Datasheet CF5009AL6 Datasheet (NPC)

Page 1
6 µ
=
=
=
C
C
C
SM5009 series
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5009 series are crystal oscillator module ICs, that incorporate circuits to limit oscillator-stage current, controlling total current consumption. High-frequency capacitors are built-in, eliminating the need for external components to make a stable fundamental-harmonic oscillator.
FEATURES
Capacitors C
Standby function
A typ (V
(SM5009AL × S)
Power-save pull-up resistor built-in (SM5009AL × S)
Inverter amplifier feedback resistor built-in
16 mA (V (SM5009AK × S, AL × S, AN × S, CN × S)
, C
built-in
G
D
5 V) low standby current
DD
4.5 V) drive capability
DD
4 mA (V
4.5 V) drive capability
DD
(SM5009AH × S)
Output three-state function
2.25 to 5.5 V supply voltage (CF5009AL × )
2.7 to 5.5 V supply voltage (SM5009AH × S, AL × S, AN × S, CN × S)
Oscillator frequency output (f f
/16, f
O
8-pin SOP (SM5009 ××× S)
Chip form (CF5009 ××× )
/32 determined by internal connection)
O
, f
/2, f
O
O
O
/4, f
/8,
O
SERIES CONFIGURATION
Version
SM5009AH1S 2.7 to 5.5 f SM5009AH2S 2.7 to 5.5 f SM5009AH3S 2.7 to 5.5 f SM5009AH4S 2.7 to 5.5 f SM5009AK1S 4.5 to 5.5 f SM5009AK2S 4.5 to 5.5 f SM5009AN1S 2.7 to 5.5 f SM5009AN2S 2.7 to 5.5 f SM5009AN3S 2.7 to 5.5 f SM5009AN4S 2.7 to 5.5 f SM5009AN5S 2.7 to 5.5 f
SM5009AN6S 2.7 to 5.5 f SM5009CN1S 2.7 to 5.5 f SM5009CN2S 2.7 to 5.5 f
SM5009AL1S 2.7 to 5.5 f
SM5009AL2S 2.7 to 5.5 f
SM5009AL3S 2.7 to 5.5 f
SM5009AL4S 2.7 to 5.5 f
SM5009AL5S 2.7 to 5.5 f
SM5009AL6S 2.7 to 5.5 f
1. Chip form devices have designation CF5009
2. SM5009AH SM5009AK
3. SM5009AH SM5009CN
4. SM5009AN
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.
voltage
[V]
×
S: V
DD
×
S: Ta = –20 to +85
×
S, AN
×
S: Ta = –10 to +70
×
S, AL
Supply
1, 2
Output
frequency
O
/2 15 16 15 30 6 10 TTL CMOS No
O
/4 15 16 15 30 6 10 TTL CMOS No
O
/8 15 16 15 30 6 10 TTL CMOS No
O
O
/2 15 40 6 10 TTL TTL No
O
O
/2 30 40 50 40 6 10 TTL CMOS No
O
/4 30 40 50 40 6 10 TTL CMOS No
O
/8 30 40 50 40 6 10 TTL CMOS No
O
/16 30 40 50 40 6 10 TTL CMOS No
O
/32 30 40 50 40 6 10 TTL CMOS No
O
O
/2 15 30 50 30 6 10 TTL CMOS No
O
O
/2 30 40 50 40 6 10 CMOS CMOS Yes
O
/4 30 40 50 40 6 10 CMOS CMOS Yes
O
/8 30 40 50 40 6 10 CMOS CMOS Yes
O
/16 30 40 50 40 6 10 CMOS CMOS Yes
O
/32 30 40 50 40 6 10 CMOS CMOS Yes
O
= 4.5 to 5.5V
×
S, AL
×
S: Ta = –20 to +80
°
×
S: Ta = –20 to +80
°
3V operating 5V operating
Output
Recommended
load
(max)
[pF]
15 16 15 30 6 10 TTL CMOS No
30 40 50 40 6 10 TTL CMOS No
15 30 50 30 6 10 TTL CMOS No
30 40 50 40 6 10 CMOS CMOS Yes
°
operating
frequency
3
range
[MHz]
15 40 6 10 TTL TTL No
×××
.
°
C
Output
load
(max)
[pF]
Recommended
operating
frequency
4
range
[MHz]
Built-in
capacitance
C
C
G
[pF]
D
[pF]
Input
level
Output
duty level
Standby function
ORDERING INFORMATION
De vice Pack ag e
SM5009
×××
S 8-pin SOP
CF5009
×××
–1 Chip form
NIPPON PRECISION CIRCUITS—1
Page 2
PACKAGE DIMENSIONS
(Unit:mm)
8-pin SOP
SM5009 series
4.4 0.2
6.2 0.3
0.15
+
0.05
0.1
0.695typ
1.5 0.1
1.27
5.2 0.3
0.4 0.1
0.10
0.05 0.05
M
0.12
0.4 0.2
0 to 10
NIPPON PRECISION CIRCUITS—2
Page 3
SM5009 series
PAD LAYOUT
(Unit: µ m)
VDD
Y
(0,0)
Chip size: 0.92 Chip thickness: 300 ± 30 µm Chip base: V
XT VSS
INH XT
X
×
DD
Q
HA5009
1.22 mm
level
(920,1220)
PINOUT
(Top view)
INH
XT
XT
VSS
1
2
3
4
009
8
7
NC
NC
6
Q
5
VDD
PIN DESCRIPTION and PAD DIMENSIONS
Number Name I/O Description
1INH 2 XT I Amplifier input.
3XTO Amplifier output. 57 5 21 2 4 VS S Ground 766 212
5QO 6 N C No connection
7 N C No connection – 8 VD D S upply voltage 162 1062
Output state control input. High impedance when LOW. In the case of the
I
SM5009AL
Output. Output frequency (f internal connection
×
S, the oscillator stops and Power-saving pull-up resistor built in.
Cr ystal oscillator connection pins. Cr ystal oscillator connected between XT and XT
, f
/2, f
/4, f
/8, f
/16, f
O
O
O
O
/32) determined by
O
O
Pad dimensions [µm]
XY
195 212 385 212
765 1062
BLOCK DIAGRAM
XT
CG CD
XT
INH
VSSVDD
Rf
1/2 1/21/2 1/2 1/2
Q
NIPPON PRECISION CIRCUITS—3
Page 4
SPECIFICATIONS
Absolute Maximum Ratings
V
= 0 V
SS
Parameter Symbol Condition Rating Unit
Supply voltage range V Input voltage range V Output voltage range V Ope rating temperature range T
Storage temperature range T
Output current I Po w er dissipation P
OUT
DD
IN
OUT
opr
stg
D
SM5009 series
0.5 to 7.0 V
0.5 to V
0.5 to V
Chip form 8-pin SOP
8-pin SOP 500 m W
+ 0.5 V
DD
+ 0.5 V
DD
40 to 85
65 to 150
55 to 125
25 mA
°
°
C
C
Recommended Operating Conditions
V
= 0 V
SS
Parameter Symbol Series Condition
f
30MHz 4.5 5.5
f
16MHz 2.7 3.3
40MHz 4.5 5.5 V
40MHz 2.7 5.5 V
30MHz 2.7 5.5 V
Chip form
8-pin SOP
f
30MHz, 4.5V
16MHz, 2.7V ≤ VDD ≤ 3.6V
f
30MHz
f 30MHz < f ≤ 40MHz
Chip form
8-pin SOP
f
30MHz, 2.7V ≤ VDD < 4.5V
f
30MHz, 4.5V ≤ VDD ≤ 5.5V
Chip form
8-pin SOP
Supply voltage V
Input voltage V
Ope rating temperature T
AH series
AK series f AN series f
CN series f
DD
AL series
All series V
IN
AH series
AK series
AN series
OPR
CN series
AL series
Rating
min typ max
f
40MHz 2.7 5.5
f
30MHz 2.3 2.7
f
20MHz 2.25 2.75
f
40MHz 2.7 5.5
f
14.4MHz 2.4 2.7 –V
V
5.5V
DD
f ≤ 40MHz, 2.7V ≤ VDD < 4.5V
40MHz, 4.5V ≤ VDD ≤ 5.5V
f f
40MHz, 2.7V ≤ VDD < 4.5V
f ≤ 40MHz, 4.5V ≤ VDD ≤ 5.5V
30MHz, 4.5V ≤ VDD ≤ 5.5V
f
40MHz, 2.7V ≤ VDD ≤ 5.5V
f f ≤ 30MHz, 2.3V ≤ VDD ≤ 2.7V
SS
40
20
40
20
20
40
20
20
40
10
40
40
20
f ≤ 20MHz, 2.25V ≤ VDD ≤ 2.75V− 20
40MHz, 2.7V ≤ VDD ≤ 5.5V
f f
30MHz, 2.7V ≤ VDD ≤ 5.5V
20
40
f ≤ 14.4MHz, 2.4V ≤ VDD ≤ 2.7V− 20
Unit
V
V
DD
+
85
+
80
+
85
+
80
+
80
+
85
+
80
+
80
+
85
+
70
+
85
+
85
+
80
+
80
+
80
+
85
+
80
V
°
C
°
C
°
C
°
C
°
C
NIPPON PRECISION CIRCUITS—4
Page 5
SM5009 series
Electrical Characteristics
5009AH series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
Parameter Sy mbo l Condition
HIGH-level output voltage V L O W-level output voltage V
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Q: Measurement cct 1, IOH = 2 mA 2.2 V
OH
Q: Measurement cct 1, IOL = 2 mA 0.4 V
OL
Q: Measurement cct 2, IN H = LOW, VOH = V
Z
Q: Measurement cct 2, IN H = LOW, VOL = V INH 2.0 V
IH
INH 0.3 V
IL
INH = open, Measurement cct 3,
Current consumption I
load cct 2, CL = 15 pF,
DD
16 MHz crystal oscillator
DD
SS
SM5009AH1S CF5009AH1
SM5009AH2S CF5009AH2
SM5009AH3S CF5009AH3 SM5009AH4S
Rating
min typ max
––10 ––10
4.5 10
–37
1.5 3
CF5009AH4
INH
pull-up resistance R
Negative resistance
Measurement cct 4, VDD = 3 V, INH = V
UP
RLVDD = 3 V, Ta = 25 °C, 16 MH z –450
SS
40 200 k
Feedback resistance RfMeasurement cct 5 0.4 1.1 M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
C
D
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
µA
mA
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
HIGH-level output voltage V L O W-level output voltage V
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Q: Measurement cct 1, IOH = 4 mA 4.0 V
OH
Q: Measurement cct 1, IOL = 4 mA 0.4 V
OL
Q: Measurement cct 2, IN H = LOW, VOH = V
Z
Q: Measurement cct 2, IN H INH 2.0 V
IH
INH 0.8 V
IL
= LOW, VOL = V
DD
SS
SM5009AH1S CF5009AH1
SM5009AH2S CF5009AH2
SM5009AH3S
Current consumption I
INH = open, Measurement cct 3, load cct 2, C
DD
30 MHz crystal oscillator
= 15 pF,
L
CF5009AH3 SM5009AH4S CF5009AH4
INH
pull-up resistance R
Negative resistance
Measurement cct 4, VDD = 5 V, INH = V
UP
RLVDD = 5 V, Ta = 25 °C, 30 MH z –340
SS
Feedback resistance RfMeasurement cct 5 0.4 1.1 M
C
Built-in capacitance
G
Design value, determined by the internal wafer pattern
C
D
Rating
min typ max
––10 ––10
–920
–613
–49
40 200 k
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
µA
mA
NIPPON PRECISION CIRCUITS—5
Page 6
SM5009 series
5009AK series
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
HIGH-level output voltage V L O W-level output voltage V
Q: Measurement cct 1, IOH = 16 mA 4.0 V
OH
Q: Measurement cct 1, IOL = 16 mA 0.4 V
OL
Q: Measurement cct 2, IN H = LOW, VOH = V
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Z
Q: Measurement cct 2, IN H = LOW, VOL = V INH 2.0 V
IH
INH 0.8 V
IL
DD
SS
min typ max
––10 ––10
SM5009AK1S 12 26
Rating
Current consumption I
INH = open, Measurement cct 3, load cct 1, CL = 15 pF,
DD
40 MHz crystal oscillator, Ta = –20 to +80 °C
CF5009AK1 12 26 SM5009AK2S 8 17 CF5009AK2 8 17
pull-up resistance R
INH Negative resistance
Measurement cct 4, VDD = 5 V, INH = V
UP
RLVDD = 5 V, Ta = 25 °C, 40 MH z –210
SS
40 200 k
Feedback resistance RfMeasurement cct 5 0.4 1.1 M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
C
D
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
µA
mA
NIPPON PRECISION CIRCUITS—6
Page 7
SM5009 series
5009AL series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
HIGH-level output voltage V L O W-level output voltage V
Q: Measurement cct 1, IOH = 8 mA 2.2 V
OH
Q: Measurement cct 1, IOL = 8 mA 0.4 V
OL
Q: Measurement cct 2, IN H = LOW, VOH = V
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Z
Q: Measurement cct 2, IN H = LOW, VOL = V INH 0.7V
IH
INH 0.3V
IL
DD
SS
min typ max
––10 ––10
––V
DD
DD
CF5009AL1 8 17 CF5009AL2 5 11
Rating
INH = open, Measurement cct 3,
CF5009AL3 4 9
load cct 2, CL = 15 pF, 40 MHz crystal oscillator
CF5009AL4 3 7 CF5009AL5 3 6 CF5009AL6 2 5
Current consumption I
DD
SM5009AL1S 8 17 SM5009AL2S 5 11
= open, Measurement cct 3,
INH load cct 2, CL = 15 pF, 40 MHz crystal oscillator, Ta = –20 to +80 °C
SM5009AL3S 4 9 SM5009AL4S 3 7 SM5009AL5S 3 6 SM5009AL6S 2 5
Standby current I
INH pull-up resistance
Negative resistance
INH = VSS, Measurement cct 3 2 5 µ A
ST
R
Measurement cct 4, VDD = 3 V, INH = V
UP1
R
Measurement cct 4, VDD = 3 V, INH = 2.1V 40 200 k
UP2
RLVDD = 3 V, Ta = 25 °C, 40 MH z –200
SS
0.6 12 M
Feedback resistance RfMeasurement cct 5 0.4 1.1 M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
C
D
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
µA
V
mA
NIPPON PRECISION CIRCUITS—7
Page 8
SM5009 series
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
Rating
min typ max
HIGH-level output voltage V L O W-level output voltage V
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Q: Measurement cct 1, IOH = 16 mA 4.0 V
OH
Q: Measurement cct 1, IOL = 16 mA 0.4 V
OL
Q: Measurement cct 2, IN H = LOW, VOH = V
Z
Q: Measurement cct 2, IN H = LOW, VOL = V INH 0.7V
IH
INH 0.3V
IL
DD
SS
––10 ––10
––V
DD
DD
CF5009AL1 12 26 CF5009AL2 8 17
INH = open, Measurement cct 3,
CF5009AL3 6 13
load cct 2, CL = 15 pF, 40 MHz crystal oscillator
CF5009AL4 5 11 CF5009AL5 5 10 CF5009AL6 4 9
Current consumption I
DD
SM5009AL1S 12 26 SM5009AL2S 8 17
INH
= open, Measurement cct 3, load cct 2, CL = 15 pF, 40 MHz crystal oscillator, Ta = –20 to +80 °C
SM5009AL3S 6 13 SM5009AL4S 5 11 SM5009AL5S 5 10 SM5009AL6S 4 9
Standby current I
INH pull-up resistance
Negative resistance
INH = VSS, Measurement cct 3 6 1 5 µA
ST
R
Measurement cct 4, VDD = 5 V, INH = V
UP1
R
Measurement cct 4, VDD = 5 V, INH = 3.5V 40 200 k
UP2
RLVDD = 5 V, Ta = 25 °C, 40 MH z –400
SS
0.3 6 M
Feedback resistance RfMeasurement cct 5 0.4 1.1 M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
C
D
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
µA
V
mA
NIPPON PRECISION CIRCUITS—8
Page 9
SM5009 series
5009AN/CN series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
Parameter Sy mbo l Condition
SM5009AN1S, CF5009AN1 SM5009AN2S, CF5009AN2
min typ ma x
2.2
SM5009AN3S, CF5009AN3
Rating
HIGH-level output voltage V
Q: Measurement cct 1, IOH = 8 mA
OH
SM5009AN4S, CF5009AN4 SM5009AN5S, CF5009AN5 SM5009AN6S, CF5009AN6
2.1
SM5009CN1S, CF5009CN1 SM5009CN2S, CF5009CN2
L O W-level output voltage V
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Q: Measurement cct 1, IOL = 8 mA 0.4 V
OL
Q: Measurement cct 2, IN H = LOW, VOH = V
Z
Q: Measurement cct 2, IN H = LOW, VOL = V INH 2.0 V
IH
INH 0.3 V
IL
DD
SS
––10 ––10
SM5009AN1S, CF5009AN1 8 17 SM5009AN2S, CF5009AN2 5 11
Current consumption I
INH = open, Measurement cct 3, load cct 2, CL = 15 pF, 40 MHz crystal oscillator
DD
SM5009AN3S, CF5009AN3 4 9 SM5009AN4S, CF5009AN4 3 7 SM5009AN5S, CF5009AN5 3 6 SM5009AN6S, CF5009AN6 2 5
INH
= open, Measurement cct 3,
SM5009CN1S, CF5009CN1 7 15
load cct 2, CL = 15 pF,
INH
pull-up resistance R
Negative resistance
30 MHz crystal oscillator, Ta = –10 to +70 °C
Measurement cct 4, VDD = 3 V, IN H = V
UP
RLVDD = 3 V, Ta = 25 °C, 40 MH z –100
SM5009CN2S, CF5009CN2 4 9
SS
40 200 k
Feedback resistance RfMeasurement cct 5 0.4 1.1 M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
C
D
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
V
µA
mA
NIPPON PRECISION CIRCUITS—9
Page 10
SM5009 series
5 V operation: V
= 4.5 to 5.5 V, V
DD
= 0 V, Ta = 40 to 85 ° C unless otherwise noted.
SS
Parameter Sy mbo l Condition
HIGH-level output voltage V
L O W-level output voltage V
Q: Measurement cct 1, I
OH
Q: Measurement cct 1, I
OL
Q: Measurement cct 2, IN H
Output leakage current I
HIGH-level input voltage V L O W -level input voltage V
Current consumption I
INH pull-up resistance R Negative resistance Feedback resistance R
Built-in capacitance
Z
Q: Measurement cct 2, IN H INH
IH
INH
IL
INH
= open, Measurement cct 3, load cct 2, C 40 MHz crystal oscillator
DD
INH load cct 2, C 40 MHz crystal oscillator, Ta = –20 to +80
INH load cct 2, C 30 MHz crystal oscillator
Measurement cct 4, V
UP
R
V
L
DD
Measurement cct 5 0.4 1.1 M
f
C
G
Design value, determined by the internal wafer pattern
C
D
= 15 pF,
L
= open, Measurement cct 3,
= 15 pF,
L
°
C
= open, Measurement cct 3,
= 15 pF,
L
DD
= 5 V, Ta = 25
°
C, 40 MH z –210
Rating
min typ ma x
SM5009AN1S, CF5009AN1 SM5009AN2S, CF5009AN2
4.0
SM5009AN3S, CF5009AN3
= 16 mA
OH
SM5009AN4S, CF5009AN4 SM5009AN5S, CF5009AN5 SM5009AN6S, CF5009AN6
3.9
SM5009CN1S, CF5009CN1 SM5009CN2S, CF5009CN2
= 16 mA 0.4 V
OL
= LOW, V = LOW, V
OH
OL
= V
= V
DD
SS
––10 ––10
2.0 V – 0.8 V
CF5009AN1 12 26 CF5009AN2 8 17 CF5009AN3 6 13 CF5009AN4 5 11 CF5009AN5 5 10 CF5009AN6 4 9 SM5009AN1S 12 26 SM5009AN2S 8 17 SM5009AN3S 6 13 SM5009AN4S 5 11 SM5009AN5S 5 10 SM5009AN6S 4 9 SM5009CN1S, CF5009CN1 10 22
SM5009CN2S, CF5009CN2 7 15
= 5 V, IN H = V
SS
40 200 k
5.58 6 6.42 pF
9.3 10 10.7 pF
Unit
V
µA
mA
NIPPON PRECISION CIRCUITS—10
Page 11
SM5009 series
Switching Characteristics
5009AH series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
Parameter Sy mbo l Condition
min typ max
Output rise time t Output fall time t Output duty cycle
1
Output disable delay time t Output enable delay time t Maximum operating
frequency
Measurement cct 3, load cct 2, 0.1VDD to 0.9V
r1
Measurement cct 3, load cct 2, 0.9VDD to 0.1V
f1
, CL = 15 pF 6 18 ns
DD
, CL = 15 pF 6 18 ns
DD
Duty Measurement cct 3, load cct 2, Ta = 25 °C, VDD = 3 V, CL = 15 pF 45 55 %
PLZ
Measurement cct 6, load cct 2, Ta = 25 °C, VDD = 3 V, CL ≤ 15 pF
PZL
Measurement cct 3 16 M H z
f
max
100 ns – 100 ns
1. Determined by the lot monitor.
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
Output rise time t Output fall time t Output duty cycle
1
Output disable delay time t Output enable delay time t Maximum operating
frequency
Measurement cct 3, load cct 2, 0.1VDD to 0.9V
r1
Measurement cct 3, load cct 2, 0.9VDD to 0.1V
f1
Duty Measurement cct 3, load cct 2, Ta = 25 °C, VDD = 5 V, CL = 15 pF 45 55 %
PLZ
Measurement cct 6, load cct 2, Ta = 25 °C, VDD = 5 V, CL ≤ 15 pF
PZL
Measurement cct 3 30 M H z
f
max
1. Determined by the lot monitor.
, CL = 15 pF 4 12 ns
DD
, CL = 15 pF 4 12 ns
DD
min typ max
100 ns – 100 ns
Rating
Unit
Rating
Unit
5009AK series
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
Output rise time t Output fall time t Output duty cycle
1
Output disable delay time t Output enable delay time t
Maximum operating frequency
1. Determined by the lot monitor.
Measurement cct 3, load cct 1, 0.4V to 2.4V, CL = 15 pF 2 6 ns
r
Measurement cct 3, load cct 1, 2.4V to 0.4V, CL = 15 pF 2 6 ns
f
Duty Measurement cct 3, load cct 1, Ta = 25 °C, VDD = 5 V, CL = 15 pF 45 55 %
PLZ
Measurement cct 6, load cct 1, Ta = 25 °C, VDD = 5 V, CL ≤ 15 pF
PZL
Ta = –20 to +80
f
Measurement cct 3
max
Ta = –40 to +85 °C30
Rating
Unit
min typ max
100 ns – 100 ns
°
C40
MHz
NIPPON PRECISION CIRCUITS—11
Page 12
SM5009 series
5009AL series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
Measurement cct 3, load cct 2, 0.1VDD to 0.9V
t
r1
Measurement cct 3, load cct 2, 0.1VDD to 0.9V VDD = 2.3 to 2.7 V, Ta = –20 to +80 °C, CL = 15 pF
Output rise time
Measurement cct 3, load cct 2, 0.1VDD to 0.9V
t
r2
Measurement cct 3, load cct 2, 0.1VDD to 0.9V VDD = 2.3 to 2.7 V, Ta = –20 to +80 °C, CL = 30 pF
Measurement cct 3, load cct 2, 0.9VDD to 0.1V
t
f1
Measurement cct 3, load cct 2, 0.9VDD to 0.1V VDD = 2.3 to 2.7 V, Ta = –20 to +80 °C, CL = 15 pF
Output fall time
Measurement cct 3, load cct 2, 0.9VDD to 0.1V
t
f2
Measurement cct 3, load cct 2, 0.9VDD to 0.1V VDD = 2.3 to 2.7 V, Ta = –20 to +80 °C, CL = 30 pF
Measurement cct 3, load cct 2, Ta = 25 f ≤ 40 MHz, CL = 30 pF
Output duty cycle
1
Measurement cct 3, load cct 2, Ta = 25 °C, VDD = 2.4 V,
Duty
f ≤ 14.4 MHz, CL = 30 pF CF5009AL× only, Measurement cct 3, load cct 2, Ta = 25 °C,
VDD = 2.5 V, f ≤ 30 MHz, CL = 15 pF
2
Output disable delay time Output enable delay time2t
t
PLZ
Measurement cct 6, load cct 2, Ta = 25 °C, VDD = 3 V, CL ≤ 15 pF
PZL
min typ max
, CL = 15 pF 3.5 9
DD
,
DD
, CL = 30 pF 5 12
DD
,
DD
, CL = 15 pF 3.5 9
DD
,
DD
, CL = 30 pF 5 12
DD
,
DD
°
C, VDD = 3 V,
45–55
40–60
40–60
CF5009AL
×
40
–413
5.5 16
–413
5.5 16
100 ns – 100 ns
Unit
ns
ns
%
Measurement cct 3
SM5009AL×S30
Measurement cct 3, Ta = –20 to +80 °C SM5009AL×S40
Rating
= 2.4 to 2.7 V,
°
C
V
DD
SM5009AL×S
= 2.3 to 2.7 V,
V
DD
CF5009AL V
CF5009AL
×
= 2.25 to 2.75 V,
DD
×
14.4
30
20
MHz
Maximum operating frequency
f
max
Measurement cct 3, Ta = –20 to +80
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW , normal output stops. When INH goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS—12
Page 13
SM5009 series
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
Unit
min typ max
Rating
Output rise time
Output fall time
Output duty cycle Output disable delay time
1
2
Output enable delay time2t
Maximum operating frequency
t
r1
Measurement cct 3, load cct 2,
r2
0.1VDD to 0.9V
t
r3
t
f1
Measurement cct 3, load cct 2,
f2
0.9VDD to 0.1V
t
f3
DD
DD
Duty Measurement cct 3, load cct 2, Ta = 25 °C, VDD = 5 V, CL = 50 pF 45 55 %
t
PLZ
Measurement cct 6, load cct 2, Ta = 25 °C, VDD = 5 V, CL ≤ 15 pF
PZL
Measurement cct 3
f
max
CL = 15 pF 2 4 CL = 30 pF 3.5 7 CL = 50 pF 4 8 CL = 15 pF 2 4 CL = 30 pF 3.5 7 CL = 50 pF 4 8
100 ns – 100 ns
CF5009AL
×
40
nst
nst
MHzSM5009AL×S30
Measurement cct 3, Ta = –20 to +80 °C SM5009AL×S40
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW , normal output stops. When INH goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS—13
Page 14
SM5009 series
5009AN/CN series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
Parameter Sy mbo l Condition
Measurement cct 3, load cct 2,
t
r1
0.1VDD to 0.9V
DD ,CL
Output rise time
Measurement cct 3, load cct 2,
t
r2
0.1VDD to 0.9V
Measurement cct 3, load cct 2,
t
f1
0.9VDD to 0.1V
DD ,CL
DD ,CL
Output fall time
Measurement cct 3, load cct 2,
t
f2
Output duty cycle
1
Output disable delay time t Output enable delay time t
Maximum operating frequency
0.9VDD to 0.1V
Measurement cct 3, load cct 2,
Duty
Ta = 25
PLZ
Measurement cct 6, load cct 2, Ta = 25 °C, VDD = 3 V, CL ≤ 15 pF
PZL
f
Measurement cct 3
max
DD ,CL
°
C, VDD = 3 V
1. Determined by the lot monitor.
= 15 pF
= 30 pF
= 15 pF
= 30 pF
SM5009AN1S, CF5009AN1 SM5009AN2S, CF5009AN2
SM5009AN3S, CF5009AN3 SM5009AN4S, CF5009AN4 SM5009AN5S, CF5009AN5 SM5009AN6S, CF5009AN6 SM5009CN1S, CF5009CN1 SM5009CN2S, CF5009CN2
SM5009AN1S, CF5009AN1 SM5009AN2S, CF5009AN2
SM5009AN3S, CF5009AN3 SM5009AN4S, CF5009AN4 SM5009AN5S, CF5009AN5 SM5009AN6S, CF5009AN6 SM5009CN1S, CF5009CN1 SM5009CN2S, CF5009CN2
SM5009AN1S, CF5009AN1 SM5009AN2S, CF5009AN2
SM5009AN3S, CF5009AN3 SM5009AN4S, CF5009AN4 SM5009AN5S, CF5009AN5 SM5009AN6S, CF5009AN6 SM5009CN1S, CF5009CN1 SM5009CN2S, CF5009CN2
SM5009AN1S, CF5009AN1 SM5009AN2S, CF5009AN2
SM5009AN3S, CF5009AN3 SM5009AN4S, CF5009AN4 SM5009AN5S, CF5009AN5 SM5009AN6S, CF5009AN6 SM5009CN1S, CF5009CN1 SM5009CN2S, CF5009CN2
= 30 pF,
C
L
×
SM5009AN
= 15 pF,
C
L
SM5009CN×S, CF5009CN
SM5009AN Ta = –10 to +70
S, CF5009AN
×
S, CF5009AN×40
°
C,
SM5009CN×S, CF5009CN
×
×
×
Rating
min typ ma x
Unit
3.5 9
–513
–512
–716
3.5 9
–513
–512
–716
45–55
40–60
100 ns – 100 ns
30
MHz
ns
ns
%
NIPPON PRECISION CIRCUITS—14
Page 15
SM5009 series
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Sy mbo l Condition
t
r1
Output rise time
Output fall time
Output duty cycle Output disable delay time t Output enable delay time t
Maximum operating frequency
1. Determined by the lot monitor.
1
Measurement cct 3, load cct 2,
r2
0.1VDD to 0.9V
t
r3
t
f1
Measurement cct 3, load cct 2,
f2
0.9VDD to 0.1V
t
f3
Duty Measurement cct 3, load cct 2, Ta = 25 °C, VDD = 5 V, CL = 50 pF 45 55 %
PLZ
Measurement cct 6, load cct 2, Ta = 25 °C, VDD = 5 V, CL ≤ 15 pF
PZL
f
Measurement cct 3
max
DD
DD
CL = 15 pF 2 4 CL = 30 pF 3.5 7 CL = 50 pF 4 8 CL = 15 pF 2 4 CL = 30 pF 3.5 7 CL = 50 pF 4 8
CF5009AN×, SM5009AN×S40 – – SM5009CN×S, CF5009CN×30
Rating
min typ ma x
100 ns – 100 ns
Current consumption and Output waveform with NPC’s standard crystal
Cb
f (MHz) R () L (mH) Ca (fF) Cb (pF)
30 17.2 4.36 6.46 2.26
40 16.8 2.90 5.47 2.08
Unit
nst
nst
MHz
L
Ca R
FUNCTIONAL DESCRIPTION
Standby Function
AH, AK, AN, CN series
When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
AL series
When INH
AH, AK, AN, CN series
Power-save Pull-up Resistance (AL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Version I NH Q Oscillator
HIGH (or open) Any fO , fO/2, fO/4, fO/8, fO/16 or fO/32 output frequency Nor mal operation
LO W High impedance Normal operation
HIGH (or open) Any fO , fO/2, fO/4, fO/8, fO/16 or fO/32 output frequency Nor mal operation
AL series
LO W High impedance Stopped
NIPPON PRECISION CIRCUITS—15
Page 16
MEASUREMENT CIRCUITS
SM5009 series
Measurement cct 1
Signal
Generator
XT input waveform
(10MHz)
Q output
Q output
5009AK×, AL×, AN1, AN2
R1 : 50
R1
R2 : 250Ω(VDD = 4.5V), 275Ω(VDD = 2.7V) R3 : 256Ω(VDD = 4.5V), 288Ω(VDD = 2.7V)
5009AN3 to AN6, CN
R1 : 50
R2 : 245Ω(VDD = 4.5V), 262Ω(VDD = 2.7V) R3 : 256Ω(VDD = 4.5V), 288Ω(VDD = 2.7V)
5009AH
×
R1 : 50
R2 : 1000Ω(VDD = 4.5V), 1100Ω(VDD = 2.7V) R3 : 1025Ω(VDD = 4.5V), 1150Ω(VDD = 2.7V)
XT Q
×
Measurement cct 2
VDD
VSS
When
measuring
When
measuring
V
DD
0V
V
DD
V
OH
0V
V
DD
V
OL
0V
Measurement cct 4
VDD
V
VIH VIL
3.0V or 5.0V
INH
A
IPR
RUP RUP1
RUP2 =
VDD
=
(VIL = 0V)
IPR
DD VIH
V
I
PR
VIH : 2.1V(V DD = 3.0V) V
IH : 3.5V(V DD = 5.0V)
V
OL
R3
R2
V
OH
VSS
Measurement cct 5
VDD
XT
XT
VSS
A
Rf =
DD
V
I
Rf
VDD
Q
VSS
Measurement cct 3
XT
XT
INH
A
VDD
V
VSS
I
Rf
I
Z
I
Z
A
Measurement cct 6
V
OH
V
OL
VDD
IDD IST
Signal Generator
R1
QX'tal
R1 : 50Ω
XT Q
VSS
INH
NIPPON PRECISION CIRCUITS—16
Page 17
SM5009 series
Load cct 1 Load cct 2
R
Q output
C
(Including proove
CL = 15pF : DUTY , I R = 400
capacitance)
, tr , t
DD
L
f
Switching Time Measurement Waveform
Output duty level (CMOS)
Q output
0.9VDD
0.1VDD
TW
tr tf
Output duty level (TTL)
Q output
CL = 15pF : DUTY , IDD , t CL = 30pF : t CL = 50pF : t
r2 r3
0.9VDD
0.1VDD
, t
f2
, t
f3
C
(Including probe
, t
r1
f1
DUTY measurement voltage (0.5V
L
capacitance)
DD)
Q output
Output duty cycle (CMOS)
Q output
Output duty cycle (TTL)
Q output
2.4V
0.4V TW
tr tf
TW
T
TW
T
2.4V
0.4V
DUTY measurement voltage (1.4V
)
DUTY measurement voltage
DUTY= T
(0.5VDD)
W/ T 100 (%)
DUTY measurement voltage
DUTY= T
(1.4V)
W/ T 100 (%)
NIPPON PRECISION CIRCUITS—17
Page 18
Output Enable/Disable Delay
SM5009 series
INH
VIL
tPLZ
VIH
tPZL
Q output
INH input waveform tr = tf 10ns
Note (AL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscil-
lator starts and stable oscillator output occurs after a short delay.
NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies.
NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome
Koto-ku, Tokyo 135-8430, Japan
NIPPON PRECISION CIRCUITS INC.
Telephone: 03-3642-6661 Facsimile: 03-3642-6698
NC9801FE 2000.09
NIPPON PRECISION CIRCUITS—18
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