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MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CES
60 V
Emitter-Base Voltage V
EBO
10
V
Collector Current I
C
500
mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
VCE=50V 500 nA
I
CBO
VCB=50V 100 nA
I
EBO
VBE=10V 100 nA
BV
CES
IC=100µA 60 V
BV
CBO
IC=100µA 60 V
V
CE(SAT)
IC=100mA, IB=0.1mA 1.5 V
V
BE(ON)
VCE=5.0V, IC=100mA 2.0 V
h
FE
VCE=5.0V, IC=10mA 10,000
h
FE
VCE=5.0V, IC=100mA 10,000
f
T
VCE=5.0V, IC=10mA, f=100MHz 125 MHz
CMPTA27
NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 ( 07-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA27 type
is a Silicon NPN Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
Marking Code is FG.
Page 2
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPTA27
NPN
SILICON DARLINGTON TRANSISTOR
R4 ( 07-December 2001)
MARKING CODE: FG
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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