AlGaAs / InGaAs HEMT CFY 77
________________________________________________________________________________________________________
D a t a s h e e t
Features
*Very low noise
*Very high gain
*For low noise front end amplifiers up to 20 GHz
*For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
Package 1)
CFY77-08 HG Q62702-F1549 MW-4
CFY77-10 HH Q62702-F1559 MW-4
Maximum ratings Symbol Unit
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (T
S
< 51°C)
2)
V
V
V
T
T
P
DS
DG
GS
I
D
Ch
stg
tot
3.5 V
4.5 V
-3.0 V
60 mA
150 °C
-65...+150 °C
180 mW
Thermal resistance
Channel-soldering point source
1) Dimensions see chapter Package Outlines
2) TS: Temperature measured at soldering point
Siemens Aktiengesellschaft pg. 1/4 11.01.1996
R
thChS
550 K/W
HL EH PD 21
AlGaAs / InGaAs HEMT CFY 77
________________________________________________________________________________________________________
Electrical characteristics at
T
= 25°C
A
unless otherwise specified
Characteristics Symbol min typ max Unit
Drain-source saturation current
VDS = 2 V VGS = 0 V
Pinch-off voltage
VDS = 2 V ID = 1 mA
Gate leakage current
VDS = 2 V ID = 15 mA
Transconductance
VDS = 2 V ID = 15 mA
Noise figure
VDS = 2 V ID = 15 mA f = 12 GHz
I
DSS
V
GS(P)
I
g
F
G
m
15 30 60 mA
-2 -0.7 -0.2 V
- 0.05 2 µA
50 65 - mS
dB
CFY77-08
CFY77-10
Associated gain
VDS = 2 V ID = 15 mA f = 12 GHz
CFY77-08
CFY77-10
G
-
-
a
10
9.5
0.7
0.9
10.5
10
0.8
1
dB
-
-
Siemens Aktiengesellschaft pg. 2/4 11.01.1996
HL EH PD 21
AlGaAs / InGaAs HEMT CFY 77
________________________________________________________________________________________________________
P
tot
200
180
[ mW ]
160
140
120
100
80
60
Total Power Dissipation P
Package mounted on alumina
T
T
S
A
= f (TS;TA)
tot
40
20
0
0 50 100 150
TT; [ °C ]
AS
Typical Common Source Noise Parameters
ID = 15 mA UDS = 2.0 V Z0 = 50 Ω
fF
min
GHz dB dB MAG ANG
2 0.36 19.4 0.79 27 13.7 0.274 0.03 1.2
4 0.44 15.9 0.72 60 10.1 0.202 0.04 1.1
6 0.51 13.9 0.63 92 5.85 0.117 0.05 1.05
8 0.58 12.4 0.56 134 2.35 0.047 0.06 1.0
10 0.65 11.2 0.52 180 1.1 0.022 0.07 1.0
12 0.72 10.4 0.54 -135 2.9 0.058 0.08 1.1
14 0.80 9.7 0.59 -108 7.15 0.143 0.10 1.5
G
a
Γ
opt
R
n
r
n
NF
Ω
50Ω
dB
Siemens Aktiengesellschaft pg. 3/4 11.01.1996
HL EH PD 21
AlGaAs / InGaAs HEMT CFY 77
________________________________________________________________________________________________________
Typical Common Source S-Parameters
ID = 15 mA UD = 2.0 V Z0 = 50 Ω
S11 S21 S12 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
1 0.98 -22.8 5.55 159.6 0.030 87.5 0.633 -16.3
2 0.94 -46.1 5.40 139.3 0.053 57.8 0.60 -32.5
3 0.88 -68.4 5.09 120.1 0.074 44.9 0.54 -48.0
4 0.82 -90.6 4.77 101.2 0.089 30.7 0.48 -63.3
5 0.77 -110.8 4.45 84.0 0.101 18.1 0.42 -77.5
6 0.72 -131.4 4.16 67.3 0.112 7.9 0.35 -92.6
7 0.66 -153.6 3.88 50.2 0.119 -3.3 0.28 -110.8
8 0.63 -175.2 3.58 34.5 0.122 -12.7 0.22 -132.0
9 0.62 164.4 3.29 18.9 0.120 -22.0 0.16 -157.3
10 0.62 145.0 3.01 4.0 0.119 -29.5 0.14 177.3
11 0.64 128.3 2.76 -10.3 0.119 -37.4 0.15 136.2
12 0.64 113.1 2.51 -23.5 0.114 -44.0 0.18 115.4
13 0.66 101.3 2.32 -35.7 0.114 -47.3 0.23 100.9
14 0.67 89.4 2.18 -48.2 0.116 -53.1 0.25 91.0
15 0.69 73.6 2.06 -62.4 0.116 -58.6 0.28 75.4
16 0.73 59.2 1.85 -75.9 0.115 -65.8 0.36 57.1
17 0.76 51.7 1.65 -86.5 0.112 -69.4 0.39 53.1
18 0.78 45.4 1.56 -96.7 0.115 -72.3 0.42 43.8
19 0.77 36.2 1.51 -108.6 0.121 -76.7 0.44 38.8
Siemens Aktiengesellschaft pg. 4/4 11.01.1996
HL EH PD 21
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