Datasheet BU4522AX Datasheet (Philips)

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of colour TV receivers and PC monitors.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

P

tot

V

CEsat

I

Csat

t

f

PINNING - SOT399 PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A - 3.0 V
Collector saturation current (Fig 17) f = 16 kHz 7 - A

f = 64 kHz 6 - A

Fall time I

= 7 A; f = 16 kHz 285 400 ns

Csat

I

= 6 A; f = 64 kHz 170 230 ns

Csat

PIN DESCRIPTION

case

c

1 base
2 collector

b

3 emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

C

I

CM

I

B

I

BM

-I
P
T
T

CESM
CEO

BM
tot
stg
j

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current peak value

1

Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

123

e

-6A

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-hs

R

th j-a

1 Turn-off current.

Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W

December 1997 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

EBO

BV

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink

Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

Collector cut-off current

2

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V

L = 25 mH
Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A - - 3.0 V
Base-emitter saturation voltage IC = 7 A; IB = 1.75 A 0.85 0.94 1.03 V
DC current gain IC = 1 A; VCE = 5 V - 10 -

IC = 7 A; VCE = 5 V 4.2 5.8 7.3

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (16 kHz line f = 16 kHz; I
deflection circuit) (IB2 = -3.5 A)

t

s

t

f

Turn-off storage time 3.5 4.3 µs
Turn-off fall time 285 400 ns

Switching times (64 kHz line f = 64 kHz; I
deflection circuit) (IB2 = -3.6 A)

t

s

t

f

Turn-off storage time 2.3 2.7 µs
Turn-off fall time 170 230 ns

= 7 A; IB1 = 1.4 A;

Csat

= 6 A; IB1 = 1.2 A;

Csat

2 Measured with half sine-wave voltage (curve tracer).

December 1997 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

30-60 Hz

IC / mA

250
200

100

100R

6V

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

I

TRANSISTOR

C

DIODE

ICsat

t

I

B

IB1

t

6.5 us5 us

IB2

16 us

V

CE

t

Fig.4. Switching times waveforms (64 kHz).

ICsat

90 %

IC

10 %

IB

ts

IB1

tf

t

0

VCE / V

Fig.2. Oscilloscope display for V

TRANSISTOR

IC

IB

VCE

DIODE

26us20us

64us

min

VCEOsust

CEOsust

ICsat

IB1

IB2

.

t

t

t

Fig.3. Switching times waveforms (16 kHz).

IBend

-VBB

- IB2

Fig.5. Switching times definitions.

+ 150 v nominal
adjust for ICsat

Lc

LB

T.U.T.

Cfb

Fig.6. Switching times test circuit

t

.

December 1997 3 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

hFE

100

VCE = 1 V

10

1

0.01 0.1 1 10 100

BU4522AF/X

Ths = 25 C
Ths = 85 C

IC / A

Fig.7. High and low DC current gain.

100

hFE

VCE = 5 V

10

BU4522AF/X

Ths = 25 C
Ths = 85 C

VBEsat \ V

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6
01234

IC = 7 A

IC = 6 A

Ths = 25 C
Ths = 85 C

IB / A

Fig.10. Typical base-emitter saturation voltage.

ts/tf/ us

5

4

3

2

BU4522AF/X 16kHz

ICsat = 7 A
Ths = 85 C
Freq = 16 kHz

1

0.01 0.1 1 10 100

IC / A

Fig.8. High and low DC current gain.

VCEsat (V)

10

Ths = 25 C
Ths = 85 C

1

0.1

0.01

0.1 1 10 100

IC/IB = 5

BU4522AF/X

IC / A

Fig.9. Typical collector-emitter saturation voltage.

1

0

0

0.5 1 1.5 2

IBend / A

Fig.11. Typical collector storage and fall time.

IC =7 A; Tj = 85˚C; f = 16kHz

ts/tf/ us

5

4

3

2

1

0

0 0.5 1 1.5 2

BU4522AF/X 64kHz

ICsat = 6 A

Ths = 85 C

Freq = 64 kHz

IB / A

Fig.12. Typical collector storage and fall time.

IC = 6 A; Tj = 85˚C; f = 64 kHz

December 1997 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

120
110

PD%

Normalised Power Derating

with heatsink compound

100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Ths / C

Fig.13. Normalised power dissipation.

PD% = 100⋅PD/P

Zth / (K/W)

10

0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

0

0.001

1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E-01

t / s

D 25˚C

BU4522AF

p

t

p

P

D

t

D =

T

t

T

Fig.14. Transient thermal impedance.

30

IC / A

BU2522AF

20

10

0

0

500 1000 1500

VCE / V

Fig.16. Reverse bias safe operating area. Tj ≤ T

Ic(sat) (A)

10

9
8
7
6
5
4
3
2
1
0

0 20406080100

Fig.17. I

10 30 50 70 90

Csat

operation for optimum performance

Horizontal frequency (kHz)

during normal running vs. frequency of

jmax

VCC

LC

IBend

-VBB

LB

T.U.T.

VCL

CFB

Fig.15. Test Circuit RBSOA.

December 1997 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

MECHANICAL DATA

Dimensions in mm
Net Mass: 5.88 g

4.5

16.0 max

10.0

0.7

3.3

5.8 max

3.0

27

max

22.5
max

18.1
min

5.45 5.45

Fig.18. SOT399; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

25

25.1

25.7

5.1

2.2 max

4.5

1.1

0.4 M
2

0.95 max

3.3

December 1997 6 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4522AX

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

December 1997 7 Rev 1.000