Page 1
Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 (ø 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radiation.
The viewing angle of ± 25° makes it insensible to ambient straylight.
Features
D
Fast response times
D
High photo sensitivity
D
Standard T–1 (ø 3 mm ) clear plastic package
D
Axial terminals
D
Angle of half sensitivity ϕ = ± 25
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
°
BPW85
Vishay Telefunken
94 8396
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
tp/T = 0.5, tp x 10 ms
T
x 55 °C
amb
t x 3 s, 2 mm from case
CEO
ECO
C
I
CM
P
tot
stg
T
sd
thJA
70 V
5 V
50 mA
100 mA
100 mW
j
100
–55...+100
260
450 K/W
°
C
°
C
°
C
Document Number 81531
Rev. 3, 16-Nov-99
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1 (6)
Page 2
BPW85
g
e
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Angle of Half Sensitivity ϕ ±25 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS = 5 V, IC = 5 mA,
Turn–Off Time VS = 5 V, IC = 5 mA,
Cut–Off Frequency VS = 5 V, IC = 5 mA,
IC = 1 mA V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.1 mA
RL = 100
RL = 100
RL = 100
W
W
W
(BR)CE
O
CEO
CEO
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
70 V
1 200 nA
3 pF
850 nm
620...980 nm
0.3 V
2.0
2.3
180 kHz
m
s
m
s
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Collector Light Current Ee=1mW/cm2, BPW85A I
l
=950nm, VCE=5V
BPW85B I
BPW85C I
Typical Characteristics (T
125
100
75
50
25
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8308
Figure 1. Total Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
4
10
3
10
CEO
I – Collector Dark Current ( nA )
94 8304
2
10
1
10
0
10
R
thJA
100
Figure 2. Collector Dark Current vs. Ambient Temperature
ca
ca
ca
20
0.8 1.5 2.5 mA
1.5 2.5 4.0 mA
3.0 5.0 8.0 mA
VCE=20V
40 60 80
T
– Ambient Temperature ( °C )
amb
100
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Document Number 81531
Page 3
BPW85
Vishay Telefunken
2.0
1.8
1.6
VCE=5V
E
=1mW/cm
e
l
=950nm
2
1.4
1.2
1.0
ca rel
0.8
I – Relative Collector Current
0.6
0
20 40 60 80
94 8239
T
– Ambient Temperature ( °C )
amb
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
1
0.1
BPW85C
BPW85A
BPW85B
100
ca
I – Collector Light Current ( mA )
94 8276
10
BPW 85 B Ee=1mW/cm
1
0.1
l
=950nm
0.01
0.1 1 10
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Light Current vs.
Collector Emitter Voltage
10
Ee=1mW/cm
1
0.1
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
2
2
2
2
2
100
2
2
2
2
2
ca
I – Collector Light Current ( mA )
0.01
VCE=5V
l
=950nm
0.01 0.1 1
94 8271
Ee – Irradiance ( mW/cm2 )
Figure 4. Collector Light Current vs. Irradiance
10
BPW 85 A
l
=950nm
1
Ee=1mW/cm
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.1
ca
I – Collector Light Current ( mA )
0.05mW/cm
0.01
0.1 1 10
94 8275
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
ca
I – Collector Light Current ( mA )
0.01
10
94 8277
0.1 1 10
VCE – Collector Emitter Voltage ( V )
BPW 85 C
l
=950nm
100
Figure 7. Collector Light Current vs.
Collector Emitter Voltage
10
2
2
2
2
2
8
6
4
f=1MHz
2
CEO
C – Collector Emitter Capacitance ( pF )
94 8294
0
0.1 1 10
– Collector Emitter Voltage ( V )
V
CE
100
100
Figure 8. Collector Emitter Capacitance vs.
Collector Emitter Voltage
Document Number 81531
Rev. 3, 16-Nov-99
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3 (6)
Page 4
BPW85
Vishay Telefunken
8
m
6
4
VCE=5V
R
=100
L
l
=950nm
0°
10°20
°
30°
W
1.0
0.9
40°
50°
t
off
t
on
108
14
off
on
t / t – Turn on / Turn off Time ( s )
94 8293
2
0
024 6 12
IC – Collector Current ( mA )
Figure 9. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
400 600 1000
l
– Wavelength ( nm )94 8348
800
0.8
rel
S – Relative Sensitivity
0.7
0.4 0.2 0 0.2 0.4
0.6
94 8295
Figure 11. Relative Radiant Sensitivity vs.
Angular Displacement
60°
70°
80°
0.6
Figure 10. Relative Spectral Sensitivity vs.
Wavelength
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Document Number 81531
Page 5
Dimensions in mm
BPW85
Vishay Telefunken
Document Number 81531
Rev. 3, 16-Nov-99
96 12190
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5 (6)
Page 6
BPW85
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6) Rev. 3, 16-Nov-99
Document Number 81531
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