 3
R
2
1.0
7 5
3 2
0.1
Reverse Current, I
7 5
3 2
0.01 0 5 10 15
Ta=125°C
100°C
75
50°C
25°C
°C
R
Reverse Voltage, VR–V Average Forward Current, I
IC / IB=50
25°C
2
×0.8mm)
[TR] [TR]
IT00850
[TR]
IT00852
[SBD]
IT00854
10
7
ICP=5A
5
IC=3A
3 2
–A
C
1.0 7
5 3
2
0.1
Collector Current, I
7
Ta=25°C
5
Single pulse
3
Mounted on a ceramic board (600mm
2
2 3 57 2 3 57 2
Collector-to-Emitter Voltage, VCE–V
10
7 5
3 2
–A
1.0
F
7 5
3 2
0.1 7
Forward Current, I
5 3
75°C
2
0.01 0 0.20.1 0.40.3 0.5
Ta=125°C
100°C
50°C
Forward Voltage, VF–V
0.8
Rectangular wave θ=60°
-- W
¤Rectangular wave θ=120°
0.7
Rectangular wave θ=180°
(AV)
F
0.6
Sine wave θ=180°
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 1.00.6 1.20.8 1.4
Average Forward Power Dissipation, P
A S O
500
1ms
10ms
100m
DC operation
1.0 10
I
F
25°C
PF(AV) -- I
-- V
F
⁄
Rectangular wave
O
¤
s
2
×0.8mm)
Sine wave
O
›
-- A
‹
180°
µs
IT00851
[SBD]
IT00853
[SBD]
θ
360°
360°
IT00855
No.6320–4/5
Page 5
CPH5704
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice.
PS No.6320–5/5
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