Datasheet CPH5604 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6440
CPH5604
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : FD
SSD SSG
D
PD
D
SSD SSG
R
)no(SD
R
)no(SD
Package Dimensions
unit:mm
2168
[CPH5604]
2.9
345
1.6 0.60.6
12
WP elcycytud,sµ01 %16.5A
Mounted on a ceramic board (600mm2×0.8mm) 1unit
I
V,Am1=
SSD)RB(
D
V V V
)ffo(SG
1I
D
2I
D
SD SG SD
SD SD SD
0=03V
SG
V,V03=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01=
Am1=14.2V
D
Am007=2.17.1S
D V,Am007=
V01=032003m
SG
V,Am004=
V4=053094m
SG
zHM1=f,V01=09Fp zHM1=f,V01=05Fp zHM1=f,V01=22Fp
0.40.95
0.2
0.7
0.4
2.8
0.9
nimpytxam
0.15
0.2
0.05
1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5
03V 02±V
4.1A
9.0W
sgnitaR
Continued on next page.
˚C ˚C
tinU
30300TS (KOTO) TA-2666 No.6440-1/4
Page 2
CPH5604
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG SG
I
DS
S
SG
V,A4.1=
0=29.02.1V
SG
tiucriCtseTdeificepseeS7sn tiucriCtseTdeificepseeS8sn tiucriCtseTdeificepseeS81sn tiucriCtseTdeificepseeS8sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A4.1=5Cn A4.1=1Cn A4.1=1Cn
tinU
Electrical Connection
G1
2.0
1.8
1.6
1.4
–A
1.2
D
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0
800
700
–m
600
500
DS(on)
400
ID=400mA
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
04812
S
(Top view)
=10.0V
GS
V
0.2
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
700mA
Gate-to-Source Voltage, V
G2
D2D1
I
-- V
D
DS
6.0V
4.0V
8.0V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
GS
–V
GS
3.5V
2.5V
Ta=25°C
16 202 6 10 14 18
3.0V
IT01096
IT01098
Switching Time Test Circuit
V
IN
10V
0V
V
IN
PW=10µs D.C.1%
P.G
4.0
VDS=10V
3.5
3.0
–A
2.5
D
2.0
1.5
Drain Current, I
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.54.0 4.5 5.0
600
500
–m
400
DS(on)
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
G
50
Gate-to-Source Voltage, VGS–V
RDS(on) -- Ta
I
D
I
Ambient Temperature, Ta – °C
VDD=15V
ID=700mA
RL=21.4
D
S
I
-- V
D
=400mA, V
=700mA, V
D
GS
GS
V
OUT
CPH5604
°C
Ta=--25
=4V
=10V
GS
25°C
75°C
IT01097
IT01099
No.6440-2/4
Page 3
fs|–S
y
Forward Transfer Admittance, |
100
1.0
0.1
10
7 5
3 2
7 5
3 2
0.01
7 5
3 2
23 57
VDD=15V VGS=10V
yfs -- I
Ta=--25
75
23 57 23 57
0.1
D
C
°
C
°
25
1.0
Drain Current, ID–A
SW Time -- I
D
td(off)
t
r
C
°
VDS=10V
IT01100
CPH5604
10
I
-- V
F
10
7 5
3 2
–A
1.0
F
7 5
3 2
0.1 7
Forward Current, I
5 3
2
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta=75
SD
°C
25°C
--25°C
Diode Forward Voltage, VSD–V
1000
Ciss, Coss, Crss -- V
7 5
3 2
DS
V
GS
IT01101
f=1MHz
= 0
10
7 5
3
Switching Time, SW Time – ns
2
1.0
0.1
10
VDS=10V
9
ID=1.4A
V
8
7
GS
6
5
4 3
2
Gate-to-Source Voltage, V
1 0
0
1.2
t
f
td(on)
23 57 23 57
Drain Current, ID–A
1.0
IT01102
VGS -- Qg
Total Gate Charge, Qg – nC
P
-- Ta
D
IT01104
10
5.03.0 4.01.0 2.0 4.52.5 3.50.5 1.5
100
7 5
Ciss, Coss, Crss – pF
3 2
10
0
5
10
Drain-to-Source Voltage, VDS–V
10
I
=5.6A
7
DP
5 3
2
I
=1.4A
D
1.0
–A
7
D
,I
5 3
2
Operation in
0.1
Drain Current
0.01
this area is limited by RDS(on).
7 5
Ta=25
°C
3
Single pulse
2
1 unit
Mounted on a ceramic board (600mm
23 57 23 57 23 57
0.1
1.0 10 100
Drain-to-Source Voltage, VDS–V
A S O
100ms
DC operation
Ciss
Coss
Crss
10ms
2
×0.8mm)
3015 20 25
IT01103
100µs
1ms
IT01105
1.0
–W
D
0.9
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board (600mm
2
×0.8mm) 1 unit
60
80 100 120
Ambient Temperature, Ta – °C
140 160
IT01106
No.6440-3/4
Page 4
CPH5604
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6440-4/4
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