Average rectified output current square wave-10A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 92 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;-10A
per diodeThs ≤ 92 ˚C
Non-repetitive peak forwardt = 10 ms-50A
current per diodet = 8.3 ms-55A
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001-0.2A
per diode
Non-repetitive peak reversetp = 100 µs-0.2A
current per diode
Storage temperature-40150˚C
Operating junction temperature-150˚C
October 19981Rev 1.300
Page 2
Philips SemiconductorsProduct specification
Rectifier diodesBYQ28F, BYQ28EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
C
Electrostatic dischargeHuman body model;-8kV
capacitor voltageC = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETERCONDITIONSMIN.TYP. MAX. UNIT
V
isol
Peak isolation voltage fromSOT186 package; R.H. ≤ 65%; clean and--1500V
all terminals to externaldustfree
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;--2500V
all terminals to externalsinusoidal waveform; R.H. ≤ 65%; clean
heatsinkand dustfree
C
isol
Capacitance from pin 2 tof = 1 MHz-10-pF
external heatsink
Rectifier diodesBYQ28F, BYQ28EX series
ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
100%
rrm
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I= 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
8
Vo = 0.748 V
Rs = 0.0293 Ohms
7
6
5
4
3
2
1
0
012345678
0.1
BYQ28
0.2
IF(AV) / A
rr2
Ths(max) / C
D = 1.0
0.5
t
D =
p
T
t
t
p
I
T
Fig.5. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
F(AV)
104.4
110.1
115.8
121.5
127.2
132.9
138.6
144.3
150
) per
a = 1.57
F(AV)
Ths(max) / C
.
F(AV)
115.8
121.5
127.2
132.9
138.6
144.3
150
) per
R
Voltage Pulse Source
Current
shunt
Fig.3. Circuit schematic for t
D.U.T.
to ’scope
rr2
PF / W
6
Vo = 0.748 V
Rs = 0.0293 Ohms
5
4
3
2
1
0
0123456
BYQ28
1.9
2.2
2.8
4
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(I
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
October 19983Rev 1.300
Page 4
Philips SemiconductorsProduct specification
Rectifier diodesBYQ28F, BYQ28EX series
ultrafast, rugged
trr / ns
1000
100
10
1
110
dIF/dt (A/us)
IF=5A
IF=1A
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
1
IF=5A
100
Qs / nC
100
IF=5A
IF=2A
10
1.0
0.1
1.010100
IF=1A
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
0.1
0.01
1
Fig.8. Maximum I
IF / A
15
Tj=150C
Tj=25C
10
5
0
01
-dIF/dt (A/us)
at Tj = 25 ˚C; per diode
rrm
typ
0.5
VF / V
IF=1A
10100
BYQ28
max
1.5
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
p
p
t
0.01
0.001
1us10us 100us 1ms10ms 100ms1s10s
P
D
pulse width, tp (s)
T
t
D =
T
t
BYQ28F/EX
Fig.11. Transient thermal impedance; per diode;
Z
= f(tp).
th j-hs
October 19984Rev 1.300
Page 5
Philips SemiconductorsProduct specification
Rectifier diodesBYQ28F, BYQ28EX series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.5 max
not tinned
10.2
max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5
min
4.4
max
2.9 max
7.9
7.5
17
max
123
M
0.4
5.08
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
2.54
top view
0.55 max
1.3
October 19985Rev 1.300
Page 6
Philips SemiconductorsProduct specification
Rectifier diodesBYQ28F, BYQ28EX series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 19986Rev 1.300
Page 7
Philips SemiconductorsProduct specification
Rectifier diodesBYQ28F, BYQ28EX series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 19987Rev 1.300
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