Datasheet BUK463-100A Datasheet (Philips)

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope suitable for surface mount Drain-source voltage 100 V
applications. V
The device is intended for use in I
Switched Mode Power Supplies P
(SMPS), motor control, welding, T
DC/DC and AC/DC converters, and in R
general purpose switching

DS

D

tot
j

DS(ON)

applications.

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Drain current (DC) 14 A
Total power dissipation 75 W
Junction temperature 175 ˚C
Drain-source on-state 0.16 Ω
resistance

PIN DESCRIPTION

mb

d

1 gate
2 drain
3 source

mb drain

2

13

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T
T

DS
DGR

GS

tot
stg
j

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 30 V
Drain current (DC) Tmb = 25 ˚C - 14 A
Drain current (DC) Tmb = 100 ˚C - 10 A
Drain current (pulse peak value) Tmb = 25 ˚C - 56 A
Total power dissipation Tmb = 25 ˚C - 75 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 2 K/W
mounting base
Thermal resistance junction to minimum footprint - 50 - K/W
ambient FR4 board (see fig. 18)

February 1996 1 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 5 A - 0.15 0.16 Ω
resistance

Forward transconductance VDS = 25 V; ID = 5 A 4.0 5.5 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 660 825 pF

Output capacitance - 140 200 pF
Feedback capacitance - 60 100 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 10 20 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
Turn-off delay time R
Turn-off fall time - 40 55 ns

= 50 Ω - 6090ns

gen

Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die

Internal source inductance Measured from source lead - 7.5 - nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 14 A
current
Pulsed reverse drain current - - - 56 A
Diode forward voltage IF = 14 A ; VGS = 0 V - 1.2 1.5 V

Reverse recovery time IF = 14 A; -dIF/dt = 100 A/µs; - 90 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.6 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 14 A ; VDD ≤ 50 V ; - - 70 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy

February 1996 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-mb / (K/W)

1E+01

1E+00

1E-01

1E-02

0.5

0.2

0.1

0.05

t / s

P

D

0.02

0

1E-07 1E-05 1E-03 1E-01 1E+01

ZTHX53

p

t

p

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

28
24
20
16
12

8
4
0

0 2 4 6 8 10

VGS / V =

20

15

VDS / V

BUK453-100A

10

8

7

6

5

4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

100

10

1

0.1

RDS(ON) = VDS/ID

1 100

10

A

DC

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

BUK453-100

tp = 10 us

100 us

1 ms
10 ms

100 ms

VGS / V =

7

BUK453-100A

7.5
8

10

20

GS

.

RDS(ON) / Ohm

1.0

0.8

0.6

0.4

0.2

0

5 5.5 6

4.5

0 4 8 12 16 20 24 28

6.5

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

February 1996 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

ID / A

28
24
20
16
12

8
4
0

0 2 4 6 8 10

Tj / C = 25

VGS / V

BUK453-100A

150

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

gfs / S

7
6
5
4
3
2
1
0

0 4 8 12 16 20 24 28

ID / A

Fig.8. Typical transconductance, Tj = 25 ˚C

BUK453-100A

.

gfs = f(ID); conditions: VDS = 25 V

VGS(TO) / V

4

3

2

1

0

-60 -20 20 60 100 140 180

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage.

V

j

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

0 1 2 3 4

SUB-THRESHOLD CONDUCTION

2 %

typ

VGS / V

GS

98 %

Fig.11. Sub-threshold drain current.

ID = f(V

; conditions: Tj = 25 ˚C; VDS = V

GS)

GS

a

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

-60 -20 20 60 100 140 180

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

Normalised RDS(ON) = f(Tj)

Tj / C

= f(Tj); ID = 5 A; VGS = 10 V

C / pF

10000

1000

100

10

0 20 40

VDS / V

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

BUK4y3-100

, C

iss

oss

Ciss

Coss
Crss

, C

rss

.

February 1996 4 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

VGS / V

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14 16

QG / nC

BUK453-100

VDS / V =20

80

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 14 A; parameter V

GS

IF / A

30

20

10

Tj / C = 150 25

0

0 1 2

VSDS / V

BUK453-100A

DS

Fig.14. Typical reverse diode current.

IF = f(V

); conditions: V

SDS

= 0 V; parameter T

GS

j

WDSS%

120
110
100

90
80
70
60
50
40
30
20
10

0

20 40 60 80 100 120 140 160 180

Tmb / C

Fig.15. Normalised avalanche energy rating.

W

% = f(Tmb); conditions: ID = 14 A

DSS

+

L

VDS

VGS

DSS

T.U.T.

/(BV

0

RGS

Fig.16. Avalanche energy test circuit.

W

= 0.5 ⋅LI

DSS

2

D

⋅ BV

DSS−VDD

-

R 01

shunt

)

VDD

-ID/100

February 1996 5 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g

2.54 (x2)

MOUNTING INSTRUCTIONS

Dimensions in mm

10.3 max

11 max

15.4

0.85 max
(x2)

4.5 max

1.4 max

0.5

Fig.17. SOT404 : centre pin connected to mounting base.

11.5

2.5

9.0

17.5

2.0

3.8

5.08

Fig.18. SOT404 : soldering pattern for surface mounting

.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

February 1996 6 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

February 1996 7 Rev 1.000