Datasheet CA3039 Datasheet (Intersil Corporation)

CA3039

November 1996

Features

• Six Matched Diodes on a Common Substrate

• Excellent Reverse Recovery Time . . . . . . . . . 1ns (Typ)

Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV (Max)

•V

F

• Low Capacitance . . . . . . C

= 0.65pF (Typ) at VR = -2V

D

Applications

• Ultra-Fast Low Capacitance Matched Diodes for

Applications in Communications and Switching
Systems

• Balanced Modulators or Demodulators

• Ring Modulators

• High Speed Diode Gates

• Analog Switches

Diode Array

Description

The CA3039 consists of six ultra-fast, low capacitance
diodes on a common monolithic substrate. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the array extremely useful for a wide
variety of applications in communication and switching
systems.

Five of the diodes are independently accessible, the sixth
shares a common terminal with the substrate.

For applications such as balanced modulators or ring
modulators where capacitive balance is important, the
substrate should be returned to a DC potential which is
significantly more negative (with respect to the active diodes)
than the peak signal applied.

Ordering Information

TEMP.

PART NUMBER

CA3039 -55 to 125 12 Pin Metal Can T12.B
CA3039M -55 to 125 14 Ld SOIC M14.15
CA3039M96 -55 to 125 14 Ld SOIC Tape

RANGE (oC) PACKAGE

and Reel

PKG.

NO.

M14.15

Pinouts

NC

CA3039

(SOIC)

TOP VIEW

1
2
3

D

4

4
5

D

3

6
7

CA3039

(METAL CAN)

TOP VIEW

D

D

14

5

13

SUBSTRATE

12

D

6DS

11
10

D

1

NC

9

2

8

2

3

4

12

1

D

4

D

3

D

5

11

D

5

D

2

6

10

6

D

9

D

S

1

8

7

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

7-18

File Number 343.3

CA3039

Absolute Maximum Ratings Thermal Information

Inverse Voltage (PIV) for: D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V

D6. . . . . . . . . . . . . . . . . . . . . . .0.5V

Diode-to-Substrate Voltage (VDI) for D1 - D5. . . . . . . . . . . .20V, -1V

(Terminal 1, 4, 5, 8 or 12 to Terminal 10)

DC Forward Current (IF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA

Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . .100mA

Forward Surge Current (I

(SURGE)

F

). . . . . . . . . . . . . . . . . . . .100mA

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W)

Metal Can Package. . . . . . . . . . . . . . . 200 120

SOIC Package. . . . . . . . . . . . . . . . . . . 220 N/A

Maximum Power Dissipation (Any One Diode) . . . . . . . . . . .100mW

Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC

Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

Electrical Specifications T

= 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

DC Forward Voltage Drop (Figure 1) V

DC Reverse Breakdown Voltage V
DC Reverse Breakdown Voltage Between Any

Diode Unit and Substrate
DC Reverse (Leakage) Current (Figure 2) I
DC Reverse (Leakage) Current Between Any

Diode Unit and Substrate (Figure 3)
Magnitude of Diode Offset Voltage (Note 2)

VF1VF2–

(Figure 1)
Temperature Coefficient of |V

- VF2| (Figure 4) IF = 1mA - 1.0 - µV/oC

F1

∆ VF1VF2–

----------------------------------

Temperature Coefficient of Forward Drop
(Figure 5)

(BR)R

V

(BR)R

∆T

∆V

-----------

∆T

F

IF = 50µA - 0.65 0.69 V

= 1mA - 0.73 0.78 V

I

F

I

= 3mA - 0.76 0.80 V

F

= 10mA - 0.81 0.90 V

I

F

IR = -10µA57-V
IR = -10µA20--V

R

I

R

F

VR = -4V - 0.016 100 nA
VR = -10V - 0.022 100 nA

I

= 1mA - 0.5 5.0 mV

F

= 1mA - -1.9 - mV/oC

I

F

DC Forward Voltage Drop for Anode-to­Substrate Diode (D

)

S

Reverse Recovery Time t
Diode Resistance (Figure 6) R
Diode Capacitance (Figure 7) C
Diode-to-Substrate Capacitance (Figure 8) C

V

RR

F

D

D

DI

IF = 1mA - 0.65 - V

IF = 10mA, IR = -10mA - 1.0 - ns
f = 1kHz, IF = 1mA 25 30 45 Ω
VR = -2V, IF = 0 - 0.65 - pF
VDI = 4V, IF = 0 - 3.2 - pF

NOTE:

2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.

7-19

Typical Performance Curves

TA = 25oC

0.8

CA3039

6

10

VR = -4V

FORWARD VOLTAGE DROP (V

0.7

0.6

DC FORWARD VOLTAGE (V)

0.5

DIODE OFFSET

0.01 0.1 1 10
DC FORWARD CURRENT (mA)

VF1V

)

F

–()

F2

5

4

3

2

1

0

FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND

DIODE OFFSET VOLTAGE vs DC FORWARD
CURRENT

100

VR = -10V

10

1

0.1

0.01

DC REVERSE CURRENT (nA)

1

0.1

0.01

DC REVERSE CURRENT (nA)

DIODE OFFSET VOLTAGE (mV)

0.001

-75

-50 -25 0 25 50 75 100 125
TEMPERATURE (

o

C)

FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D1 - D5) vs

TEMPERATURE

4

(mV)

3

F2

V

–()

2

F1

V

0.7

0.6

0.5

0.4

IF = 10mA

IF = 1mA

IF = 0.1mA

0.001

-75

-50 -25 0 25 50 75 100 125
TEMPERATURE (

o

C)

FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D1,

D2, D3, D4, D5 AND SUBSTRA TE vsTEMPERATURE

IF = 1mA

0.9

0.8

0.7

0.6

0.5

DC FORWARD VOLTAGE (V)

0.4

-75 -50 -25 0 25 50 75 100 125
TEMPERATURE (

o

C)

FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs

TEMPERATURE

0.3

DIODE OFFSET VOLTAGE

-75 -50 -25 0 25 50 75 100 125
TEMPERATURE (

o

C)

FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs

TEMPERATURE

1000

100

10

DIODE RESISTANCE (Ω)

1

0.01 0.1 1 10
DC FORWARD CURRENT (mA)

TA = 25oC
f = 1kHz

FIGURE 6. DIODE RESIST ANCE (ANY DIODE) vs DC

FORWARD CURRENT

7-20

Typical Performance Curves (Continued)

CA3039

6

TA = 25oC

= 0

I

F

5

4

3

2

DIODE CAPACITANCE (pF)

1

01234

DC REVERSE VOLTAGE ACROSS DIODE (V)

FIGURE 7. DIODE CAP ACITANCE (D1 - D5) vs REVERSE

VOLTAGE

6

TA = 25oC

= 0

I

F

5

4

3

2

1

0

DIODE TO SUBSTRATE CAPACITANCE (pF)

01234

DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12

AND SUBSTRATE (TERMINAL 10) (V)

FIGURE 8. DIODE-TO-SUBSTRA TE CAPACIT ANCE vs

REVERSE VOLTAGE

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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