Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
GENERAL DESCRIPTION
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for
use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1750 V
Collector-emitter voltage (open base) - 850 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - 1.0 V
Collector saturation current 1.5 - A
Fall time ICM = 1.5 A; I
= 0.3 A 0.25 0.6 µs
B(on)
PIN DESCRIPTION
mb
c
1 base
2 collector
b
3 emitter
mb collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
-I
P
T
T
CESM
CEO
B(AV)
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1750 V
Collector-emitter voltage (open base) - 850 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Base current (DC) - 3 A
Base current peak value - 5 A
Reverse base current average over any 20ms period - 100 mA
Reverse base current peak value - 4 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
13
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to mounting - 1.25 K/W
base
Thermal resistance junction to ambient minimum footprint, FR4 board 55 - K/W
February 1998 1 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
Collector cut-off current
Emitter cut-off current VEB = 12 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 750 - - V
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.0 V
Base-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.3 V
DC current gain IC = 5 mA; VCE = 10 V 8 - -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Turn-on time 1.1 1.5 µs
Turn-off storage time 5 6.5 µs
Turn-off fall time 0.75 1.0 µs
Switching times (inductive load) I
Turn-off storage time 2.0 3.0 µs
Turn-off fall time 0.25 0.6 µs
Switching times (inductive load) I
Turn-off storage time 2.2 3.3 µs
Turn-off fall time 0.2 0.7 µs
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = 1500 V - - 20 µA
VBE = 0 V; VCE = V
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Tj = 125 ˚C
L = 25 mH
IC = 400 mA; VCE = 3 V 12 18 35
IC = 1.5 A; VCE = 1 V 5 7 -
= 1.5 A; I
Con
= 1.5 A; I
Con
= -I
Bon
Bon
= 0.3 A
Boff
= 0.3 A; LB = 1 µH;
-VBB = 5 V
= 1.5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= 0.3 A; LB = 1 µH;
Bon
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
CEOsust
.
100-200R
Horizontal
Oscilloscope
Vertical
300R
30-60 Hz
6V
Fig.1. Test circuit for V
1 Measured with half sine-wave voltage (curve tracer).
1R
CEOsust
+ 50v
. Fig.2. Oscilloscope display for V
February 1998 2 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
VCC
R
L
VIM
0
R
B
T.U.T.
tp
T
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
90 %
IC
ton
IB
10 %
tr 30ns
Con
and I
ts
toff
requirements.
Bon
ICon
90 %
10 %
tf
IBon
VCC
LC
VCL
IBon
-VBB
LB
T.U.T.
Fig.6. Test Circuit RBSOA.
VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;
LB = 1 µH
ICon
90 %
IC
10 %
ts
toff
IB
IBon
tf
t
t
-IBoff
Fig.4. Switching times waveforms with resistive load.
VCC
LC
IBon
-VBB
LB
T.U.T.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LB = 1 uH
Fig.7. Switching times waveforms with inductive load.
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.8. Normalised power dissipation.
PD% = 100⋅PD/PD
25 ˚C
-IBoff
= f (Tmb)
February 1998 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
Zth / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0.5
0.2
0.1
0.05
0.02
0
D=
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
t
P
D
BU1706A
t
D =
p
T
t
p
T
Fig.9. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
IC / A
BU1706A
IC/IB =
4
5
6
Fig.10. Typical base-emitter saturation voltage.
V
= f(IC); parameter IC/I
BEsat
B
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0 1 2 3 4
Tj = 25 C
Tj = 125 C
IB / A
BU1706A
IC =
3 A
2 A
1.5 A
0.5 A
Fig.12. Typical base-emitter saturation voltage.
V
= f(IB); parameter I
BEsat
VCESAT / V BU1706A
10
1
2A
1.5 A
IC = 0.5A
0.1
0.01
0.01 1
0.1 10
IB / A
C
3A
Tj = 25 C
Tj = 125 C
Fig.13. Typical collector-emitter saturation voltage.
V
= f(IB); parameter I
CEsat
C
VCESAT / V BU1706A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10
IC/IB =
6
5
4
Tj = 25 C
Tj = 125 C
IC / A
Fig.11. Typical collector-emitter saturation voltage.
V
= f(IC); parameter IC/I
CEsat
B
h
FE
100
5 V
10
1
0.1
0.01 1
1 V
Tj = 25 C
Tj = 125 C
0.1 10
IC / A
Fig.14. Typical DC current gain.
hFE = f(IC); parameter V
BU1706A
CE
February 1998 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
IC / A
10
I
CM
I
CDC
P
1
tot
tp =
0.1
100 us
1 ms
10 ms
DC
0.01
1 10 100 1000
VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
IC / A BU1706A
6
5
4
3
2
1
0
0 400 800 1200 1600 2000
VCE / V
Fig.16. Reverse bias safe operating area. Tj ≤ T
jmax
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
February 1998 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.17. SOT404 : centre pin connected to mounting base.
11.5
2.5
Notes
1. Plastic meets UL94 V0 at 1/8".
9.0
17.5
2.0
3.8
5.08
Fig.18. SOT404 : soldering pattern for surface mounting
.
February 1998 6 Rev 1.000
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AB
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1998 7 Rev 1.000
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