Page 1
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4523DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
V
t
C
CM
Csat
f
CESM
CEO
tot
CEsat
F
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 8 A; IB = 2 A - 3.0 V
Collector saturation current f = 16 kHz 8 - A
f = 70 kHz 6.5 - A
Diode forward voltage IF = 8.0 A - 2.2 V
Fall time I
= 8 A; f = 16 kHz 0.3 0.4 µs
Csat
f = 70 kHz t,b,f t.b.f µs
PINNING - SOT199 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
case
c
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Base current (DC) - 7 A
Base current peak value - 10 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
Rbe
e
-7A
1 Turn-off current.
July 1998 1 Rev 1.000
Page 2
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4523DF
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 12.5 - V
Base-emitter resistance VEB = 7.5 V - 46 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 8 A; IB = 2 A - - 3.0 V
Base-emitter saturation voltage IC = 8 A; IB = 2 A 0.85 0.95 1.1 V
DC current gain IC = 1 A; VCE = 5 V - t.b.f -
IC = 8 A; VCE = 5 V 4.2 5.8 7.3
Diode forward voltage IF = 8.0 A - 2.2 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit) (IB2 = -4 A)
t
s
t
f
Turn-off storage time 4.5 5.5 µs
Turn-off fall time 0.3 0.4 µs
Switching times (70 kHz line I
deflection circuit)
t
s
t
f
2 Measured with half sine-wave voltage (curve tracer).
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
July 1998 2 Rev 1.000
= 8.0 A;IB1 = 1.6 A
Csat
= t.b.f
Csat
Page 3
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4523DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
21.5
max
15.7
0.7
3.5
15.3 max
7.3
3.1
3.3
6.2
5.8
5.2 max
3.2
o
45
seating
plane
3.5 max
not tinned
min
12
2.1 max
5.45
Fig.1. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
1.2
1.0
5.45
3
0.7 max
M
0.4
2.0
July 1998 3 Rev 1.000
Page 4
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4523DF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998 4 Rev 1.000
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