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G•SiC® Technology
SuperBright LEDs
C430-CB230-E1000
Features Applications
O High Performance
• Segmented Displays
– 650 µW (465nm)
• Single Wire Bond Structure • High Resolution Video Displays
• Class II ESD Rating
Description
Cree’s CB series of SuperBright LEDs are a new generation of solid-state LED emitters which
combine highly efficient AlGaN/GaN single heterojunctions (SH) with Cree’s proprietary SiC
substrate to deliver the ultimate price/performance for high intensity blue LEDs. The C430-CB230E1000 is designed for use in backlighting applications. The C430-CB230-E1000 has a typical output
of 650 µW and a 465nm dominant wavelength (at 10 mA).
C430-CB230-E1000 Chip Diagram
Topside View
G
•
SiC® LED Chip
200 x 200 µm
Mesa (junction)
175 x 175 µm
Gold Bond Pad
112 µm Diameter
A
node (+)
Die Cross Section
t = 250
µm
Backside
Metallization
Cathode (-)
GaN
SiC Substrate
CPR3AB Rev. D
© 2003 Cree, Inc. All Rights Reserved
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®
G•SiC Technology
SuperBright LEDs
C430-CB230-E1000
Maximum Ratings at T
A
= 25°C
Notes 1&3
C430-CB230-E1000
DC Forward Current 15 mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 35 mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -20°C to +80°C
Storage Temperature Range -30°C to +100°C
Electrostatic Discharge Threshold (HBM)
Note 2
1000 V
Typical Electrical/Optical Characteristics at TA = 25°C, If = 10mA
Note 3
Part Number
Forward
Voltage
(V
f,
V)
Radiant Flux
(P, µW)
Reverse
Current
[I(Vr=5V),
µA]
Flux
(mlm)
Peak
Wavelength
(λ
p,
nm)
Dominant
Wavelength
(λ
d,
nm)
Halfwidth
(λ
D,
nm)
Optical
Rise Time
(τ, ns)
Typ Max Min Typ Max Typ Typ Min Typ Max Typ Typ
C430CB230E1000 4.0 4.5 425 650 10 40 428 462 465 466 65 30
Mechanical Specifications
Note 4
C430-CB230-E1000
Description Dimension Tolerance
P-N Junction Area (µm) 175 x 175 ± 25
Bottom Area (µm) 200 x 200 ± 25
Chip Thickness (µm) 250 ± 25
Au Bond Pad Diameter (µm) 112 ± 20
Au Bond Pad Thickness (µm) 1.2 ± 0.5
Back Contact Metal Width (µm) 19.8 +10, -5
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Seller makes no
representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G •SiC die but by the
effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in
a specific package to determine limitations. Assembly processing temperature must not exceed 350°C (< 15 minutes).
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to
approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 10 mA within the maximum
ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information
only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy).
Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.
4) All Products conform to the listed mechanical specifications within the tolerances shown.
CPR3AB Rev. D
© 2003 Cree, Inc. All Rights Reserved
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