Datasheet blw80 DATASHEETS (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW80

UHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

UHF power transistor BLW80

1

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.

The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.

QUICK REFERENCE DATA

R.F. performance up to T

=25°C in an unneutralized common-emitter class-circuit.

h

The transistor is housed in a
capstan envelope with a ceramic cap.

⁄4"

MODE OF OPERATION V

c.w. 12,5 470 4 > 8,0 > 60 2,1 + j2,3 57 − j56

c.w. 12,5 175 4 typ. 15,0 typ. 60 2,0 − j2,2 51−j48

PIN CONFIGURATION

handbook, halfpage

Fig.1 Simplified outline. SOT122A.

CE

V

Top view

f

MHz

P

W

L

G

p

dB

%

η

z

i

Ω

Y

mS

L

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

4

31

2

MBK187

3 base
4 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

March 1993 2

Philips Semiconductors Product specification

UHF power transistor BLW80

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (d.c.) I
Collector current (peak value); f > 1 MHz I
Total power dissipation (d.c. and r.f.) up to T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM
CEO

EBO
C
CM

=25°CP

mb

tot

stg

j

−65 to +150 °C
max 200 °C

max 36 V
max 17 V
max 4 V
max 1 A
max 3 A
max 17 W

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

Th = 70 °C

Fig.2 D.C. soar.

THERMAL RESISTANCE

MGP938

T

= 25 °C

mb

VCE (V)

2

30

handbook, halfpage

P

rf

(W)

20

short time operation
during mismatch

10

0

0 50 100

r.f. power dissipation

derate by

0.092 W/K

continuous operation

Th (°C)

MGP939

VCE ≤ 16.5 V

f > 1 MHz

Fig.3 R.F. power dissipation.

From junction to mounting base R
From mounting base to heatsink R

March 1993 3

th j-mb
th mb-h

= 10,3 K/W
= 0,6 K/W

Philips Semiconductors Product specification

UHF power transistor BLW80

CHARACTERISTICS

T

=25°C

j

Breakdown voltages

Collector-emitter voltage

=0;IC=10mA V

V

BE

Collector-emitter voltage

open base; I

=50mA V

C

Emitter-base voltage

open collector; IE= 4 mA V

Collector cut-off current

= 0; VCE=17V I

V

BE

D.C. current gain

(1)

IC= 0,5 A; VCE=5V h

Collector-emitter saturation voltage

(1)

IC= 1,5 A; IB= 0,3 A V

Transition frequency at f = 500 MHz

(1)

IC= 0,5 A; VCE= 12,5 V f
I

= 1,5 A; VCE= 12,5 V f

C

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 12,5 V C

Feedback capacitance at f = 1 MHz

IC= 40 mA; VCE= 12,5 V C

Collector-stud capacitance

(BR)CES

(BR)CEO

(BR)EBO

CES

FE

CEsat

T
T

c

re

C

cs

> 36 V

> 17 V

> 4V

< 4mA

> 10

typ 35

typ 0,75 V

typ 1,75 GHz
typ 1,25 GHz

typ 14 pF

typ 7,1 pF
typ 1,2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

March 1993 4

Philips Semiconductors Product specification

UHF power transistor BLW80

40

handbook, halfpage

h

FE

30

20

10

0

0123

typ

Fig.4

MGP562

VCE = 5 V
Tj = 25 °C

IC (A)

30

handbook, halfpage

C

c

(pF)

20

10

0

0

IE = Ie = 0
f = 1 MHz

Tj = 25 °C

typ

10 20

VCB (V)

Fig.5

MGP563

f

T

(GHz)

2

1

0

0

handbook, full pagewidth

Fig.6

March 1993 5

typ

MGP564

VCE = 12.5 V
f = 500 MHz
Tj = 25 °C

21

IC (A)

3

Philips Semiconductors Product specification

UHF power transistor BLW80

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T

=25°C

h

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC(A) η (%) zi(Ω) YL (mS)

CE

470 12,5 4 < 0,63 > 8,0 < 0,53 > 60 2,1 + j2,3 57 − j56

470 13,5 4 − typ 9,5 − typ 65 −−
175 12,5 4 − typ 15,0 − typ 60 2,0 − j2,2 51 − j48

handbook, full pagewidth

50 Ω

C1

C2

C3

C4

L6 L7

L1

T.U.T.

L2

L5

C5

C6

R1L3

+V

CC

R2

L4

C8

50 Ω

C7

MGP565

Fig.7 Class-B test circuit at f = 470 MHz.

List of components:

C1 = 2,2 pF (± 0,25 pF) ceramic capacitor
C2 = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = 5,6 pF (± 0,25 pF) ceramic capacitor
C4 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C5 = 100 pF ceramic feed-through capacitor
C6 = 100 nF polyester capacitor
L1 = stripline (22,5 mm × 6,0 mm)
L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2 × 5 mm
L3 = L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = 51 nH; 3,5 turns Cu wire (1 mm); int. dia. 6 mm; coil length 7 mm; leads 2 × 5 mm
L6 = stripline (10,0 mm × 6,0 mm)
L7 = 15 nH; 1 turn Cu wire (1 mm); int. dia. 5 mm; leads 2 × 5 mm
L1 and L6 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε

thickness 1/16".
R1 = R2 = 10 Ω (± 5%) carbon resistor
Component layout and printed-circuit board for 470 MHz test circuit (Fig.8).

March 1993 6

= 2,74);

r

Philips Semiconductors Product specification

UHF power transistor BLW80

101

handbook, full pagewidth

58

L3

C3

C1

L2

C2

C4

The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to
serve as earth. Earth connections are made by means of hollow rivets.

L1 L6

R1

rivet

R2

L7

C8

L5

C5

C6

C7

L4

+V

CC

Fig.8 Component layout and printed-circuit board for 470 MHz test circuit.

MGP566

March 1993 7

Philips Semiconductors Product specification

UHF power transistor BLW80

10

handbook, halfpage

P

L

(W)

5

0

012

6.5

handbook, halfpage

P

Lnom

(W)

VSWR = 1

6

5.5

5

MGP567

f = 470 MHz
typical values

Th = 25 °C

70 °C

VCC = 12.5 V
VCC = 13.5 V

PS (W)

Fig.9

MGP569

VSWR =
6

10

P

S

P

Snom

50

1 1.1 1.2 1.3

V

V

CCnom

CC

15

handbook, halfpage

G

p

(dB)

10

5

0

0

f = 470 MHz
Th = 25 °C
typical values

G

p

η

5

MGP568

VCC = 12.5 V
VCC = 13.5 V

PL (W)

150

η

(%)

100

50

0

10

Fig.10

Conditions for R.F. SOAR

f = 470 MHz
Th = 70 °C
R
V
PS=P

= 0,6 K/W

th mb-h

= 12,5 V or 13,5 V

CCnom

Snom

at V

and VSWR = 1 measured in the

CCnom

circuit of Fig.7.
The transistor has been developed for use with

unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other that the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio, with VSWR as
parameter.

The graph applies to the situation in which the drive
(P

S/PSnom

) increases linearly with supply over-voltage

ratio.

Fig.11

March 1993 8

Philips Semiconductors Product specification

UHF power transistor BLW80

OPERATING NOTE

Below 300 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.

20

handbook, halfpage

G

p

(dB)

15

10

5

100

Measuring conditions:

VCC= 12,5 V

=4W

P

L

=25°C

T

h

typical values

MGP570

power gain versus frequency

(class-B operation)

300 500

f (MHz)

Fig.12

10

handbook, halfpage

ri, x

i

(Ω)

5

0

−5
100

Measuring conditions:

VCC= 12,5 V

=4W

P

L

=25°C

T

h

typical values

input impedance (series components)
versus frequency (class-B operation)

r

i

x

i

300 500

r

i

x

i

f (MHz)

Fig.13

MGP571

22

handbook, halfpage

Measuring conditions:

VCC= 12,5 V
P
T
typical values

load impedance (parallel components)
versus frequency (class-B operation)

R

L

(Ω)

20

18

16

100

=4W

L

=25°C

h

MGP572

C

L

R

L

300 500

f (MHz)

Fig.14

−10

(pF)

−30

−50

−70

C

L

March 1993 9

Philips Semiconductors Product specification

UHF power transistor BLW80

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D

A

Q

N

1

N

N

3

L

H

D

1

D

2

H
b

4

ceramic
BeO

metal

A

w

X

c

A

M

1

M

M

1

detail X

W

α

3

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

OUTLINE
VERSION

SOT122A

A

5.97

4.74

b

5.85

5.58

D

6.48

6.22

D

1

2

27.56

7.24

25.78

6.93

REFERENCES

cM

D

0.18

7.50

0.14

7.23

IEC JEDEC EIAJ

L

H

9.91

3.18

9.14

2.66

March 1993 10

N

M

1

11.82

1.66

11.04

1.39

1

NN

max.

3.86

1.02

2.92

PROJECTION

Q

3

3.38

2.74

EUROPEAN

W

8-32

UNC

ISSUE DATE

w

1

0.381

97-04-18

α

90°

Philips Semiconductors Product specification

UHF power transistor BLW80

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

March 1993 11