High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current
load variations, resulting in a low worst-case dissipation. Designed to withstand V
QUICK REFERENCE DATA
SYMBOLPARAMETERCONDITIONSTYP.MAX.UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
s
CESM
CEO
tot
CEsat
Collector-emitter voltage peak valueVBE = 0 V-1700V
Collector-emitter voltage (open base)-825V
Collector current (DC)-8A
Collector current peak value-15A
Total power dissipationThs ≤ 25 ˚C-45W
Collector-emitter saturation voltageIC = 4 A; IB = 1.33 A-1.0V
Collector saturation currentf = 16 kHz4-A
Storage timeI
= 4 A; f = 16 kHz4.85.5µs
Csat
PINNING - SOT399PIN CONFIGURATIONSYMBOL
pulses up to 1700 V.
CES
PINDESCRIPTION
case
c
1base
2collector
b
3emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak valueVBE = 0 V-1700V
Collector-emitter voltage (open base)-825V
Collector current (DC)-8A
Collector current peak value-15A
Base current (DC)-4A
Base current peak value-6A
Reverse base current peak value
1
Total power dissipationThs ≤ 25 ˚C-45W
Storage temperature-65150˚C
Junction temperature-150˚C
ESD LIMITING VALUES
123
e
-5A
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
C
1 Turn-off current.
Electrostatic discharge capacitor voltage Human body model (250 pF,-10kV
1.5 kΩ)
September 19971Rev 1.100
Page 2
Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU2708AX
THERMAL RESISTANCES
SYMBOLPARAMETERCONDITIONSTYP.MAX.UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
isol
C
isol
Junction to heatsinkwithout heatsink compound-3.7K/W
Junction to heatsinkwith heatsink compound-2.8K/W
Junction to ambientin free air35-K/W
Repetitive peak voltage from allR.H. ≤ 65 % ; clean and dustfree-2500V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz-22-pF
heatsink
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
September 19974Rev 1.100
Page 5
Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU2708AX
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
020406080100120140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
Zth / K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
D =
0
0.001
1.0E-061E-041E-021E+00
tp / sec
P
D
t
p
T
BU2708AF/DF
Fig.14. Transient thermal impedance.
Zth
= f(t); parameter D = tp/T
j-hs
D =
VCC
LC
IBend
-VBB
LB
T.U.T.
VCL
CFB
Fig.15. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;
CFB = 1 - 4 nF; I
IC / A
16
14
12
10
8
6
t
p
T
t
4
2
0
1001000
Fig.16. Reverse bias safe operating area. Tj ≤ T
B(end)
VCE / V
= 0.8 - 4 A
BU2708AF/DF
Area where
Fails occur
1700
jmax
September 19975Rev 1.100
Page 6
Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU2708AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
4.5
16.0 max
10.0
0.7
3.3
5.8 max
3.0
27
max
22.5
max
18.1
min
5.455.45
Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
25
25.1
25.7
5.1
2.2 max
4.5
1.1
0.4 M
2
0.95 max
3.3
September 19976Rev 1.100
Page 7
Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU2708AX
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 19977Rev 1.100
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