0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
0.50 (12.7)
MIN
0.255 (6.48)
Collector
(Case)
Base
Emitter
Ø0.100 (2.54)
0.020 (0.51) 3X
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Collector-Emitter Voltage V
CEO
45 V
Collector-Base Voltage V
CBO
45 V
Emitter-Base Voltage V
EBO
5V
Power Dissipation (TA= 25°C)
(1)
P
D
300 mW
Power Dissipation (TC= 25°C)
(2)
P
D
600 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
DESCRIPTION
• The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300279 3/13/01 1 OF 4 www.fairchildsemi.com
C
B
E
www.fairchildsemi.com 2 OF 4 3/13/01 DS300279
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BVCEO 45 — — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BVEBO 5.0 — — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 45 — — V
Collector-Emitter Leakage VCE= 10 V, Ee = 0 ICEO — — 100 nA
Reception Angle at 1/2 Sensitivity 0 — ±10 — Deg.
On-State Collector Current BPW36
Ee = 0.5 mW/cm
2
IC(ON)
1.0 — — mA
V
CE
= 5 V
(7)
On-State Collector Current BPW37
Ee = 0.5 mW/cm
2
IC(ON) 0.5 — — mA
V
CE
= 5 V
(7)
Turn-On Time
I
C
= 2 mA, VCC= 10 V
t
on
—8—µs
R
L
= 100 1
Turn-Off Time
I
C
= 2 mA, VCC= 10 V
t
off
—7—µs
R
L
= 100 1
Saturation Voltage IC= 1.0 mA, Ee = 3.0 mW/cm2V
CE(SAT)
— — 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA
=25°C) (All measurements made under pulse conditions)
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
TYPICAL PERFORMANCE CURVES
10
Ee = 20 mW/cm
1.0
0.1
- NORMALIZED LIGHT CURRENT
L
I
.01
.01
0.1 1.0 10 100 0.1
VCE - COLLECTOR TO EMITTER VOLTAGE
10 mW/cm
5 mW/cm
2 mW/cm
1 mW/cm
Normalized to:
V
Ee = 10 mW/cm
Fig. 1 Light Current vs. Collector to Emitter Voltage
2
2
2
2
2
= 5 V
CE
2
10
1.0
0.1
Normalized to:
= 5 V
V
CE
- NORMALIZED LIGHT CURRENT
L
I
.01
1.0 10 100
H - TOTAL IRRADIANCE IN mW/cm
Ee = 10 mW/cm
Fig. 2 Normalized Light Current vs. Radiation
2
2
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
DS300279 3/13/01 3 OF 4 www.fairchildsemi.com
TYPICAL PERFORMANCE CURVES
10
1.0
Normalized to:
= 5 V
V
- NORMALIZED LIGHT CURRENTI
L
I
0.1
-50 0 50 100 150 0.1 1.0 10 100
CE
Ee = 10 mW/cm
TA = 25˚C
2
10
RL = 1 k1
1.0
Normalized to:
= 10 V
V
CE
= 2 mA
SWITCHING TIME (µs)I
0.1
I
L
= t
= 5 µs
t
ON
OFF
RL = 100 1
TA - TEMPERATURE (˚C) IL - OUTPUT CURRENT (mA)
Fig. 3 Normalized Light Current vs. Temperature Fig. 4 Switching Times vs. Output Current
6
10
5
10
4
10
3
10
2
10
1.4
1.2
1.0
0.8
0.6
CQX14 BPW36 OR
RL = 100 1
RL = 10 1
BPW37
10.0
1.0
- NORMALIZED DARK CURRENT
L
0.1
0 25 50 75 100 125 150
Normalized to:
@ 25˚C
I
D
= 10 V
V
CEO
TA - TEMPERATURE (˚C) TA - TEMPERATURE (˚C)
Fig. 5 Dark Current vs. Temperature Fig. 6 Normalized Light Current vs. Temperature
0.4
0.2
- NORMALIZED LIGHT CURRENT
L
0
55 35 15 25 45 65 85 1055
Normalized to:
CQX14 Input = 10 mA
V
I
T
Both Emitter (CQX14) and Detector
(BPW36 or BPW37) at Same Temperature
= 10 V
CEO
= 100 µA
L
= 25˚C
A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
www.fairchildsemi.com 4 OF 4 3/13/01 DS300279
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