Datasheet BU4530AL Datasheet (Philips)

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

P

tot

V

CEsat

I

Csat

t

f

PINNING - SOT430 PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 10 A; IB = 2.22A - 3.0 V
Collector saturation current f = 32 kHz 9 - A

f = 90 kHz 8 - A

Fall time. I

= 9.0 A; f = 32 kHz 0.20 0.26 µs

Csat

I

= 8.0 A; f = 90 kHz 0.12 - µs

Csat

PIN DESCRIPTION

c

1 base
2 collector

b

3 emitter

heat collector

sink

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

C

I

CM

I

B

I

BM

P
T
T

CESM
CEO

tot
stg
j

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Base current (DC) - 10 A
Base current peak value - 15 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C

e

April 1999 1 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

BV

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 35 - K/W

Collector cut-off current

1

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

Base-emitter breakdown voltage IB = 1 mA 7.5 12.8 - V
Collector-emitter breakdown voltage IB = 0 A;IC = 100 mA; 800 V

L = 25 mH
Collector-emitter saturation voltage IC = 10 A; IB = 2.22 A - - 3.0 V
Base-emitter saturation voltage IC = 10 A; IB = 2.22 A 0.83 0.92 1.01 V
DC current gain IC = 1 A; VCE = 5 V - 12 -

IC = 10 A; VCE = 5 V 4.8 6.6 8.5

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

t

s

t

f

t

s

t

f

30-60 Hz

Switching times (32 kHz line I
deflection dynamic test circuit).
Turn-off storage time 3.0 4.0 µs
Turn-off fall time 0.20 0.26 µs

Switching times (90 kHz line I
deflection dynamic test circuit).
Turn-off storage time 2 - µs
Turn-off fall time 0.12 - µs

+ 50v

. Fig.2. Oscilloscope display for V

100R

6V

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

1R

CEOsust

= 9.0 A; IB1 = 1.8 A; (IB2 = -4.5 A)

Csat

= 8 A;IB1 = 1.6 A; (IB2 = -4.0 A)

Csat

IC / mA

250
200

100

0

VCE / V

min

VCEOsust

CEOsust

.

1 Measured with half sine-wave voltage (curve tracer).

April 1999 2 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

TRANSISTOR

IC

IB

VCE

DIODE

13us10us

32us

Fig.3. Switching times waveforms.

90 %

IC

10 %

IB

ts

IB1

tf

ICsat

ICsat

IBend

hFE

100

VCE = 1V

t

t

t

10

1

0.01 0.1 1 10 100

- - -Tj = 85 C
Tj = 25 C

IC / A

Fig.6. High and low DC current gain.

hFE

100

VCE = 5V

t

10

- - -Tj = 85 C
Tj = 25 C

IBend

-VBB

- IB2

Fig.4. Switching times definitions.

+ 150 v nominal
adjust for ICsat

Lc

LB

T.U.T.

Cfb

Fig.5. Switching times test circuit

t

1

0.01 0.1 1 10 100

IC / A

Fig.7. High and low DC current gain.

VBEsat /V

1

- - -Ths = 85 C
Ths = 25 C

0.9

0.8

0.7

0.6
01234

.

Fig.8. Typical base-emitter saturation voltage.

IC = 10 A

IC = 8 A

IB / A

April 1999 3 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

VCEsat / V

10

- - -Tj = 85 C
Tj = 25 C

1

0.1

0.01

0.1 1 10 100

IC / IB = 5

IC / A

Fig.9. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/I

B

10

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001
1E-07 1E-05 1E-03 1E-01 1E+01

t / s

P

D

Fig.12. Transient thermal impedance.

BU4530ALZth / (K/W)

t

t

p

D =

p

T

t

T

ts/tf / us

10

8

6

4

2

0

0 0.5 1 1.5 2 2.5 3

IB / A

Fig.10. Typical collector storage and fall time.

IC =9 A; Tj = 85˚C; f = 32kHz

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.11. Normalised power dissipation.

PD% = 100⋅PD/P

D 25˚C

Ic(sat) (A)

10

8

6

4

2

0

0 20406080100

Fig.13. I

during normal running vs. frequency of

Csat

operation for optimum performance

frequency (kHz)

April 1999 4 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

MECHANICAL DATA

Dimensions in mm
Net Mass: 9 g

25.5

26.5

22.53

22.63

19.5
min

2.39

18.16

20.5 max

4.06

2.99

2.09

3.1

3.53

3.13

3.23

2.45

3.5 max

6.17

8.53

5.3 max

3.0

3.0

4.06

1.92

seating

plane

0.8

1.35

0.4

M

5.45

Fig.14. SOT430; pin 2 connected to mounting base.

5.45

1.0 max

3.0 max

April 1999 5 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

April 1999 6 Rev 1.100