Page 1
CA3045, CA3046
Data Sheet September 1998 File Number 341.4
General Purpose NPN Transistor Arrays
The CA3045 and CA3046 each consist of five general
purpose silicon NPN transistors on a common monolithic
substrate. Two of the transistors are internally connected to
form a differentially connected pair.
The transistors of the CA3045 and CA3046 are wellsuitedto
a wide variety ofapplicationsinlowpowersystems in the DC
through VHF range. They may be used as discrete
transistors in conventional circuits. However,in addition, they
provide the very significant inherent integrated circuit
advantages of close electrical and thermal matching.
Ordering Information
PART NUMBER
(BRAND)
CA3045F -55 to 125 14 Ld CERDIP F14.3
CA3046 -55 to 125 14 Ld PDIP E14.3
CA3046M
(3046)
CA3046M96
(3046)
TEMP.
RANGE (oC) PACKAGE
-55 to 125 14 Ld SOIC M14.15
-55 to 125 14 Ld SOIC Tape
and Reel
PKG.
M14.15
NO.
Features
• Two Matched Transistors
-V
Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
BE
-I
Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max)
IO
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• 5 General Purpose Monolithic Transistors
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range
Applications
• Three Isolated Transistors and One Differentially
Connected Transistor Pair for Low Power Applications at
Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018
Integrated-Circuit Transistor Array” for Suggested
Applications
Pinout
DIFFERENTIAL
CA3045, (CERDIP)
CA3046 (PDIP, SOIC)
TOP VIEW
1
2
PAIR
3
4
5
6
7
14
Q
5
13
Q
4
SUBSTRATE
12
11
10
9
8
Q
1
Q
2
Q
3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 1999
Page 2
CA3045, CA3046
Absolute Maximum Ratings Thermal Information
Collector-to-Emitter Voltage (V
Collector-to-Base Voltage (V
Collector-to-Substrate Voltage (V
Emitter-to-Base Voltage (V
Collector Current (IC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Thecollector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
) . . . . . . . . . . . . . . . . . . . . . 15V
CEO
) . . . . . . . . . . . . . . . . . . . . . . . 20V
CBO
, Note 1). . . . . . . . . . . . . . 20V
CIO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
EBO
Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A
CERDIP Package. . . . . . . . . . . . . . . . . 150 75
SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages). . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications T
= 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Collector-to-Substrate Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Collector Cutoff Current (Figure 1) I
Collector Cutoff Current (Figure 2) I
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
InputOffset Current for Matched PairQ1andQ2.
|I
- I
IO1
| (Note 3) (Figure 4)
IO2
Base-to-Emitter Voltage (Note 3) (Figure 5) V
MagnitudeofInputOffetVoltageforDifferentialPair
|V
- V
BE1
| (Note 3) (Figures 5, 7)
BE2
Magnitude of Input Offset Voltage for Isolated
Transistors |V
|V
- V
BE5
- V
BE4
|, |V
BE3
| (Note 3) (Figures 5, 7)
BE3
BE4
- V
BE5
|,
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
(BR)CBOIC
(BR)CEOIC
(BR)CIOIC
(BR)EBOIE
CBO
CEO
h
FE
BE
∆V
BE
-------------- -
∆T
= 10µA, IE = 0 20 60 - V
= 1mA, IB = 0 15 24 - V
= 10µA, ICI = 0 20 60 - V
= 10µA, IC = 0 5 7 - V
VCB = 10V, IE = 0 - 0.002 40 nA
VCE = 10V, IB = 0 - See Fig. 2 0.5 µA
VCE = 3V IC = 10mA - 100 - -
IC = 1mA 40 100 - IC = 10µA-54--
VCE = 3V, IC = 1mA - 0.3 2 µA
VCE = 3V IE = 1mA - 0.715 - V
IE = 10mA - 0.800 - V
VCE = 3V, IC = 1mA - 0.45 5 mV
VCE = 3V, IC = 1mA - 0.45 5 mV
VCE = 3V, IC = 1mA - -1.9 - mV/oC
Collector-to-Emitter Saturation Voltage V
Temperature Coefficient: Magnitude of Input Off-
set Voltage (Figure 7)
CES
∆V
----------------
∆T
IB = 1mA, IC = 10mA - 0.23 - V
VCE = 3V, IC = 1mA - 1.1 - µV/oC
IO
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9) NF f = 1kHz, VCE = 3V, IC = 100µA,
Source Resistance = 1kΩ
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transf er Ratio (Figure 11) h
Short Circuit Input Impedance (Figure 11) h
FE
IE
f = 1kHz, VCE = 3V, IC = 1mA - 110 - f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - kΩ
2
- 3.25 - dB
Page 3
CA3045, CA3046
Electrical Specifications T
= 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified (Continued)
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Open Circuit Output Impedance (Figure 11) h
OpenCircuit Reverse Voltage Transfer Ratio
(Figure 11)
Admittance Characteristics
Forward Transfer Admittance (Figure 12) Y
Input Admittance (Figure 13) Y
Output Admittance (Figure 14) Y
Reverse Transfer Admittance (Figure 15) Y
Gain Bandwidth Product (Figure 16) f
Emitter-to-Base Capacitance C
Collector-to-Base Capacitance C
Collector-to-Substrate Capacitance C
NOTE:
3. Actual forcing current is via the emitter for this test.
Typical Performance Curves
2
10
IE = 0
10
1
-1
10
V
CB
V
CB
= 5V
VCB= 15V
= 10V
OE
h
RE
FE
IE
OE
RE
T
EB
CB
CI
f = 1kHz, VCE = 3V, IC = 1mA - 15.6 - µS
f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10
-4
--
f = 1kHz, VCE = 3V, IC = 1mA - 31 - j1.5 - f = 1kHz, VCE = 3V, IC = 1mA - 0.3 + j0.04 - f = 1kHz, VCE = 3V, IC = 1mA - 0.001 + j0.03 - f = 1kHz, VCE = 3V, IC = 1mA - See Fig. 14 - VCE = 3V, IC = 3mA 300 550 - MHz
VEB = 3V, IE = 0 - 0.6 - pF
VCB = 3V, IC = 0 - 0.58 - pF
VCS = 3V, IC = 0 - 2.8 - pF
3
10
IB = 0
2
10
10
1
VCE = 10V
VCE = 5V
-2
10
-3
10
COLLECTOR CUTOFF CURRENT (nA)
-4
10
0 25 50 75 100 125
TEMPERATURE (oC)
FIGURE1. TYPICALCOLLECTOR-TO-BASECUTOFFCURRENT
vs TEMPERA TURE FOR EACH TRANSISTOR
120
VCE = 3V
T
110
)
FE
100
90
80
70
TRANSFER RATIO (h
STATIC FORWARD CURRENT
60
50
0.01
= 25oC
A
h
FE
OR
h
FE2
-------------
h
FE1
h
FE1
-------------
h
FE2
0.1 1.0 10
EMITTER CURRENT (mA)
1.1
1.0
0.9
0.8
FIGURE 3. TYPICAL STATIC FORWARDCURRENT TRANSFER
RA TIO AND BETA RATIO FOR Q1 AND Q2 vs
EMITTER CURRENT
BETA RATIO
-1
10
-2
10
COLLECTOR CUTOFF CURRENT (nA)
-3
10
0 25 50 75 100 125
TEMPERATURE (
o
C)
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
10
VCE = 3V
= 25oC
T
A
1.0
0.1
INPUT OFFSET CURRENT (µA)
0.01
0.01 0.1 1.0 10
COLLECTOR CURRENT (mA)
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q1Q2 vs
COLLECTOR CURRENT
3
Page 4
Typical Performance Curves (Continued)
0.8
VCE = 3V
T
= 25oC
A
CA3045, CA3046
VCE= 3V
1.0
0.7
0.6
0.5
INPUT OFFSET VOLTAGE
BASE-TO-EMITTER VOLTAGE (V)
0.4
0.01 0.1 1.0 10
V
BE
EMITTER CURRENT (mA)
3
2
1
0
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTERVOLTAGE
CHARACTERISTICSAND INPUT OFFSET VOLTA GE
FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED
TRANSISTORS vs EMITTER CURRENT
VCE = 3V
4.00
3.00
2.00
0.75
0.50
0.25
INPUT OFFSET VOLTAGE (mV)
0
-75 -50 -25 0 25 50 75 100 125
IE = 10mA
IE = 1mA
IE = 0.1mA
TEMPERATURE (
o
C)
FIGURE7. TYPICALINPUTOFFSETVOL T A GECHARACTERISTICS
FOR DIFFERENTIAL P AIR AND PAIRED
ISOLA TED TRANSISTORS vs TEMPERATURE
INPUT OFFSET VOLTAGE (mV)
0.9
0.8
0.7
0.6
0.5
BASE-TO-EMITTER VOLTAGE (V)
0.4
IE= 3mA
= 1mA
I
E
= 0.5mA
I
E
-75 -50 -25 0 25 50 75 100 125
TEMPERATURE (
o
C)
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC vs TEMPERATURE FOR EACH
TRANSISTOR
VCE = 3V
= 500Ω
R
S
T
= 25oC
A
20
15
10
5
NOISE FIGURE (dB)
0
0.01 0.1 1.0
f = 0.1kHz
f = 1kHz
f = 10kHz
COLLECTOR CURRENT (mA)
FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
VCE = 3V
R
= 1000Ω
S
T
= 25oC
A
20
15
f = 1kHz
10
5
NOISE FIGURE (dB)
0
0.01 0.1 1
f = 10kHz
f = 0.1kHz
COLLECTOR CURRENT (mA)
30
VCE = 3V
= 10000Ω
R
S
25
= 25oC
T
A
20
15
10
NOISE FIGURE (dB)
5
0
f = 1kHz
f = 10kHz
0.01 0.1 1
f = 0.1kHz
COLLECTOR CURRENT (mA)
FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
4
Page 5
Typical Performance Curves (Continued)
100
VCE = 3V
10
1.0
f = 1kHz
= 25oC
T
A
h
RE
h
IE
hFE = 110
= 3.5kΩ
h
IE
h
= 1.88 x 10
RE
hOE = 15.6µS
AT
-4
1mA
CA3045, CA3046
)
h
OE
h
FE
FE
COMMON EMITTER CIRCUIT, BASE INPUT
40
TA = 25oC, VCE = 3V, IC = 1mA
) (mS)
30
FE
20
10
0
g
FE
NORMALIZED h PARAMETERS
0.1
0.01 0.1 1.0 10
COLLECTOR CURRENT (mA)
h
RE
FIGURE11. TYPICAL NORMALIZEDFORW ARDCURRENT
TRANSFER RA TIO , SHORT CIRCUIT INPUT
IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE,
AND OPEN CIRCUIT REVERSE VOLT A GE TRANSFER
RA TIO vs COLLECT OR CURRENT
6
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
5
)
IE
) (mS)
IE
4
3
2
INPUT CONDUCTANCE (g
OR SUSCEPTANCE (b
1
0
0.1 10 100
g
IE
1
FREQUENCY (MHz)
OR SUSCEPTANCE (b
-10
h
IE
FORWARD TRANSFER CONDUCTANCE (g
-20
0.1 10 100
b
FE
1
FREQUENCY (MHz)
FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCEvs
FREQUENCY
COMMON EMITTER CIRCUIT, BASE INPUT
6
TA = 25oC, VCE = 3V, IC = 1mA
)
OE
5
) (mS)
OE
4
b
IE
3
2
OR SUSCEPTANCE (b
OUTPUT CONDUCTANCE (g
1
0
0.1 10 1001
FREQUENCY (MHz)
b
OE
g
OE
FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY
)
RE
REVERSE TRANSFER CONDUCTANCE (g
FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCEvs
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
) (mS)
RE
0
-0.5
-1.0
OR SUSCEPTANCE (b
-1.5
-2.0
1 10010
gREIS SMALL AT FREQUENCIES
FREQUENCY (MHz)
FREQUENCY
LESS THAN 500MHz
VCE = 3V
T
= 25oC
1000
b
RE
GAIN BANDWIDTH PRODUCT (MHz)
A
900
800
700
600
500
400
300
200
100
01234567891011121314
COLLECTOR CURRENT (mA)
FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
5
Page 6
CA3045, CA3046
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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6
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