Page 1
BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6
28.5
min
Ø 12.75
Rändel 0.8
knurl 0.8
Ø
±0.1
11
1.3
10.7
±0.2
5
±0.2
Ø
±01
13
BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2011-11-18
Nominal Current
60 A
Nennstrom
Repetitive peak reverse voltage
50 ... 600 V
Periodische Spitzensperrspannung
Metal press-fit case with plastic cover
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
10 g
Gewicht ca.
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Standard packaging: bulk
Dimensions - Maße [mm]
Standard Lieferform: lose im Karton
Maximum ratings Grenzwerte
Type / Typ
Wire to / Draht an
Anode Cathode
Repetive peak reverse voltage
Periodische Spitzensperrspannung
V
[V]
RRM
Surge peak reverse voltage
Stoßspitzensperrspannung
V
[V]
RSM
BYP60A05 BYP60K05 50 60
BYP60A1 BYP60K1 100 120
BYP60A2 BYP60K2 200 240
BYP60A3 BYP60K3 300 360
BYP60A4 BYP60K4 400 480
BYP60A6 BYP60K6 600 700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 150°C I
f > 15 Hz I
TA = 25°C I
FAV
FRM
FSM
60 A
190 A 1)
450/500 A
TA = 25°C i2t 1000 A2s
T
j
T
S
-50...+215°C
-50...+215°C
1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG http://www.diotec.com/ 1
Page 2
BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
[°C]
T
C
150100
50
0 200
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
10
10
10
3
2
[A]
î
F
1 10 10 [n] 10
2 3
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
VF0.8
1.0
1.2
1.4
[V] 1.8
10
10
10
1
10
3
2
-1
[A]
I
F
T = 25°C
j
T = 125°C
j
450a-(60a-1,1v )
Characteristics Kennwerte
Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 60 A V
Leakage Current – Sperrstrom Tj = 25°C VR = V
Thermal Resistance Junction – Case
RRM
R
Wärmewiderstand Sperrschicht – Gehäuse
Maximum pressing force
F
Maximaler Einpressdruck
F
I
R
thC
pmax
< 1.1 V
< 100 µA
< 0.6 K/W
7 kN
© Diotec Semiconductor AG http://www.diotec.com/ 2
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