Page 1
MEDIUM VOLTAGE NPN IGNITION DARLINGTON
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN DARLINGTON
■ LOW BASE-DRIVE REQUIREMENTS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
■ SOLENOID / RELAY DRIVERS
■ MOTOR CONTROL
■ ELECTRONIC AUTO M OT IV E IGNI TION
BU911
3
2
1
DESCRIPTION
The BU911 is an NPN transistor in monolithic
TO-220
Darlington configuration Jedec TO-220 plastic
package, designed for applications such as
electronic ignition, DC and AC motor controls,
solenoid drivers, etc.
INTERNAL SCHEMATIC DIAGRAM
R1 = 1.7 kΩ R2 = 50 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Emitter Voltage (VBE = 0)
CES
Collector-Emitter Voltage (IB = 0)
CEO
Emitter-Base Voltage (IC = 0)
EBO
I
Collector Current
C
Collector Peak Current
CM
I
Base Current
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
450 V
400 V
5V
6A
10 A
1A
60 W
-65 to 150
150
o
C
o
C
June 1997
1/4
Page 2
BU911
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.08
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off Current
(V
= 0)
BE
Collector Cut-off Current
(I
= 0)
B
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-emitter
Sustaining Voltage (I
∗
Collector-emitter
= 0)
B
Saturation Voltage
V
BE(sat)
∗
Base-emitter Saturation
Voltage
V
∗
Diode Forward Voltage I
F
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
=450 V
V
CE
V
=450 V T
CE
= 400 V
V
CE
= 5 V
V
EB
= 100 mA
I
C
= 2.5 A IB = 50 mA
I
C
I
= 4 A IB = 200 mA
C
= 2.5 A IB = 50 mA
I
C
I
= 4 A IB = 200 mA
C
= 4 A
F
= 125oC
case
400 V
1
5
1mA
5mA
1.8
1.8
2.2
2.5
2.5 V
mA
mA
V
V
V
V
2/4
Page 3
P011C
TO-220 MECHANICAL DATA
BU911
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
3/4
Page 4
BU911
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroele cton ics.
© 1997 SGS-THOMSON Microelectronics - Printed in Ita ly - All Rig hts Rese rved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
4/4
Loading...