The CA3338 family are CMOS/SOS high speed R2R voltage
output digital-to-analog converters. They can operate from a
single +5V supply, at video speeds, and can produce
“rail-to-rail” output swings. Internal level shifters and a pin for
an optional second supply provide for an output range below
digital ground. The data complement control allows the inversion of input data while the latch enable control provides
either feedthrough or latched operation. Both ends of the
R2R ladder network are available externally and may be
modulated for gain or offset adjustments. In addition, “glitch”
energy has been kept very low by segmenting and thermometer encoding of the upper 3 bits.
The CA3338 is manufactured on a sapphire substrate to give
low dynamic power dissipation, low output capacitance, and
inherent latch-up resistance.
Ordering Information
PART
NUMBER
LINEARITY
(INL, DNL)
TEMP.
RANGE (oC)PACKAGE
PKG.
NO.
V
1
D7
2
D6
3
D5
4
D4
5
D3
6
D2
7
D1
8
V
SS
16
15
14
13
12
11
10
9
DD
LE
COMP
V
REF
V
OUT
V
REF
V
EE
D0
+
-
CA3338E±1.0 LSB-40 to 8516 Ld PDIPE16.3
CA3338AE±0.75 LSB-40 to 8516 Ld PDIPE16.3
CA3338D±1.0 LSB-55 to 125 16 Ld SBDIPD16.3
CA3338AD±0.75 LSB-55 to 125 16 Ld SBDIPD16.3
CA3338M±1.0 LSB-40 to 8516 Ld SOICM16.3
CA3338AM±0.75 LSB-40 to 8516 Ld SOICM16.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Plastic Package, E suffix, M suffix . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
Electrical Specifications T
= 25oC, VDD = 5V, V
A
+ = 4.608V, VSS = VEE = V
REF
- = GND, LE Clocked at 20MHz, RL≥ 1 MΩ,
REF
Unless Otherwise Specified
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
ACCURACY
Resolution8--Bits
Integral Linearity ErrorSee Figure 4
CA3338--±1LSB
CA3338A--±0.75LSB
Differential Linearity ErrorSee Figure 4
CA3338--±0.75LSB
CA3338A--±0.5LSB
Gain ErrorInput Code = FF
, See Figure 3
HEX
CA3338--±0.75LSB
CA3338A--±0.5LSB
Offset ErrorInput Code = 00
; See Figure 3--±0.25LSB
HEX
DIGITAL INPUT TIMING
Update RateTo Maintain1/2 LSB SettlingDC50-MHz
Update RateV
Set Up Time t
Set Up Time t
Hold Time t
Latch Pulse Width t
Latch Pulse Width t
SU1
SU2
H
W
W
OUTPUT PARAMETERS RL Adjusted for 1V
Output Delay t
Output Delay t
Rise Time t
Settling Time t
D1
D2
r
S
Output ImpedanceV
- = VEE = -2.5V, V
REF
+ = +2.5VDC20-MHz
REF
For Low Glitch--2-ns
For Data Store-8-ns
For Data Store-5-ns
For Data Store-5-ns
V
- = VEE = -2.5V, V
REF
P-P
+ = +2.5V-25-ns
REF
Output
From LE Edge-25-ns
From Data Changing-22-ns
10% to 90% of Output-4-ns
10% to Settling to1/2 LSB-20-ns
+ = 6V, VDD = 6V120160200Ω
REF
Glitch Area-150-pV/s
Glitch AreaV
- = VEE = -2.5V,V
REF
+ = +2.5V-250-pV/s
REF
10-13
Page 4
CA3338, CA3338A
Electrical Specifications T
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
REFERENCE VOLTAGE
V
+ Range(+) Full Scale, Note 1V
REF
V
- Range(-) Full Scale, Note 1V
REF
V
+ Input CurrentV
REF
SUPPLY VOLTAGE
Static IDD or I
Dynamic IDD or I
Dynamic IDD or I
VDD Rejection50kHz Sine Wave Applied-3-mV/V
VEE Rejection50kHz Sine Wave Applied-1-mV/V
DIGITAL INPUTS D0 - D7, LE, COMP
High Level Input VoltageNote 12--V
Low Level Input VoltageNote 1--0.8V
Leakage Current-±1±5µA
Capacitance-5-pF
TEMPERATURE COEFFICIENTS
Output Impedance-
NOTE:
1. Parameter not tested. but guaranteed by design or characterization.
EE
EE
EE
= 25oC, VDD = 5V, V
A
Unless Otherwise Specified (Continued)
+ = 6V, VDD = 6V-4050mA
REF
LE = Low, D0 - D7 = High-100220µA
LE = Low, D0 - D7 = Low--100µA
V
= 10MHz, 0V to 5V Square Wave-20- mA
OUT
V
= 10MHz, ±2.5V Square Wave-25- mA
OUT
+ = 4.608V, VSS = VEE = V
REF
REF
- = GND, LE Clocked at 20MHz, RL≥ 1 MΩ,
REF
- + 3-V
EE
-V
200
DD
+ - 3V
REF
-ppm/oC
V
Pin Descriptions
PINNAMEDESCRIPTION
1D7Most Significant Bit
2D6Input
3D5Data
4D4Bits
5D3(High = True)
6D2
7D1
8VSSDigital Ground
9D0Least Significant Bit. Input Data Bit
10V
11V
12V
13V
14COMP Data Complement Control input. Active High
15LELatch Enable Input. Active Low
16V
Analog Ground
EE
- Reference Voltage Negative Input
REF
Analog Output
OUT
+ Reference Voltage Positive Input
REF
Digital Power Supply, +5V
DD
Digital Signal Path
The digital inputs (LE, COMP, and D0 - D7) are of TTL
compatible HCT High Speed CMOS design: the loading is
essentially capacitive and the logic threshold is typically
1.5V.
The 8 data bits, D0 (weighted 2
are applied to Exclusive OR gates (see Functional Diagram).
The COMP (data complement) control provides the second
input to the gates: if COMP is high, the data bits will be
inverted as they pass through.
The input data and the LE (latch enable) signals are next
applied to a level shifter. The inputs, operating between the
levels of V
and VSS, are shifted to operate between V
DD
and VEE. VEE optionally at ground or at a negative voltage,
will be discussed under bipolar operation. All further logic
elements except the output drivers operate from the V
and VEE supplies.
The upper 3 bits of data, D5 through D7, are input to a 3-to-7
line bar graph encoder. The encoder outputs and D0 through
D4 are applied to a feedthrough latch, which is controlled by
LE (latch enable).
0
) through D7 (weighted 27),
DD
DD
10-14
Page 5
CA3338, CA3338A
INPUT DATA
t
SU1
LATCHEDLATCHED
LATCH
ENABLE
FIGURE 1. DATA TO LATCH ENABLE TIMING
INPUT
DAT A
LATCH
ENABLE
OUTPUT
VOLTAGE
FIGURE 2. DATA AND LATCH ENABLE TO OUTPUT TIMING
t
W
DAT A
FEEDTHROUGH
t
D1
t
D2
90%
t
r
10%
t
t
S
t
H
SU2
1
/2 LSB
1
/2 LSB
Latch Operation
Data is fed from input to output while LE is low: LE should be
tied low for non-clocked operation.
Non-clocked operation or changing data while LE is low is
not recommended for applications requiring low output
“glitch” energy: there is no guarantee of the simultaneous
changing of input data or the equal propagation delay of all
bits through the converter. Several parameters are given if
the converter is to be used in either of these modes: t
gives the delay from the input changing to the output changing (10%), while t
and tH give the set up and hold times
SU2
(referred to LE rising edge) needed to latch data. See
Figures 1 and 2.
Clocked operation is needed for low “glitch” energy use.
Data must meet the given t
edge, and the t
hold time from the LE rising edge. The
H
delay to the output changing, t
set up time to the LE falling
SU1
, is now referred to the LE
D1
falling edge.
D2
In unipolar operation, V
- would typically be returned to
REF
analog ground, but may be raised abo v e g round (see specifications). There is substantial code dependent current that
flows from V
specifications), so V
REF
+ to V
REF
REF
- (see V
+ input current in
REF
- should have a low impedance path
to ground.
In bipolar operation, V
voltage (the maximum voltage rating to V
observed). V
, which supplies the gate potential for the
EE
- would be returned to a negative
REF
must be
DD
output drivers, must be returned to a point at least as negative as V
-. Note that the maximum clocking speed
REF
decreases when the bipolar mode is used.
Static Characteristics
The ideal 8-bit D/A would have an output equal to V
an input code of 00
equal to 255/256 of V
code of FF
(full scale output). The difference between the
HEX
(zero scale output), and an output
HEX
+ (referred to V
REF
-) with an input
REF
ideal and actual values of these two parameters are the OFFSET and GAIN errors, respectively; see Figure 3.
If the code into an 8-bit D/A is changed by 1 count, the output
should change by 1/255 (full scale output - zero scale output). A
deviation from this step size is a differential linearity error, see
Figure 4. Note that the error is expressed in fractions of the
ideal step size (usually called an LSB). Also note that if the (-)
differential linearity error is less (in absolute numbers) than 1
LSB, the device is monotonic. (The output will always increase
for increasing code or decrease for decreasing code).
If the code into an 8-bit D/A is at any value, say “N”, the output
voltage should be N/255 of the full scale output (referred to the
zero scale output). Any deviation from that output is an integral
linearity error, usually expressed in LSBs . See Figure 4.
Note that OFFSET and GAIN errors do not affect integral
linearity, as the linearity is referenced to actual zero and full
scale outputs, not ideal. Absolute accuracy would have to
also take these errors into account.
255/256
REF
+ - V
254/256
REF
253/256
= IDEAL TRANSFER CURVE
= ACTUAL TRANSFER CURVE
GAIN ERROR
(SHOWN -)
REF
- with
There is no need for a square wave LE clock; LE must only
meet the minimum t
pulse width for successful latch opera-
W
tion. Generally, output timing (desired accuracy of settling)
sets the upper limit of usable clock frequency.
Output Structure
The latches feed data to a row of high current CMOS drivers,
which in turn feed a modified R2R ladder network.
The “N” channel (pull down) transistor of each driver plus the
bottom “2R” resistor are returned to V
scale reference. The “P” channel (pull up) transistor of each
driver is returned to V
+, the (+) full-scale reference.
REF
- this is the (-) full-
REF
10-15
3/256
2/256
1/256
OUTPUT VOLTAGE AS A FRACTION OF V
OFFSET
ERROR
(SHOWN +)
0
00010203FDFEFF
INPUT CODE IN HEXADECIMAL (COMP = LOW)
FIGURE 3. D/A OFFSET AND GAIN ERROR
Page 6
CA3338, CA3338A
STRAIGHT LINE
FROM “0” SCALE
TO FULL SCALE
= IDEAL TRANSFER CURVE
= ACTUAL TRANSFER CURVE
OUTPUT VOLTAGE
0
00
A
C
VOLTAGE
INTEGRAL LINEARITY
ERROR (SHOWN -)
B
A = IDEAL STEP SIZE (1/255 OF FULL
SCALE -“0” SCALE VOLTAGE)
B - A = +DIFFERENTIAL LINEARITY ERROR
C - A = -DIFFERENTIAL LINEARITY ERROR
INPUT CODE
FIGURE 4. D/A INTEGRAL AND DIFFERENTIAL LINEARITY
ERROR
Dynamic Characteristics
Keeping the full-scale range (V
possible gives the best linearity and lowest “glitch” energy
(referred to 1V). This provides the best “P” and “N” channel
gate drives (hence saturation resistance) and propagation
REF
+ - V
-) as high as
REF
delays. The V
REF
+ (and V
- if bipolar) terminal should be
REF
well bypassed as near the chip as possible.
“Glitch” energy is defined as a spurious voltage that occurs as
the output is changed from one voltage to another. In a binary
input converter, it is usually highest at the most significant bit
transition (7F
HEX
to 80
for an 8 bit device), and can be
HEX
measured by displaying the output as the input code alternates around that point. The “glitch” energy is the area
between the actual output display and an ideal one LSB step
voltage (subtracting negative area from positive), at either the
positive or negative-going step . It is usually e xpressed in pV/s .
The CA3338 uses a modified R2R ladder, where the 3 most
significant bits drive a bar graph decoder and 7 equally
weighted resistors. This makes the “glitch” energy at each
scale transition (1F
HEX
to 20
HEX
, 3F
HEX
to 40
HEX
1
, etc.)
essentially equal, and far less than the MSB transition would
otherwise display.
For the purpose of comparison to other converters, the output
should be resistively divided to 1V full scale. Figure 5 shows a
typical hook-up for checking “glitch” energy or settling time.
The settling time of the A/D is mainly a function of the output
resistance (approximately 160Ω in parallel with the load resistance) and the load plus internal chip capacitance. Both
“glitch” energy and settling time measurements require very
good circuit and probe grounding: a probe tip connector such
as Tektronix part number 131-0258-00 is recommended.
/
8
CA3338
CLOCK
8 DATA BITS
+5V
DIGITAL
GROUND
1-7, 9
15
LE
D0 - D7
16
V
DD
+
14
COMP
8
V
SS
12
V
OUT
13
V
+
REF
11
-
V
REF
10
V
EE
+
+
+5V
+2.5V
-2.5V
R1
PROBE TIP
OR BNC
CONNECTOR
R2
FUNCTIONCONNECTORR1R2R3V
Oscilloscope DisplayProbe Tip82Ω62ΩN/C1V
Match 93Ω CableBNC75160931V
Match 75Ω CableBNC18130751V
Match 50Ω CableBNCShort75500 79V
NOTES:
2. V
OUT(P-P)
is approximate, and will vary as R
of D/A varies.
OUT
3. All drawn capacitors are 0.1µF multilayer ceramic/4.7µF tantalum.
4. Dashed connections are for unipolar operation. Solid connection are for bipolar operation.
FIGURE 5. CA3338 DYNAMIC TEST CIRCUIT
ANALOG
GROUND
OUT (P-P)
R3
REMOTE
V
OUT
10-16
Page 7
CA3338
15
16
14
8
LE
D0 - D7
V
DD
COMP
V
SS
V
V
V
REF
REF
OUT
V
EE
+
-
CLOCK
8 DATA
BITS
+5V
1-7, 9
4.7µF
+
TAN
0.1µF
CER.
NOTES:
1. Both V
+pin and 392Ω resistor should be
REF
bypassed within1/4 inch.
2. Keep nodal capacitance at CA3450 pin 3 as
low as possible.
3. V
Range = ±3V at CA3450.
OUT
FIGURE 6. CA3338 AND CA3450 FOR DRIVING MULTIPLE COAXIAL LINES
CA3338, CA3338A
+6V
4.7µF TAN
+
0.1µF
CER.
12
+3.00V AT 25mA
392Ω
13
11
10
+
4.7µF TAN
1%
1kΩ
10kΩ
ADJUST
OFFSET
0.1µF CER.
7, 8
14
3
392Ω
1%
9
+
CA3450
-
4, 5, 12, 13
-6V
5pF
11
6
0.1µF CER.
+
4.7µF
TAN
UP TO 5 OUTPUT LINES
FOR R = 75Ω, 3 LINES
FOR R = 50Ω
R
V
= ±1.5V
OUT
R
PEAK
V
1
OUT
R
V
N
OUT
R
TABLE 1. OUTPUT VOLTAGE vs INPUT CODE AND V
V
+
REF
V
-
REF
STEP SIZE
5.12V
0
0.0200V
5.00V
0
0.0195V
4.608V
0
0.0180V
2.56V
-2.56V
0.0200V
REF
2.50V
-2.50V
0.0195V
Input Code
111111112 = FF
111111102 = FE-
HEX
HEX
5.1000V
5.0800
4.9805V
4.9610
4.5900V
4.5720
2.5400V
2.5200
2.4805V
2.4610
•
•
•
100000012 = 81
100000002 = 80
011111112 = 7F
HEX
HEX
HEX
2.5800
2.5600
2.5400
2.5195
2.5000
2.4805
2.3220
2.3040
2.2860
0.0200
0.0000
- 0.0200
0.0195
0.0000
-0.0195
•
•
•
000000012= 01
000000002= 00
HEX
HEX
0.0200
0.0000
0.0195
0.0000
0.0180
0.0000
-2.5400
-2.5600
-2.4805
-2.5000
Applications
The output of the CA3338 can be resistively divided to match a
doubly terminated 50Ω or 75Ω line, although peak-to-peak
swings of less than 1V may result. The output magnitude will
also vary with the converter’s output impedance. Figure 5
shows such an application. Note that because of the HCT input
structure, the CA3338 could be operated up to +7.5V V
V
+ supplies and still accept 0V to 5V CMOS input voltages.
REF
If larger voltage swings or better accuracy is desired, a high
speed output buffer, such as the HA-5033, HA-2542, or
CA3450, can be employed. Figure 6 shows a typical application, with the output capable of driving ±2V into multiple 50Ω
terminated lines.
DD
and
Operating and Handling Considerations
HANDLING
All inputs and outputs of CMOS devices have a network
for electrostatic protection during handling. Recommended handling practices for CMOS devices are
described in AN6525. “Guide to Better Handling and
Operation of CMOS Integrated Circuits.”
OPERATING
Operating Voltage
During operation near the maximum supply voltage limit,
care should be taken to avoid or suppress power supply
turn-on and turn-off transients, power supply ripple, or
ground noise; any of these conditions must not cause the
absolute maximum ratings to be exceeded.
Input Signals
To prevent damage to the input protection circuit, input
signals should never be greater than V
V
. Input currents must not exceed 20mA even when
SS
the power supply is off.
Unused Inputs
A connection must be provided at ev ery input terminal. All
unused input terminals must be connected to either V
or GND, whichever is appropriate.
nor less than
DD
CC
10-17
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