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BU208D
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPES
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISEDISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
■ JEDEC TO-3METAL CASE
■ NPNTRANSISTORWITH INTEGRATED
FREEWHEELINGDIODE
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV
DESCRIPTION
The BU208D and BU508DFI are manufactured
using Multiepitaxial Mesa technology for
cost-effectivehigh performance and use a Hollow
Emitter structure to enhanceswitching speeds.
BU508DFI
NPN POWER TRANSISTORS
1
2
TO-3 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
1
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
November 1999
Collect or-Emit t e r Voltage (VBE= 0 ) 1500 V
CES
Collect or-Emit t e r Voltage (IB=0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current (tp<5ms) 15 A
CM
TO - 3 ISOWATT218
Tot al Dissipation at Tc=25oC 150 50 W
tot
Storage Temperature -65 to 175 -65 to 150
stg
Max. Ope r ating Junc t io n T emperature 175 150
T
j
o
C
o
C
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BU208D / BU508DFI
THERMAL DATA
R
thj-case
Ther mal Resist ance Junction-c a s e Max 1 2.5
TO-3 ISOWATT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Current
(I
=0)
C
∗ Co llector-Emitt er
V
= 1500 V
CE
= 1500 V Tj=125oC
V
CE
=5V 300 mA
V
EB
I
= 10 0 m A 700 V
C
1
2
Sust aining V o lt age
=0)
(I
B
V
∗ Collec t or -Emitt er
CE(sat)
IC=4.5A IB=2A 1 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=4.5A IB=2A 1.3 V
Saturation Voltage
INDUCTIV E LOAD
t
V
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Ti me
s
t
Fall Time
f
Diode Forward Voltage IF=4A 2 V
F
Tr ansition F requency IC=0.1A VCE= 5 V f = 5 MHz 7 MHz
T
IC=4.5A hFE=2.5 VCC=140V
=0.9mH LB=3µH
L
C
7
550
mA
mA
µs
ns
Safe Operating Area (TO-3) Safe OperatingArea (ISOWATT218)
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BU208D / BU508DFI
DCCurrent Gain
Base Emitter Saturation Voltage
Collector EmitterSaturation Voltage
SwitchingTime InductiveLoad
SwitchingTime InductiveLoad (see figure 1)
SwitchingTime Percentancevs. Case
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BU208D / BU508DFI
Figure1: Inductive Load Switching TestCircuit.
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TO-3 MECHANICAL DATA
BU208D / BU508DFI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
P
G
U
V
N
O
R
B
DA
C
E
P003F
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BU208D / BU508DFI
ISOWATT218MECHANICAL DATA
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight: 4.9g (typ.)
- MaximumTorque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- Theside of thedissipator must beflatwithin 80 µm
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P025C/A
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BU208D / BU508DFI
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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