Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily
for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
Collector saturation current f = 16kHz 4.5 - A
Diode forward voltage IF = 4.5 A 1.6 2.0 V
Fall time I
= 4.5 A; f = 16kHz 0.7 - µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
2
1
3
e
July 1998 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
V
CEOsust
V
CEsat
V
BEsat
h
FE
V
F
Collector cut-off current
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 2 A - - 1.1 V
DC current gain IC = 100 mA; VCE = 5 V 6 13 30
Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
f
T
C
C
t
s
t
f
Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
Collector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line I
deflection circuit) I
Turn-off storage time 6.5 - µs
Turn-off fall time 0.7 - µs
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
= 4.5 A;Lc= 1 mH;Cfb = 4 nF
Csat
= 1.4 A; LB = 6 µH; -VBB = -4 V;
B(end)
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
IC
IB
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
ts
IBend
tf
ICsat
IBend
ICsat
90 %
10 %
+ 150 v nominal
adjust for ICsat
t
1mH
t
D.U.T.
IBend
t
-VBB
LB
12nF
Fig.3. Switching times test circuit
h
100
FE
BU508AD
t
10
t
1
- IBM
Fig.2. Switching times definitions.
July 1998 3 Rev 1.200
0.1 1 10
IC/A
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
CE
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
VCESAT / V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10
BU508AD
IC / A
Fig.5. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
VBESAT / V
1.4
1.2
IC = 6A
1
IC = 4.5A
IC = 3A
0.8
0.6
01234
B
BU508AD
IB / A
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
C
Zth K/W
10
1
0.5
0.2
0.1
0.1
0.05
0.02
t
0.01
0
0.001
1.0E-07 1.0E-5 1.0E-3 1.0E-1 1.0E+1
t / s
P
D
bu508aw
t
p
D =
p
T
t
T
Fig.8. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.9. Normalised power dissipation.
PD% = 100⋅PD/P
D 25˚C
= f (Ths)
VCESAT/V
10
1
0.1
0.1 1 10
IB/A
BU508AD
IC = 6A
IC = 4.5A
IC = 3A
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter I
C
July 1998 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
Fig.10. Forward bias safe operating area. Ths < 25˚C
(1)
P
(2)
Second-breakdown limits (independent of
tot max
line.
temperature).
I
Region of permissible DC operation.
II
Permissible extension for repetitive pulse
operation.
July 1998 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
21
max
15.5
min
3.5
4.0
max
2.2 max
3.2 max
16 max
5.3
15.5
max
1
2
5.45
3
1.1
5.45
7.3
seating
plane
0.4
5.3 max
1.8
o
2.5
0.9 max
M
Fig.11. SOT429; pin 2 connected to mounting base.
3.5
max
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
July 1998 6 Rev 1.200
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998 7 Rev 1.200
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