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Silicon PN Photodiode
Description
BPW21R is a planar Silicon PN photodiode in a
hermetically sealed short TO–5 case, especially designed for high precision linear applications.
Due to its extremely high dark resistance, the short
circuit photocurrent is linear over seven decades of illumination level.
On the other hand, there is a strictly logarithmic
correlation between open circuit voltage and illumination over the same range.
The device is equipped with a flat glass window with
built in color correction filter, giving an approximation
to the spectral response of the human eye.
Features
BPW21R
Vishay Telefunken
94 8394
D
Hermetically sealed TO–5 case
D
Flat glass window with built–in color correction filter for visible radiation
D
Cathode connected to case
D
Wide viewing angle ϕ = ± 50
D
Large radiant sensitive area (A=7.5 mm2)
D
Suitable for visible radiation
D
High sensitivity
D
Low dark current
D
High shunt resistance
D
Excellent linearity
D
For photodiode and photovoltaic cell operation
°
Applications
Sensor in exposure and color measuring purposes
Document Number 81519
Rev. 2, 20-May-99
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1 (5)
Page 2
BPW21R
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
T
amb
x 50 °C
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
t x 5 s
Thermal Resistance Junction/Ambient R
P
amb
stg
T
sd
thJA
R
V
j
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 20 mA, E = 0 V
Reverse Dark Current VR = 5 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 5 V, f = 1 MHz, E = 0 C
Dark Resistance VR = 10 mV R
Open Circuit Voltage EA = 1 klx V
Temp. Coefficient of V
o
EA = 1 klx TK
Short Circuit Current EA = 1 klx I
Temp. Coefficient of I
k
EA = 1 klx TK
Reverse Light Current EA = 1 klx, VR = 5 V I
Sensitivity VR = 5 V, EA = 10–2...105 lx S 9 nA/lx
Angle of Half Sensitivity ϕ ±50 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time VR = 0 V, RL = 1k W,
l
= 660 nm
Fall Time VR = 0 V, RL = 1k W,
l
= 660 nm
(BR)
l
l
0.5
t
t
F
10 V
ro
D
D
D
280 450 mV
o
Vo
k
ra
4.5 9
lk
4.5 9
p
400 pF
–0.05 %/K
565 nm
420...675 nm
r
f
10 V
300 mW
125
–55...+125
–55...+125
260
°
°
°
°
250 K/W
1.0 1.3 V
2 30 nA
1.2 nF
38 G
–2 mV/K
m
m
3.1
3.0
m
m
C
C
C
C
W
A
A
s
s
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2 (5) Rev. 2, 20-May-99
Document Number 81519
Page 3
BPW21R
Vishay Telefunken
Typical Characteristics (T
4
10
3
10
2
10
= 25_C unless otherwise specified)
amb
VR=5V
1
10
ro
I – Reverse Dark Current ( nA )
0
10
40 60 80
T
– Ambient Temperature ( °C )94 8468
amb
120
10020
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.3
1.2
1.1
1400
1200
1000
E=0
f=1MHz
800
600
400
D
C – Diode Capacitance ( pF )
200
0
100
94 8473
0.1 1 10
VR – Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage
1.0
0.8
0.6
1.0
0.9
ra rel
I – Relative Reverse Light Current
0.8
020406080
T
– Ambient Temperature ( °C )94 8738
amb
100
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
2
10
1
10
m
0
10
–1
10
–2
10
k
–3
I – Short Circuit Current ( A )
10
–4
10
10–210
0
–1
10
10110210310
EA – Illuminance ( lx )94 8476
120
0.4
rel
0.2
l
Vl Eye
S ( ) – Relative Spectral Sensitivity
0
750
94 8477
350 450 550 650
l
– Wavelength ( nm )
Figure 5. Relative Spectral Sensitivity vs. Wavelength
0°
10°20
°
30°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
4
94 8475
0.4 0.2 0 0.2 0.4
0.6
40°
50°
60°
70°
80°
0.6
Figure 3. Short Circuit Current vs. Illuminance
Document Number 81519
Rev. 2, 20-May-99
Figure 6. Relative Radiant Sensitivity vs.
Angular Displacement
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3 (5)
Page 4
BPW21R
Vishay Telefunken
Dimensions in mm
96 12181
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4 (5) Rev. 2, 20-May-99
Document Number 81519
Page 5
BPW21R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81519
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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