Datasheet BUZ103SL Datasheet (Siemens)

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Logic Level

• Avalanche-rated

• dv/dt rated

• 175°C operating temperature

BUZ 103 SL

SPP28N05L

• also in SMD available

Pin 1 Pin 2 Pin 3

G D S

Type

V

DS

I

D

R

DS(on

BUZ 103 SL 55 V 28 A 0.05

)

Ω

Package Ordering Code

TO-220 AB Q67040-S4008-A2

Maximum Ratings Parameter Symbol Values Unit

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= 28 A, VDD = 25 V, RGS = 25

D

L = 357 µH, T

= 25 °C

j

Avalanche current,limited by T

Ω

jmax

Avalanche energy,periodic limited by T Reverse diode dv/dt

jmax

I

D

I

Dpuls

E

AS

I

AR

E

AR

dv/dt

A 28 20

112

mJ

140

28 A

7.5 mJ

kV/µs

I

= 28 A, VDS = 40 V, diF/dt = 200 A/µs

S

T

= 175 °C

jmax

Gate source voltage V Power dissipation

T

= 25 °C

C

Semiconductor Group 1 30/Jan/1998

GS

P

tot

6

±

14 V

75

W

BUZ 103 SL

SPP28N05L

Maximum Ratings Parameter Symbol Values Unit

Operating temperature T Storage temperature T Thermal resistance, junction - case R Thermal resistance, junction - ambient R

j stg

thJC thJA

-55 ... + 175 °C

-55 ... + 175

≤

2 K/W

≤

62

IEC climatic category, DIN IEC 68-1 55 / 175 / 56

Electrical Characteristics,

Parameter Symbol Values Unit

Static Characteristics

Drain- source breakdown voltage

V

= 0 V, ID = 0.25 mA, Tj = 25 °C

GS

Gate threshold voltage

V

GS=VDS, ID

= 50 µA

Zero gate voltage drain current

V

= 50 V, VGS = 0 V, Tj = -40 °C

DS

V

= 50 V, VGS = 0 V, Tj = 25 °C

DS

V

= 50 V, VGS = 0 V, Tj = 150 °C

DS

Gate-source leakage current

V

= 20 V, VDS = 0 V

GS

Drain-Source on-resistance

V

= 4.5 V, ID = 20 A

GS

V

= 10 V, ID = 20 A

GS

at Tj = 25°C, unless otherwise specified

min. typ. max.

V

(BR)DSS

55 - -

V

GS(th)

1.2 1.6 2

I

DSS

-

I

GSS

- 10 100

R

DS(on)

-

0.1

-

0.04

0.025

V

µA

0.1 1 100

nA

Ω

0.05

0.03

Semiconductor Group 2 30/Jan/1998

BUZ 103 SL

SPP28N05L

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

* ID * RDS(on)max, ID

= 20 A

Input capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Output capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Reverse transfer capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Turn-on delay time

V

= 30 V, VGS = 4.5 V, ID = 28 A

DD

= 6.8

Ω

R

G

Rise time

V

= 30 V, VGS = 4.5 V, ID = 28 A

DD

= 6.8

Ω

R

G

Turn-off delay time

V

= 30 V, VGS = 4.5 V, ID = 28 A

DD

= 6.8

Ω

R

G

Fall time

V

= 30 V, VGS = 4.5 V, ID = 28 A

DD

= 6.8

Ω

R

G

Gate charge at threshold

V

= 40 V, ID = 0.1 A, VGS =0 to 1 V

DD

Gate charge at 5.0 V

V

= 40 V, ID = 28 A, VGS =0 to 5 V

DD

Gate charge total

V

= 40 V, ID = 28 A, VGS =0 to 10 V

DD

Gate plateau voltage

V

= 40 V, ID = 28 A

DD

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g(th)

Q

g(5)

Q

g(total)

V

(plateau)

S

10 - -

pF

- 770 960

- 230 300

- 130 165 ns

- 10 15

- 75 115

- 30 45

- 20 30 nC

- 1 1.5

- 20 30

- 32 50 V

- 4 -

Semiconductor Group 3 30/Jan/1998

BUZ 103 SL

SPP28N05L

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V, IF = 56 A

GS

Reverse recovery time

V

= 30 V, I

R

F=lS, diF

/dt = 100 A/µs

Reverse recovery charge

V

= 30 V, I

R

F=lS, diF

/dt = 100 A/µs

I

V

t

Q

S

SM

SD

rr

A

- - 28

- - 112 V

- 1.1 1.8 ns

- 60 90

rr

µC

- 0.15 0.25

Semiconductor Group 4 30/Jan/1998

BUZ 103 SL

SPP28N05L

Power dissipation

P

= ƒ(TC)

tot

80

W

P

tot

60

50

40

30

20

10

0

0 20 40 60 80 100 120 140 °C 180

Drain current

ID = ƒ(TC)

parameter: V

30

A 26 24

I

D

22 20 18 16 14 12 10

8 6 4 2

0

0 20 40 60 80 100 120 140 °C 180

T

C

GS

≥

4 V

T

C

Safe operating area

ID = ƒ(VDS)

parameter: D = 0, TC = 25°C

3

10

A

I

D

2

10

DS(on)

R

1

0

10

=

I

D

/

DS

V

1

10

t

= 15.0µs

p

DC

100 µs

1 ms

10 ms

10

V

Transient thermal impedance

Z

= ƒ(tp)

th JC

parameter: D = tp / T

1

10

K/W

0

10

Z

thJC

-1

10

D = 0.50

-2

10

-3

10

single pulse

-4

2

V

DS

10

-7

-6

-5

-4

10

-3

10

0.20

0.10

0.05

0.02

0.01

-2

-1

10

10 0 s

t

p

Semiconductor Group 5 30/Jan/1998

BUZ 103 SL

SPP28N05L

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs , T

65

P

= 75W

tot

A

55

I

D

50 45 40 35 30 25 20 15 10

5 0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0

l

k

j

= 25 °C

j

h

i

g

VGS [V]

a 2.5

f

b 3.0 c 3.5 d 4.0

e e 4.5

f 5.0 g 5.5 h 6.0

d

i 6.5 j 7.0 k 8.0

c

l 10.0

b

a

V

DS

Typ. drain-source on-resistance

R

DS (on)

= ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0.16

R

DS (on)

a

Ω

0.12

0.10

0.08

0.06

0.04

V

[V] =

GS

0.02

a

b

2.5

3.0

0.00

3.5

0 10 20 30 40 A 55

4.0

b

c

d

4.5

5.0

c

e

f

g

6.0

6.5

h

5.5

d

7.0

e

f

g

h

i

j

k

i

j

k

8.0

10.0

I

D

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

V

≥

2 x

x R

ID

DS(on)max

60

A 50 45 40 35 30 25 20 15 10

5 0

0 1 2 3 4 5 6 7 8 V 10

I

DS

D

V

GS

Semiconductor Group

6 30/Jan/1998

BUZ 103 SL

SPP28N05L

Drain-source on-resistance

R

DS (on)

= ƒ(Tj)

parameter: ID = 20 A, VGS = 4.5 V

0.16

Ω

R

DS (on)

0.12

0.10

0.08

0.06

0.04

0.02

0.00

-60 -20 20 60 100 °C 180

98%

typ

Gate threshold voltage

V

GS(th)

= f (Tj)

parameter:VGS=VDS,ID = 50µA

3.0 V

2.6

2.4

V

GS(th)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-60 -20 20 60 100 140 V 200

T

j

max

typ

min

T

j

Typ. capacitances

C = f (V

DS

)

parameter:VGS = 0V, f = 1MHz

4

10

C

pF

3

10

2

10

0 5 10 15 20 25 30 V 40

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

3

10

A

I

F

2

10

C

iss

1

10

= 25 °C typ

T

j

= 175 °C typ

T

j

= 25 °C (98%)

C

oss

C

rss

10

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

DS

T

j

Tj = 175 °C (98%)

V

SD

Semiconductor Group 7 30/Jan/1998

BUZ 103 SL

SPP28N05L

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 28 A, VDD = 25 V RGS = 25 Ω, L = 357 µH

150

mJ 130 120

E

AS

110 100

90 80 70 60 50 40 30 20 10

0

20 40 60 80 100 120 140 °C 180

Typ. gate charge

VGS = ƒ(Q

parameter: I

16

V

GS

12

10

8

6

4

2

0

T

j

)

Gate

= 28 A

D puls

V

0,2

DS max

0 5 10 15 20 25 30 35 40 nC 50

0,8

V

DS max

Q

Gate

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

= ƒ(Tj)

65

V

61

59

57

55

53

51

49

-60 -20 20 60 100 °C 180

T

j

Semiconductor Group 8 30/Jan/1998