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Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically
sealed metal case.
Its flat glass window makes it ideal for applications with
external optics.
A base terminal is available to enable biasing and sensitivity control.
Features
D
Hermetically sealed case
D
Flat window
D
Very wide viewing angle ϕ = ± 40
D
Exact central chip alignment
D
Long range light barrier with an additional optics
D
Base terminal available
D
High photo sensitivity
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
°
BPW76
Vishay Telefunken
94 8401
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
tp/T = 0.5, tp x 10 ms
T
x 25 °C
amb
t x 5 s
CBO
CEO
EBO
C
I
CM
P
tot
stg
T
sd
thJA
thJC
80 V
70 V
5 V
50 mA
100 mA
250 mW
j
125
–55...+125
260
°
C
°
C
°
C
400 K/W
150 K/W
Document Number 81526
Rev. 2, 20-May-99
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BPW76
g
e
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Angle of Half Sensitivity ϕ ±40 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS = 5 V, IC = 5 mA,
Turn–Off Time VS = 5 V, IC = 5 mA,
Cut–Off Frequency VS = 5 V, IC = 5 mA,
IC = 1 mA V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.1 mA
RL = 100
RL = 100
RL = 100
W
W
W
(BR)CE
O
CEO
CEO
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
70 V
1 100 nA
6 pF
850 nm
620...980 nm
0.15 0.3 V
6
5
110 kHz
m
s
m
s
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Collector Light Current Ee=1mW/cm2, BPW76A I
l
=950nm, VCE=5V
Typical Characteristics (T
800
600
R
thJC
tot
P – Total Power Dissipation ( mW )
94 8342
400
200
0
Figure 1. Total Power Dissipation vs.
R
thJA
0 25 50 75 100
T
– Ambient Temperature ( °C )
amb
Ambient Temperature
amb
125
150
BPW76B I
= 25_C unless otherwise specified)
6
10
5
10
4
10
3
10
2
10
1
CEO
10
I – Collector Dark Current ( nA )
0
10
94 8343
Figure 2. Collector Dark Current vs. Ambient Temperature
ca
ca
20
0.4 0.6 0.8 mA
0.6 1.2 mA
VCE=20V
E=0
50 100
T
– Ambient Temperature ( °C )
amb
150
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Document Number 81526
Page 3
BPW76
Vishay Telefunken
3.5
3.0
2.5
VCE=5V
E
=1mW/cm
e
l
=950nm
2
2.0
1.5
1.0
ca rel
0.5
I – Relative Collector Current
0
0 50 100
94 8344
T
– Ambient Temperature ( °C )
amb
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
1
0.1
0.01
ca
I – Collector Light Current ( mA )
0.001
0.01 0.1 1
94 8345
Ee – Irradiance ( mW/cm2 )
VCE=5V
l
=950nm
150
10
20
16
f=1MHz
12
8
4
CEO
C – Collector Emitter Capacitance ( pF )
0
0.1 1 10
94 8247
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
m
off
on
t / t – Turn on / Turn off Time ( s )
94 8253
10
8
6
4
2
0
04 81216
IC – Collector Current ( mA )
VCE=5V
R
=100
L
l
=950nm
100
W
t
on
t
off
Figure 4. Collector Light Current vs. Irradiance
ca
I – Collector Light Current ( mA )
94 8346
1
BPW76A
l
=950nm
Ee=1mW/cm
0.1
0.01
0.1 1 10
VCE – Collector Emitter Voltage ( V )
2
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Document Number 81526
Rev. 2, 20-May-99
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
2
0.8
2
2
2
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
100
400 600 1000
l
– Wavelength ( nm )94 8348
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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BPW76
Vishay Telefunken
0°
10°20
°
30°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
0.4 0.2 0 0.2 0.4
0.6
94 8347
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
40°
50°
60°
70°
80°
0.6
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Document Number 81526
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Dimensions in mm
BPW76
Vishay Telefunken
96 12175
Document Number 81526
Rev. 2, 20-May-99
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BPW76
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6) Rev. 2, 20-May-99
Document Number 81526
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