Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 4 A; IB = 1.0 A - 3.0 V
Collector saturation current f = 16kHz 4 - A
Diode forward voltage IF = 4 A 1.7 2.1 V
Fall time I
= 4 A; f = 16kHz 300 400 ns
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-5A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
January 1999 1 Rev 1.000
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
V
CEOsust
BV
EBO
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
CESMmax
- - 1.0 mA
- - 2.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 6 V - 30 - Ω
Collector-emitter saturation voltages IC = 4 A; IB = 1.0 A - - 3.0 V
Base-emitter saturation voltage IC = 4 A; IB = 1.0 A 0.83 0.92 1.01 V
DC current gain IC = 500 mA; VCE = 5 V - 7 -
IC = 4 A; VCE = 5 V 4.2 5.7 7.3
Diode forward voltage IF = 4 A - 1.7 2.1 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit)
t
s
t
f
V
fr
Turn-off storage time 3.7 4.6 µs
Turn-off fall time 300 400 ns
Anti-parallel diode forward recovery IF = 4 A; dIF/dt = 50 A/µs 18.5 - V
voltage
t
fr
Anti-parallel diode forward recovery VF = 5 V 500 - ns
time
= 4 A; IB1 = 0.8 A;(IB2 = -2 A)
Csat
2 Measured with half sine-wave voltage (curve tracer).
January 1999 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
ICsat
t
IB1
t
IB2
t
VCE
TRANSISTOR
IC
IB
DIODE
26us20us
64us
Fig.1. Switching times waveforms (16 kHz).
ICsat
90 %
IC
10 %
IB
ts
IB1
tf
t
IBend
-VBB
LB
D.U.T.
Rbe
Fig.4. Switching times test circuit
hFE
100
VCE = 1V
10
+ 150 v nominal
adjust for ICsat
Lc
Cfb
.
Ths = 25 C
Ths = 85 C
t
- IB2
Fig.2. Switching times definitions.
I
F
10%
t
fr
V
F
5 V
I
F
time
V
F
time
Fig.3. Definition of anti-parallel diode Vfr and tfr.
1
0.01 0.1 1 10
IC / A
Fig.5. High and low DC current gain.
hFE
100
VCE = 5V
10
V
fr
1
0.01 0.1 1 10
BU4507DF/X/Z
Ths = 25 C
Ths = 85 C
IC / A
Fig.6. High and low DC current gain.
January 1999 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
10
Ths = 25 C
Ths = 85 C
1
0.1
0.01
0.1 1 10 100
BU4507DF/X/Z
IC/IB = 5
Fig.7. Typical collector-emitter saturation voltage.
VBESAT \ V
1.2
1.1
1
0.9
0.8
0.7
0.6
01234
IC = 4 A
BU4507DF/X/Z
Ths = 25 C
Ths = 85 C
IB / A
Fig.8. Typical base-emitter saturation voltage.
120
110
PD%
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/P
Zth K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
0.001
1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E+01
t / s
D 25˚C
BU4507AF
t
p
t
P
D
p
D =
T
t
T
Fig.11. Transient thermal impedance.
ts/tf/ us
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
BU4507D ts/tf
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
IB / A
Fig.9. Typical collector storage and fall time.
IC =4 A; Tj = 85˚C; f = 16kHz
January 1999 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
21.5
max
15.7
0.7
3.5
15.3 max
7.3
3.1
3.3
6.2
5.8
5.2 max
3.2
o
45
seating
plane
3.5 max
not tinned
min
12
2.1 max
5.45
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
1.2
1.0
5.45
3
0.7 max
M
0.4
2.0
January 1999 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1999 6 Rev 1.000
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