Datasheet BU2708AX Datasheet (Philips)

Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
GENERAL DESCRIPTION
High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand V
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V V I I P V I t
C CM
Csat s
CESM CEO
tot CEsat
Collector-emitter voltage peak value VBE = 0 V - 1700 V Collector-emitter voltage (open base) - 825 V Collector current (DC) - 8 A Collector current peak value - 15 A Total power dissipation Ths 25 ˚C - 45 W Collector-emitter saturation voltage IC = 4 A; IB = 1.33 A - 1.0 V Collector saturation current f = 16 kHz 4 - A Storage time I
= 4 A; f = 16 kHz 4.8 5.5 µs
Csat
PINNING - SOT399 PIN CONFIGURATION SYMBOL
pulses up to 1700 V.
CES
PIN DESCRIPTION
case
c
1 base 2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1700 V Collector-emitter voltage (open base) - 825 V Collector current (DC) - 8 A Collector current peak value - 15 A Base current (DC) - 4 A Base current peak value - 6 A Reverse base current peak value
1
Total power dissipation Ths 25 ˚C - 45 W Storage temperature -65 150 ˚C Junction temperature - 150 ˚C
ESD LIMITING VALUES
123
e
-5A
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 Turn-off current.
Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV
1.5 k)
September 1997 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Junction to heatsink without heatsink compound - 3.7 K/W Junction to heatsink with heatsink compound - 2.8 K/W Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. 65 % ; clean and dustfree - 2500 V three terminals to external heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV V
CEOsust
EBO
Collector cut-off current
Emitter cut-off current VEB = 6 V; IC = 0 A - - 70 µA Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 900 - V
2
VBE = 0 V; VCE = V VBE = 0 V; VCE = V Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH V V h h
CEsat
BEsat FE FE
Collector-emitter saturation voltage IC = 4 A; IB = 1.33 A - - 1.0 V Base-emitter saturation voltage IC = 4 A; IB = 1.33 A 0.83 0.91 1.00 V DC current gain IC = 100 mA; VCE = 5 V - 21 -
IC = 4 A; VCE = 1 V 3 6 7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (line deflection I circuit 16 kHz) LB = 6 µH; -VBB = 4 V; LC = 1 mH;
t
s
t
f
Turn-off storage time 4.8 5.5 µs Turn-off fall time 0.4 0.52 µs
= 4 A; I
Csat
B(end)
CFB = 12.2 nF
= 0.8 A; -IBM = ICM/2;
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
30-60 Hz
IC / mA
250 200
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal adjust for ICsat
Lc
t
t
100
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.3. Switching times waveforms.
min
VCEOsust
CEOsust
ICsat
IBend
IBend
LB
T.U.T.
Cfb
-VBB
.
t
t
t
Fig.5. Switching times test circuit.
hFE BU2708AF
100
VCE = 5 V
10
1
0.01 0.1 1 10 100
Ths = 25 C Ths = 85 C
IC / A
Fig.6. DC current gain. hFE = f (IC)
Parameter T
hs
(Low and high gain)
September 1997 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
hFE BU2708AF
100
VCE = 1 V
10
1
0.01 0.1 1 10 100
Ths = 25 C Ths = 85 C
IC / A
Fig.7. DC current gain. hFE = f (IC)
10
1
0.1
Parameter T
(Low and high gain)
VCEsat / V
Tj = 85 C Tj = 25 C
IC/IB = 8
hs
BU2708AF
IC/IB = 4
PTOT / W BU2708AF/DF
10
1
0 0.5 1 1.5 2
Fig.10. Limit P
P
= f (I
tot
B(end)
PTOT / W BU2708AF/DF
10
IC = 3.5 A f = 16 kHz Tj = 85 C
IB / A
; Tj = 85˚C
); IC = 3.5 A; f = 16 kHz
tot
IC = 4 A f = 16 kHz Tj = 85 C
0.01
0.1 1 10 100 IC / A
Fig.8. Typical collector-emitter saturation voltage.
V
= f (IC); parameter IC/I
CEsat
VBEsat / V BU2708AF
1.2 Tj = 85 C
1.1
1
0.9
0.8
0.7
0.6
0 0.5 1 1.5 2
Tj = 25 C
IC = 4A
B
3A
IB / A
Fig.9. Typical base-emitter saturation voltage.
V
= f (IB); parameter I
BEsat
C
1
0 0.5 1 1.5 2
Fig.11. Limit P
P
= f (I
tot
ts/tf / us BU2708AF/DF
10
8
6
4
2
0
0 0.5 1 1.5 2
); IC = 4.0 A; f = 16 kHz
B(end)
; Tj = 85˚C
tot
IC = 3.5AIC = 4A
IB / A
IB / A
Fig.12. Limit storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
September 1997 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
PD%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
Zth / K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
D =
0
0.001
1.0E-06 1E-04 1E-02 1E+00 tp / sec
P
D
t
p
T
BU2708AF/DF
Fig.14. Transient thermal impedance.
Zth
= f(t); parameter D = tp/T
j-hs
D =
VCC
LC
IBend
-VBB
LB
T.U.T.
VCL
CFB
Fig.15. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;
CFB = 1 - 4 nF; I
IC / A
16 14 12 10
8 6
t
p
T
t
4 2 0
100 1000
Fig.16. Reverse bias safe operating area. Tj T
B(end)
VCE / V
= 0.8 - 4 A
BU2708AF/DF
Area where Fails occur
1700
jmax
September 1997 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
4.5
16.0 max
10.0
0.7
3.3
5.8 max
3.0
27
max
22.5 max
18.1 min
5.45 5.45
Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
25
25.1
25.7
5.1
2.2 max
4.5
1.1
0.4 M 2
0.95 max
3.3
September 1997 6 Rev 1.100
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708AX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997 7 Rev 1.100
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