Page 1
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
BUZ 104L
• 175 °C operating temperature
• also in TO-220 SMD available
Type
V
DS
I
D
R
DS(on)
Package Ordering Code
Pin 1 Pin 2 Pin 3
G D S
BUZ 104L 50 V 17.5 A 0.1 Ω TO-220 AB C67078-S1358-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 29 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche energy, single pulse
I
D
I
Dpuls
E
AS
A
17.5
70
mJ
I
= 17.5 A,
D
L
= 114 µH,
Reverse diode dv/d
I
= 17.5 A,
S
T
= 175 °C
jmax
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
= 25 °C
C
Semiconductor Group 1 07/96
V
= 25 V,
DD
T
= 25 °C
j
V
= 40 V, d
DS
R
= 25 Ω
GS
35
t
i
/dt = 200 A/µs
F
dv/d
t
kV/µs
6
V
V
P
GS
gs
tot
±
14 V
±
20
W
60
Page 2
BUZ 104L
Maximum Ratings
Parameter Symbol Values Unit
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
T
T
R
R
j
stg
thJC
thJA
-55 ... + 175 °C
-55 ... + 175
≤ 2.5 K/W
≤
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
V
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= -40 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 50 V,
= 50 V,
= 50 V,
V
V
V
GS
GS
GS
= 0 V,
= 0 V,
= 0 V,
T
= 25 °C
j
T
= -40 °C
j
T
= 150 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-resistance
V
= 5 V,
GS
I
= 8.5 A
D
V
GS(th)
I
DSS
I
GSS
R
DS(on)
50 - -
1.2 1.6 2
-
-
-
0.1
1
10
1 µA
100
100
- 10 100
- 0.085 0.1
nA
µA
nA
Ω
Semiconductor Group 2 07/96
Page 3
BUZ 104L
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 8.5 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
= 5 V,
GS
I
= 3 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
5 9.2 -
pF
- 420 560
- 140 210
- 60 90
ns
R
GS
= 50
Ω
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
= 3 A
D
I
= 3 A
D
I
= 3 A
D
t
r
t
d(off)
t
f
- 12 18
- 50 75
- 70 95
- 50 65
Semiconductor Group 3 07/96
Page 4
BUZ 104L
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
Inverse diode direct current,pulsed
T
= 25 °C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 35 A
F
Reverse recovery time
V
= 30 V,
R
I
l
d
i
=
F
/dt = 100 A/µs
S,
F
Reverse recovery charge
V
= 30 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
I
I
V
t
Q
S
SM
SD
rr
rr
A
- - 17.5
- - 70
V
- 1.15 1.8
ns
- 55 nC
- 25 -
Semiconductor Group 4 07/96
Page 5
BUZ 104L
Power dissipation
P
= ƒ(
T
tot
P
tot
)
C
65
W
55
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
C
)
C
≥
GS
5 V
T
C
V
18
A
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 °C 180
Safe operating area
I
= ƒ(
V
10
10
10
A
)
DS
D
= 0
2
R
1
0
0
10
=
DS(on)
, T
V
DS
C
D
I
/
D
parameter:
I
D
= 25°C
1
10
t
= 20.0µs
p
DC
100 µs
1 ms
10 ms
V
V
10
DS
Transient thermal impedance
Z
= ƒ(
t
th JC
parameter:
10
K/W
Z
thJC
10
10
10
2
10
)
p
D = t
/
T
p
1
0
-1
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
-2
-1
10
10 0 s
t
p
-2
single pulse
-3
-7
-6
-5
-4
10
10
10
10
10
-3
Semiconductor Group 5 07/96
Page 6
BUZ 104L
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs
p
40
P
= 60W
tot
A
32
28
24
20
16
12
8
4
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 V 7.5
l
k
j
i
g
e
c
a
V
GS
a 2.0
b 2.5
h
c 3.0
d 3.5
e 4.0
f 4.5
g 5.0
f
h 5.5
i 6.0
j 7.0
k 8.0
l 10.0
d
b
V
DS
[V]
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
0.28
= 8.5 A,
D
V
GS
= 5 V
Ω
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-60 -20 20 60 100 °C 180
98%
typ
T
j
Typ. transfer characteristics
parameter:
≥
V
2 x
DS
I
D
t
= 80 µs
p
x
R
ID
40
A
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
DS(on)max
I
D
= f (
V
)
GS
V
GS
Typ. forward transconductance
parameter:
≥
V
2 x
DS
g
fs
t
= 80 µs,
p
ID x R
10
S
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 A 35
DS(on)max
g
=
f
(
I
fs
)
D
I
D
Semiconductor Group 6 07/96
Page 7
BUZ 104L
Typ. drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
ƒ(
=
I
)
D
V
GS
0.32
a
b
c
d
e
Ω
0.24
0.20
0.16
0.12
0.08
V
V
V
[V] =
[V] =
[V] =
GS
GS
GS
0.04
a
a
a
b
c
d
e
f
g
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.00
0 4 8 12 16 20 24 28 32 A 38
5.5
6.0
7.0
h
8.0
Gate threshold voltage
V
parameter:
f
g
V
GS(th)
h
i
j
i
j
10.0
I
D
GS (th)
= ƒ(
T
)
j
V
=
V
,
I
GS
4.6
V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20 20 60 100 °C 180
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
= 0V, f = 1MHz
GS
4
10
pF
3
10
2
10
1
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
2
10
A
1
10
0
10
= 25 °C typ
T
j
= 175 °C typ
T
j
= 25 °C (98%)
T
j
T
= 175 °C (98%)
j
-1
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Semiconductor Group 7 07/96
Page 8
BUZ 104L
Avalanche energy
parameter:
R
= 25 Ω, L = 114 µH
GS
E
AS
I
= 17.5 A,
D
36
mJ
28
24
20
16
12
8
4
0
20 40 60 80 100 120 140 °C 180
E
= ƒ(
T
AS
V
= 25 V
DD
)
j
T
j
Typ. gate charge
V
= ƒ(
Q
GS
parameter:
16
V
V
GS
12
10
8
6
4
2
0
)
Gate
I
= 26 A
D puls
0 4 8 12 16 nC 24
0,2
V
DS max
0,8
V
DS max
Q
Gate
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
62
V
60
59
58
57
56
55
54
53
52
51
50
49
48
47
-60 -20 20 60 100 °C 180
T
j
Semiconductor Group 8 07/96
Page 9
Package Outlines
BUZ 104L
TO-220 AB
Dimension in mm
Semiconductor Group 9 07/96
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