Datasheet BU4507AX Datasheet (Philips)

Page 1

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V V I I P V I

C CM

Csat

CESM CEO

tot CEsat

Collector-emitter voltage peak value VBE = 0 V - 1500 V Collector-emitter voltage (open base) - 800 V Collector current (DC) - 8 A Collector current peak value - 15 A Total power dissipation Ths ≤ 25 ˚C - 45 W Collector-emitter saturation voltage IC = 4 A; IB = 1 A - 3.0 V Collector saturation current f = 16kHz 4 - A

f = 56kHz 4 - A

Fall time I

= 4 A; f = 16kHz 0.3 0.45 µs

Csat

= 4 A; f = 56kHz 0.21 - µs

Csat

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 base 2 collector

case

3 emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V I

-I P T T

CESM CEO

BM tot stg j

Collector-emitter voltage peak value VBE = 0 V - 1500 V Collector-emitter voltage (open base) - 800 V Collector current (DC) - 8 A Collector current peak value - 15 A Base current (DC) - 4 A Base current peak value - 6 A Reverse base current peak value

Total power dissipation Ths ≤ 25 ˚C - 45 W Storage temperature -55 150 ˚C Junction temperature - 150 ˚C

123

-5A

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

th j-hs

th j-a

1 Turn-off current.

August 1998 1 Rev 1.100

Junction to heatsink with heatsink compound - 2.8 K/W Junction to ambient in free air 35 - K/W

Page 2

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

isol

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CES

EBO

CEOsust

EBO

CEsat

BEsat

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V three terminals to external heatsink

Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

Collector cut-off current

VBE = 0 V; VCE = V VBE = 0 V; VCE = V Tj = 125 ˚C

CESMmax CESMmax

- - 1.0 mA

- - 2.0 mA

Emitter cut-off current VEB = 6 V; IC = 0 A - - 100 µA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V

L = 25 mH Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V Collector-emitter saturation voltages IC = 4 A; IB = 1 A - - 3.0 V Base-emitter saturation voltage IC = 4 A; IB = 1 A 0.84 0.92 1.01 V DC current gain IC = 100 mA; VCE = 5 V - 12 -

IC = 4 A; VCE = 5 V 4.2 5.7 7.3

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 68 - pF Switching times (16 kHz line I

deflection circuit) (IB2 = -2.0 A)

= 4.0 A;IB1 = 0.8 A

Csat

Turn-off storage time 3.8 4.6 µs Turn-off fall time 0.30 0.45 µs

Switching times (56 kHz line I deflection circuit) (IB2 = -2.1 A)

= 4.0 A;IB1 = 0.8 A

Csat

Turn-off storage time 2.4 - µs Turn-off fall time 0.21 - µs

2 Measured with half sine-wave voltage (curve tracer).

August 1998 2 Rev 1.100

Page 3

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

30-60 Hz

IC / mA

250 200

100R

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

CEOsust

+ 50v

ICsat

90 %

10 %

IB1

- IB2

Fig.4. Switching times definitions.

+ 150 v nominal adjust for ICsat

100

VCE / V

Fig.2. Oscilloscope display for V

TRANSISTOR

VCE

DIODE

26us20us

64us

min

VCEOsust

CEOsust

ICsat

IB1

IB2

Fig.3. Switching times waveforms (16 kHz).

IBend

T.U.T.

Cfb

-VBB

Fig.5. Switching times test circuit

hFE

100

VCE = 1V

0.001 0.01 0.1 1 10

BU4507 1V

Ths = 25 C

Ths = 85 C

IC / A

Fig.6. High and low DC current gain.

August 1998 3 Rev 1.100

Page 4

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

hFE

100

VCE = 5V

0.001 0.01 0.1 1 10

Fig.7. High and low DC current gain.

VCC

IBend

-VBB

T.U.T.

Ths = 25 C Ths = 85 C

IC / A

BU4507AF

CFB

VCL

VCEsat / V

Ths = 25 C Ths = 85 C

0.1

0.01

0.1 1 10 100

IC/IB = 5

BU4507AF/X/Z

IC / A

Fig.10. Typical collector-emitter saturation voltage.

1.2

1.1

0.9

0.8

0.7

VBEsat / V

IC = 4 A

BU4507AF/X/Z

Ths = 25 C Ths = 85 C

Fig.8. Test Circuit RBSOA.

IC / A

100

VCE / V

1000

Fig.9. Reverse bias safe operating area. Tj ≤ T

BU2507

1500

jmax

0.6 0 0.5 1 1.5 2 2.5 3

IB / A

Fig.11. Typical base-emitter saturation voltage.

ts/tf / us

0 0.5 1 1.5 2 2.5 3

ICsat = 4 A

Ths = 85 C

Freq = 16 kHz

IB / A

Fig.12. Typical collector storage and fall time.

IC =4 A; Tj = 85˚C; f = 16kHz

August 1998 4 Rev 1.100

Page 5

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

120 110

PD%

Normalised Power Derating

with heatsink compound

100

90 80 70 60 50 40 30 20 10

0 20 40 60 80 100 120 140

Ths / C

Fig.13. Normalised power dissipation.

PD% = 100⋅PD/P

D 25˚C

Zth K/W

0.5

0.2

0.1

0.05

0.1

0.02

t / s

0.01

0.001

1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E+01

BU4507AF

D =

Fig.14. Transient thermal impedance.

August 1998 5 Rev 1.100

Page 6

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

MECHANICAL DATA

Dimensions in mm Net Mass: 5.88 g

4.5

16.0 max

10.0

0.7

3.3

5.8 max

3.0

max

22.5 max

18.1 min

5.45 5.45

Fig.15. SOT399; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

25.1

25.7

5.1

2.2 max

4.5

1.1

0.4 M 2

0.9 max

3.3

August 1998 6 Rev 1.100

Page 7

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4507AX

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 1998 7 Rev 1.100