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G•SiC® Technology
SuperBlue™ LED
C430-CB290-E1000
Features Applications
• High Performance – 1150µW • Full Color Displays & Moving Message Signs
• Superior SiC Substrate Technology • Solid State Incandescent Replacement Bulbs
• 465nm Dominant Wavelength • High Ambient Panel Indicators
• Excellent Chip to Chip Consistency • Color Printers & Scanners
• High Reliability • Medical & Analytical Instruments
Description
Cree’s SuperBlue™ combine highly efficient GaN with Cree’s proprietary SiC® substrate to deliver
the ultimate price/performance for high intensity blue LEDs. The C430-CB290-E1000 is designed
for use in high ambient light conditions with a typical output of 1150 µW and a 465nm dominant
wavelength (at 20 mA).
C430-CB290-E1000 Chip Diagram
Topside View
G
•
SiC® LED Chip
275 x 275 µm
Mesa (junction)
240 x 240 µm
Gold Bond Pad
114 µm Diameter
Anode (+)
Die Cross Section
t = 250 µm
Backside
Metallization
Cathode (-)
GaN
SiC Substrate
CPR3L Rev. H
© 1998-2003 Cree, Inc. All Rights Reserved.
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G•SiC® Technology
SuperBlue™ LED
C430-CB290-E1000
Maximum Ratings at TA = 25°C
Notes 1&3
C430-CB290-E1000
DC Forward Current 30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 70 mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -20°C to +80°C
Storage Temperature Range -30°C to +100°C
Electrostatic Discharge Threshold (HBM)
Note 2
1000 V
Electrostatic Discharge Classification (MIL-STD-883C)
Note 2
Class 2
Electrical/Optical Characteristics at TA = 25°C
Note 3
If = 20 mA C430-CB290-E1000
Symbol (units) Description Min. Typ. Max.
Vf (V) Forward Voltage 4.0 4.3
P (µW) Radiant Flux 850 1150
I (µA) Reverse Current (Vr = 5V) 10
Iv (mcd) Chip Luminous Intensity 6.0
λp (nm) Peak Wavelength 426 428 430
λd (nm) Dominant Wavelength 462 465 466
λ∆ (nm) Halfwidth 65
τ (ns) Optical Rise Time 30
Mechanical Specifications
Note 4
C430-CB290-E1000
Description Dimension Tolerance
P-N Junction Area (µm) 240 x 240 ± 25
Bottom Area (µm) 275 x 275 ± 25
Chip Thickness (µm) 250 ± 25
Au Bond Pad Diameter (µm) 114 ± 20
Au Bond Pad Thickness (µm) 1.2 ± 0.5
Back Contact Metal Width (µm) 19.8 -5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization.
Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not
limited by the G •SiC die but by the effect of the LED junction temperature on the package. Please refer to figures 5 and 9 for specific derating curves. The
junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 350°C (< 15 minutes).
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures
are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA
within the maximum ratings shown above. Efficiency decreases at higher currents; please refer to Fig 3 and 7 for specific efficiency curves. Typical values
given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances Products shipped will
exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics were
measured in a Photoresearch Spectrascan Integrating Sphere, Luminance A.
4) All Products conform to the listed mechanical specifications within the tolerances shown.
CPR3L Rev. H
© 1998-2003 Cree, Inc. All Rights Reserved.
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