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HIGH VOLTAGE NPN MULTIEPITAXIAL
FAST-SWITCHING TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ VERY HIGH SWITCHING SPEED
■ LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE P OW ER SUP P LIE S
DESCRIPTION
The BU505 is a high voltage NPN fastswitching
transistor designed to be used in lighting
application, like electronic ballas for fluorescent
lamps.
Its characteristics make it also ideal for power
supplies.
TO-220
BU505
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 1500 V
CES
Collector-Emitter Voltage (IB = 0) 700 V
CEO
I
Collector Current 2.5 A
C
Collector Peak Current (tp < 5 ms) 4 A
CM
I
Base Current 1 A
B
Base Peak Current (tp < 5 ms) 2 A
BM
Total Dissipation at Tc ≤ 25 oC75W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
July 1997
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BU505
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.67
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
Collector-emitter
= V
V
CE
VCE = V
V
CES
CES Tcase
= 5 V 1 mA
EB
= 125oC
0.151mA
IC = 100 mA L = 25mH 700 V
Sustaining Voltage
V
∗ Collector-emitter
CE(sat)
IC = 2 A IB = 0.9 A 5 V
Saturation Voltage
V
BE(sat)
∗ Base-emitter
IC = 2 A IB = 0.9 A 1.3 V
Saturation Voltage
I
s/b
Second Breakdown
VCE = 120 V t = 200 µs2 A
Current
t
Storage Time V
s
I
B1
R
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
= 250V IC = 2 A
Clamp
= 0.7 A V
= 0 L = 200µH
bb
be(off)
= -5V
2
350
mA
µs
ns
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E
TO-220 MECHANICAL DATA
BU505
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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BU505
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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