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Silicon PIN Photodiode
Description
BPW24R is a high sensitive silicon planar photodiode
in a standard TO–18 hermetically sealed metal case
with a glass lens.
A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
features a low capacitance and high speed even at low
supply voltages.
Features
D
Hermetically sealed TO–18 case
D
Exact central chip alignment
D
Cathode connected to case
D
Angle of half sensitivity ϕ = ± 12
D
Extra fast response times at low operating voltages
D
High photo sensitivity
D
Radiant sensitive area A=0.78 mm
D
Suitable for visible and near infrared radiation
D
For photodiode and photovoltaic cell operation
°
2
BPW24R
Vishay Telefunken
94 8642
Applications
High speed photo detector
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
T
x 25 °C
amb
t x 5 s
P
amb
stg
T
sd
thJA
R
V
j
60 V
210 mW
125
–55...+125
–55...+125
260
350 K/W
°
C
°
C
°
C
°
C
Document Number 81520
Rev. 2, 20-May-99
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1 (5)
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BPW24R
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 50 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 5 V, f = 1 MHz, E = 0 C
VR = 20 V, f = 1 MHz, E = 0 C
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Temp. Coefficient of V
o
Ee = 1 mW/cm2, l = 950 nm TK
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Temp. Coefficient of I
k
EA = 1 klx TK
Reverse Light Current Ee = 1 mW/cm2,
l
= 950 nm, VR = 20 V
(BR)
ro
D
D
D
o
k
I
ra
Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.60 A/W
VR = 5 V, l = 900 nm s(l) 0.55 A/W
Angle of Half Sensitivity ϕ ±12 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time VR = 20 V, RL = 50 W,
l
= 820 nm
Fall Time VR = 20 V, RL = 50 W,
l
= 820 nm
l
p
l
0.5
t
r
t
f
60 200 V
2 10 nA
11 pF
3.8 pF
2.5 pF
450 mV
Vo
–2 mV/K
55
Ik
0.1 %/K
45 60
900 nm
600...1050 nm
7 ns
7 ns
m
m
A
A
Typical Characteristics (T
4
10
3
10
2
10
1
10
ro
I – Reverse Dark Current ( nA )
0
10
94 8454
Figure 1. Reverse Dark Current vs. Ambient Temperature
VR=50V
40 60 80
T
– Ambient Temperature ( °C )
amb
10020
= 25_C unless otherwise specified)
amb
120
1.4
1.2
1.0
0.8
ra rel
I – Relative Reverse Light Current
0.6
020406080
T
94 8409
Figure 2. Relative Reverse Light Current vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
VR=5V
l
=950nm
100
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2 (5) Rev. 2, 20-May-99
Document Number 81520
Page 3
m
1000
100
BPW24R
Vishay Telefunken
1.0
0.8
10
VR=10V
l
1
ra
I – Reverse Light Current ( A )
=950nm
0.1
0.01 0.1 1
94 8455
Ee – Irradiance ( mW/cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
m
ra
I – Reverse Light Current ( A )
94 8456
100
1mW/cm
10
1
0.1 1 10
2
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
0.02mW/cm
V
R
2
2
2
2
2
l
– Reverse Voltage ( V )
=950nm
100
Figure 4. Reverse Light Current vs. Reverse Voltage
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
1150
94 8458
350 550 750 950
l
– Wavelength ( nm )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
50°
60°
70°
80°
0.6
94 8459
0.4 0.2 0 0.2 0.4
0.6
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
12
10
8
E=0
f=1MHz
6
4
D
C – Diode Capacitance ( pF )
2
0
0.1 1 10
94 8439
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81520
Rev. 2, 20-May-99
100
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Page 4
BPW24R
Vishay Telefunken
Dimensions in mm
14487
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Document Number 81520
Page 5
BPW24R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81520
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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