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Silicon PN Photodiode
Description
BPW20R is a planar Silicon PN photodiode in a
hermetically sealed short TO–5 case, especially designed for high precision linear applications.
Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of
illumination level.
On the other hand, there is a strictly logarithmic
correlation between open circuit voltage and illumination over the same range.
Equipped with a clear, flat glass window, the spectral
responsitivity reaches from blue to near infrared.
Features
BPW20R
Vishay Telefunken
94 8482
D
Hermetically sealed TO–5 case
D
Flat glass window
D
Cathode connected to case
D
Wide viewing angle ϕ = ± 50
D
Large radiant sensitive area (A=7.5 mm2)
D
Suitable for visible and near infrared radiation
°
D
High sensitivity
D
UV enhanced
D
Low dark current
D
High shunt resistance
D
Excellent linearity
D
For photodiode and photovoltaic cell operation
Applications
Sensor for light measuring techniques in cameras, photometers, color analyzers, exposure meters (e.g. solariums) and other medical and industrial measuring and control applications.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
T
x 50 °C
amb
t x 5 s
P
T
R
V
j
amb
stg
sd
thJA
10 V
300 mW
125
–55...+125
–55...+125
260
250 K/W
°
C
°
C
°
C
°
C
Document Number 81517
Rev. 2, 20-May-99
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Page 2
BPW20R
g
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 20 mA, E = 0 V
Reverse Dark Current VR = 5 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 5 V, f = 1 MHz, E = 0 C
Dark Resistance VR = 10 mV R
Open Circuit Voltage EA = 1 klx V
Temp. Coefficient of V
o
EA = 1 klx TK
Short Circuit Current EA = 1 klx I
Temp. Coefficient of I
k
EA = 1 klx TK
Reverse Light Current EA = 1 klx, VR = 5 V I
Ee = 1 mW/cm2,
l
= 950 nm, V
= 5 V
R
F
(BR)
ro
D
D
D
o
Vo
k
Ik
ra
I
ra
10 V
330 500 mV
20 60
20 60
Angle of Half Sensitivity ϕ ±50 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time VR = 0 V, RL = 1k W,
l
= 820 nm
Fall Time VR = 0 V, RL = 1k W,
l
= 820 nm
l
p
l
0.5
t
r
t
f
1.0 1.3 V
2 30 nA
1.2 nF
400 pF
38 G
–2 mV/K
m
0.1 %/K
m
42
m
920 nm
550...1040 nm
3.4
3.7
W
A
A
A
m
s
m
s
Typical Characteristics (T
4
10
3
10
2
10
1
10
ro
I – Reverse Dark Current ( nA )
0
10
Figure 1. Reverse Dark Current vs. Ambient Temperature
40 60 80
T
– Ambient Temperature ( °C )94 8468
amb
VR=5V
10020
= 25_C unless otherwise specified)
amb
120
1.3
1.2
VR=5V
l
1.1
1.0
0.9
ra rel
I – Relative Reverse Light Current
0.8
020406080
Figure 2. Relative Reverse Light Current vs.
=950nm
T
– Ambient Temperature ( °C )94 8469
amb
Ambient Temperature
100
120
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Document Number 81517
Page 3
BPW20R
Vishay Telefunken
2
10
1
10
m
0
10
–1
10
–2
10
k
–3
I – Short Circuit Current ( A )
10
–4
10
10–210
0
–1
10
10110210310
EA – Illuminance ( lx )94 8470
Figure 3. Short Circuit Current vs. Illuminance
100
m
10
VR=5V
l
1
ra
I – Reverse Light Current ( A )
0.1
0.01 0.1 1
94 8471
Ee – Irradiance ( mW/cm2 )
=950nm
1400
1200
1000
E=0
f=1MHz
800
600
400
D
C – Diode Capacitance ( pF )
200
94 8473
0
0.1 1 10
VR – Reverse Voltage ( V )
100
4
Figure 6. Diode Capacitance vs. Reverse Voltage
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
94 8474
0
350 550 750 950
l
– Wavelength ( nm )
1150
10
Figure 4. Reverse Light Current vs. Irradiance
100
m
ra
I – Reverse Light Current ( A )
94 8472
1mW/cm
0.5mW/cm
10
0.2mW/cm
0.1mW/cm
0.05mW/cm
l
=950nm
1
0.1 1 10
V
– Reverse Voltage ( V )
R
2
2
2
2
2
100
Figure 5. Reverse Light Current vs. Reverse Voltage
Document Number 81517
Rev. 2, 20-May-99
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
50°
60°
70°
80°
0.6
94 8475
0.4 0.2 0 0.2 0.4
0.6
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
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Page 4
BPW20R
Vishay Telefunken
Dimensions in mm
96 12181
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4 (5) Rev. 2, 20-May-99
Document Number 81517
Page 5
BPW20R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81517
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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