Datasheet BU505F, BU505DF Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BU505F; BU505DF

Silicon diffused power transistors

Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.

2

2

APPLICATIONS

• Horizontal deflection circuits of
colour television receivers.

PINNING

123

1

MBB008

3

a. BU505F. b. BU505DF.

1

MBB077

3

PIN DESCRIPTION

1 base

Front view

MBC668

2 collector
3 emitter

mb mounting base; electrically

Fig.1 Simplified outline (SOT186) and symbols.

isolated from all pins

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

V

CEsat

collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector-emitter saturation

IC= 2 A; IB= 900 mA; see Fig.8 − 1V

voltage

V

F

diode forward voltage

IF=2A − 1.8 V

(BU505DF)

I

Csat

I

C

I

CM

P

tot

t

f

collector saturation current − 2A
collector current (DC) see Figs 4 and 5 − 2.5 A
collector current (peak value) see Figs 4 and 5 − 4A
total power dissipation Th≤ 25 °C; see Fig.2 − 20 W
fall time inductive load; see Fig.10 0.7 −µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to external heatsink note 1 6.35 K/W

note 2 3.85 K/W

R

th j-a

thermal resistance from junction to ambient 55 K/W

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V

isolM

C

isol

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF

collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector saturation current − 2A
collector current (DC) see Figs 4 and 5 − 2.5 A
collector current (peak value) see Figs 4 and 5 − 4A
base current (DC) − 2A
base current (peak value) − 4A
total power dissipation Th≤ 25 °C; see Fig.2 − 20 W
storage temperature −65 +150 °C
junction temperature − 150 °C

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

Fig.2 Power derating curve.

MGK674

o

T

(

C)

h

2

10

handbook, halfpage

h

FE

10

1

−2

10

Tj=25°C.
(1) VCE=5V.
(2) VCE=1V.

Fig.3 DC current gain; typical values.

MGB875

(1)

(2)

−1

10

1

IC (A)

10

1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

V

CEsat

V

BEsat

V

F

I

CES

I

EBO

h

FE

f

T

C

c

collector-emitter sustaining voltage IC= 0.1 A; IB= 0; L = 25 mH;

see Figs 6 and 7

collector-emitter saturation voltage IC= 2 A; IB= 900 mA;

see Fig.8

base-emitter saturation voltage IC= 2 A; IB= 900 mA;

see Fig.9
diode forward voltage (BU505DF) IF=2A −−1.8 V
collector-emitter cut-off current VCE=V

CESmax

; VBE=0;

note 1

V

CE=VCESmax

; VBE=0;

Tj= 125 °C; note 1
emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain see Fig.3

V

= 5 V; IC= 2 A 2.22 −−

CE

= 5 V; IC= 100 mA 6 13 30

V

CE

transition frequency VCE=5V; IC= 100 mA;

f = 1 MHz
collector capacitance VCB=10V; IE=ie=0;

f = 1 MHz

700 −−V

−−1V

−−1.3 V

−−0.15 mA

−−1mA

− 7 − MHz

− 65 − pF

Switching times in horizontal deflection circuit (see Fig.4)
t

s

storage time ICM= 2 A; I

Vdr= −4V

L

=10µH − 6.5 −µs

B

=15µH − 7.5 −µs

L

B

L

=25µH − 9.5 −µs

B

t

f

fall time ICM= 2 A; I

Vdr= −4V

L

=10µH − 0.9 −µs

B

=15µH − 0.9 −µs

L

B

L

=25µH − 0.85 −µs

B

Note

1. Measured with a half-sinewave voltage (curve tracer).

B(end)

B(end)

= 900 mA;

= 900 mA;

1997 Aug 13 4

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

handbook, full pagewidth

10

10

(A)

2

10

I

C

10

I

CM max

I

C max

II

1

−1

−2

I

MGB931

−3

10

−4

10

110

Mounted without heatsink compound and 30±5 N force on centre of package.
Th=25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.

10

Fig.4 Forward bias SOAR.

1997 Aug 13 5

2

3

10

VCE (V)

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

handbook, full pagewidth

10

10

(A)

2

10

I

C

10

I

CM max

I

C max

II

1

−1

−2

I

MGB932

−3

10

−4

10

110

Mounted with heatsink compound and 30±5 N force on centre of package.
Th=25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.

10

Fig.5 Forward bias SOAR.

1997 Aug 13 6

2

3

10

VCE (V)

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

andbook, halfpage

30 to 60 Hz

Fig.6 Test circuit for collector-emitter

800

handbook, halfpage

V

CEsat

(mV)

600

100 to 200 Ω

L

300 Ω

6 V

sustaining voltage.

horizontal

oscilloscope

vertical

1 Ω

MGE252

+ 50 V

MGB889

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.7 Oscilloscope display for collector-emitter

sustaining voltage.

1.5

handbook, halfpage

V

BEsat

(V)

MGE239

VCE (V)

MGB882

400

200

0

−1

10

IC/IB= 2; Tj=25°C.

110

IC (A)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

1997 Aug 13 7

1

0.5

−1

10

IC/IB= 2; Tj=25°C.

110

IC (A)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

handbook, halfpage

i

C

i

B

Fig.10 Switching time waveforms.

I

Csat

MBH382

90%

10%

t

t

s

f

time

I

B (end)

time

1997 Aug 13 8

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

PACKAGE OUTLINE

Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186

E

E

1

P

D

1

D

m

q

A

A

1

L

1

b

L

2

c

0.55

0.38

1

17.0

16.4

1

D

23

b

e

e

1

D

1

7.9

10.2

7.5

9.6

REFERENCES

w M

0 5 10 mm

scale

E

5.7

5.3

e

1

2.54

E

e

5.08

1

14.3

13.5

L

DIMENSIONS (mm are the original dimensions)

A

A

b

UNIT

mm

Note

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

OUTLINE

VERSION

SOT186 TO-220

4.4

4.0

1

2.9

2.5

b

1

1.5

0.9

1.3

0.7

IEC JEDEC EIAJ

Q

c

(1)

L

1

4.8

4.0

m

L

2

3.2

0.9

10 0.4

3.0

0.5

EUROPEAN

PROJECTION

1.4

1.2

qQPL

w

4.4

4.0

ISSUE DATE

97-06-11

1997 Aug 13 9

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 13 10

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

NOTES

1997 Aug 13 11

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 13 Document order number: 9397 750 02709