Datasheet blv2048 DATASHEETS (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D374

BLV2048

UHF push-pull power transisto r

Preliminary specification

1999 Apr 23

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

FEATURES

• Emitter ballasting resistors for optimum temperature
profile

• Gold metallization ensures excellent reliability

• Internal input and output matc hing fo r an easy design of

wideband circuits.

• AlN substrate package for environmental safety

• Linear amplification with low distortion

• Low spectral regrowth in multichannel power amplifiers

according to IS-95.

APPLICATIONS

• Common emitter class-AB operati on in base stations for
PCN (Personal Communication Network): 1805 ­1880 MHz and PCS (Personal Communication
Services): 1910 - 1990 MHz.

DESCRIPTION

NPN silicon planar push-pull power transistor in a 4-lead
AIN SOT494A flange package with two ceramic caps.
The emitters are connected to the flange.

PINNING - SOT494A

PIN SYMBOL DESCRIPTION

1 c collector 1
2 c collector 2
3 b base 1
4 b base 2
5 e emitter, connected to flange

ook, halfpage

1

3

Top view

2

4

MBK202

Fig.1 Simplified outline.

5

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

d

(dBc)

CW, class-AB 2000 26 120 ≥8 ≥40 −

2-tone, class-AB f

= 2000.0; f2= 2000.1 26 120 (PEP) ≥8.5 ≥33 ≤−28

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134)
Per section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3V
collector current (DC) − 20 A
average collector current − 10 A
total power dissipation Tmb=25°C − 415 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

im

1999 Apr 23 2

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

R

th mb-h

Note

1. Thermal resistance is determined under nominal 2-tone RF operating conditions.

CHARACTERISTICS

T

=25°C; per section; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

thermal resistance from junction to
heatsink

thermal resistance from mounting

PL= 120 W(PEP); Th=40°C; note 1:
total device; both sections equally loaded

≤0.6 K/W

0.2 K/W

base to heatsink

collector-base breakdown voltage open emitter; IC=40mA 65 −−V
collector-emitter breakdown

open base; IC=120mA 27 −−V

voltage
emitter-base breakdown voltage open collector; IE=40mA 3 −−V
collector leakage current VCE=26V; VBE=0 −−8mA
DC current gain VCE=10V; IC=4A 45 − 100
collector capacitance VCB=26V; IE=ie= 0;

− 72 − pF

f = 1 MHz; note 1

feedback capacitance VCE=26V; IC= 0; f = 1 MHz − 41 − pF

Note

1. Capacitance of die only.

1999 Apr 23 3

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

100

h

FE

80

60

40

20

0

0246810

VCE=10V.

I

C

(mA)

Fig.2 DC current gain as a function of collector

current (per section); typical values.

160

handbook, halfpage

C

re

(pF)

120

80

40

0

0102030

f=1MHz.

VCB (V)

Fig.3 Feedback capacitance as a function of

collector-base voltage (per section);
typical values.

MBK397

1999 Apr 23 4

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit; bias circuit: Ri=0.2Ω.

h

MODE OF

OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

d

im

(dBc)

ACP

(dBc)

CW, class-AB 2000 26 2x300 120 ≥8 ≥40 −−

2-tone, class-AB f
CDMA, class-AB 2000 26 2x500 25 typ. 9 typ. 22 −

= 2000.0; f2= 2000.1 26 2x300 120 (PEP) ≥8.5 ≥33 ≤−28 −

1

≤−46

(note 1)

Notes

1. CDMA testsignal with peak to average ratio of 11.9dB.

ACP is measured at +/- 885 kHz offset from the centre of the channel (2000 MHz) using a spectrum analyzer with a
resolution set to 30 kHz

Ruggedness in class-AB operation

The BLV2048 is capable of withstanding a load mismatch corresp onding to VSWR = 3 : 1 through all phases under the
following conditions : f

= 2000.0 MHz; f2= 2000.1 MHz; VCE= 26 V; ICQ= 2 x 300 mA; PL= 120 W (PEP); Tmb=25°C.

1

12

G

P

(dB)

10

(1)

(2)

8

6

4

2

0

0 20406080100120140

(1) ICQ= 2x300 mA
(2) I

= 2x100 mA

CQ

(3) I

= 2x50 mA

CQ

V

=26V; R1=R2=0; f=2000MHz

CE

(3)

P

Fig.4 Power gain and collector efficiency as a

function of load power; typical values.

(W)

L

60

η

C

(%)

50

G

P

η

C

40

30

20

10

0

12

G

P

(dB)

10

(1)

(2)

8

(3)

6

4

2

0

0 20406080100120140

(1) ICQ= 2x300 mA
(2) I

= 2x100 mA

CQ

(3) I

= 2x50 mA

CQ

V

=26V; R1=R2=2.4Ω; f = 2000 MHz

CE

G

P

η

C

60

η

C

(%)

(3)

50
(2)
(1)

40

30

20

10

0

(W)

P

L

Fig.5 Power gain and collector efficiency as a

function of load power; typical values.

1999 Apr 23 5

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

160

P

L

(W)

120

80

40

0

048121620

(1)

(2)

(3)

(W)

P

D

(1) VCE=28V
(2) V

=26V

CE

(3) V

=24V

CE

I

= 2x50mA; R1 = R2 = 0; f= 2000MHz

CQ

Fig.6 Load power as a function of drive power;

typical values.

160

P

L

(W)

120

80

40

0

048121620

(3)

(2)

(1)

(W)

P

D

(1) ICQ= 2x300 mA
(2) I

= 2x100 mA

CQ

(3) I

= 2x50 mA

CQ

V

=26V; R1=R2=2.4Ω; f = 2000 MHz

CE

Fig.7 Load power as a function of drive power;

typical values.

12

G

P

(dB)

10

8

6

4

2

0

04080120160

G

P

(1)

(2)
(3)

(3)

(PEP) (W)

P

L

(2)

(1)

η

C

60

η

C

(%)

50

40

30

20

10

0

12

G

P

(dB)

8

4

0

04080120160

G

P

η

C

(PEP) (W)

P

L

60

η

C

(%)

50

40

30

20

10

0

(1) ICQ= 2x300 mA
(2) I

= 2x100 mA

CQ

(3) I

= 2x50 mA

CQ

V

=26V; R1=R2=0; f1= 2000 MHz; f2=2000.1MHz

CE

Fig.8 Power gain and collector efficiency as a

functions of peak envelope load power;
typical values.

ICQ= 2x300 mA; VCE=26V; R1=R2=2.4Ω;
f

= 2000 MHz; f2=2000.1MHz

1

Fig.9 Power gain and collector efficiency as a

function of peak envelope load power;
typical values.

1999 Apr 23 6

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

160

P

L

(PEP)

(W)

120

80

40

0

0246810

(1) (2) (3)

P

D

(PEP) (W)

(1) ICQ= 2x300 mA
(2) I

= 2x100 mA

CQ

(3) I

= 2x50 mA

CQ

V

=26V; R1=R2=0; f1= 2000 MHz; f2=2000.1MHz

CE

Fig.10 Peak envelope load power as a function of

peak envelope drive power; typical values.

160

P

L

(PEP)

(W)

120

80

40

0

0246810

(1)

(PEP) (W)

P

D

(2)

(3)

(1) VCE=28V
(2) V

=26V

CE

(3) V

=24V

CE

I

= 2x300 mA; R1 = R2 = 2.4 Ω; f1= 2000 MHz; f2=2000.1MHz

CQ

Fig.11 Peak envelope load power as a function of

peak envelope drive power; typical values.

0

d

3

(dBc)

(1)

-20

(2)
(3)

-40

-60

04080120160

(PEP ) (W)

P

L

(1) ICQ= 2x50 mA
(2) I

= 2x100 mA

CQ

(3) I

= 2x300 mA

CQ

V

=26V; R1=R2=0; f1= 2000 MHz; f2=2000.1MHz

CE

Fig.12 Intermodulation distortion as a function of

peak envelope load power; typical values.

0

d

3

(dBc)

-20

(1)

(2)

(3)

-40

-60
04080120160

(PEP) (W)

P

L

(1) ICQ= 2x100 mA
(2) I

= 2x300 mA

CQ

(3) I

= 2x500 mA

CQ

V

=26V; R1=R2=2.4Ω; f1=2000MHz; f2= 2000.1 MHz

CE

Fig.13 Intermodulation products as a function of

peak envelope load power; typical values.

1999 Apr 23 7

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

0

d

im

(dBc)

-20

d

3

d

(PEP) (W)

P

L

5

-40

-60
04080120160

ICQ= 2x100 mA; VCE=26V; R1=R2=0;
f

= 2000 MHz; f2=2000.1MHz

1

Fig.14 Intermodulation products as a function of

peak envelope load power; typical values.

0

d

im

(dBc)

-20

d

3

-40

d

5

-60
04080120160

PL (PEP) (W)

ICQ= 2x300 mA; VCE=26V; R1=R2=2.4Ω;
f

= 2000 MHz; f2=2000.1MHz

1

Fig.15 Intermodulation products as a function of

peak envelope load power; typical values.

0

d

3

(dBc)

-20

-40

-60
04080120160

(PEP ) (W)

P

L

ICQ= 2x300 mA; VCE=26V; R1=R2=0;
f

= 2000 MHz; f2= 2000.1 MHz

1

Fig.16 Minimal intermodulation and corresponding

V

as a function of peak envelope load

BE

0.76
V

BE

(V)

0.72

d

3

0.68

V

BE

0.64

0

ACP

R

(dBc)

-20

-40

-60
0 10203040

(W)

P

L

ICQ= 2x500m A; VCE=26V; R1=R2=2.4Ω;
Measured at 885 kHz offset with 30 kHz bandwidth

CDMA testsignal with 11.9 dB peak to average ratio

Fig.17 Adjacent channel power as a function of the

load power; typical values.

power; typical values.

1999 Apr 23 8

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

0

Return

Losses

PCN

(dBc)

-20

-40

-60
1800 1850 1900 1950 2000

VCE=26V; ICQ= 2x300 mA; PL=120W; R1=R2=0;
Optimized for respectively the PCN-b and and PCS-ba nd

f (MHz)

Fig.18 Input return losses as a function of

frequency; typical values.

PCS

12

G

P

(dB)

10

8

6

4

2

0

1800 1850 1900 1950 2000

(1) Input tuned for minimal return losses
(2) Input tuned at 1.95 GHz
V

=26V; ICQ= 2x300 mA; PL= 120 W (PEP)

CE

(1)

(2)

η

C

G

P

f (MHz)

60

η

(%)

50

40

30

20

10

0

Fig.19 Power gain and collector efficiency as a

functions of frequency; typical values.

C

handbook, halfpage

5

Z

i

(Ω)

4

MBK403

handbook, halfpage

r

i

Z

(Ω)

3

L

2

MBK404

R

L

1

3

0

2

1

0
1700 1900

VCE=26V; ICQ= 2x300 mA; PL= 120 W (total device);
T

=25°C.

mb

1800 2000

Fig.20 Input impedance per secti on as a function of

frequency (series components);
typical values.

x

i

f (MHz)

−1
X

L

−2

−3

1700 1900

VCE=26V; ICQ= 2x300 mA; PL= 120 W (total device);
T

=25°C.

mb

1800 2000

f (MHz)

Fig.21 Load impedance per secti on as a function of

frequency (series components);
typical values.

1999 Apr 23 9

Philips Semiconductors Preliminary specification

UHF push-pull power tr ans ist or BLV2048

Fig.22 Class-AB test circuit for 2000 MHz.

1999 Apr 23 10

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C13,
C17, C21, C22

C3, C4, C19,
C20

C5, C9, C14,
C23

C6, C10, C16,
C25

C7, C11 multilayer ceramic chip capacitor, note 2 100 pF
C8, C12 multilayer ceramic chip capacitor, note 2 18 pF
C18 multilayer ceramic chip capacitor; note 1 1 .2 pF
C15, C24 tantalum SMD capacitor 4.7 µF, 50 V
L1, L3, L28,

L30
L2, L29 semi-rigid cable 50 Ω length32 mm;

L4 L5, L9, L10 stripline; note 3 25 Ω length 5 mm;

L6, L11 stripline; note 3 12.5 Ω length 5.8 mm;

L7, L12 stripline; note 3 7.3 Ω length 10.6 mm;

L8, L13 2 turns enamelled 1 mm copper wire 12 nH int.dia. 3 mm;

L14, L23 stripline; note 3 43.7 Ω length 12.5 mm;

L15, L19 stripline; note 3 5.9 Ω length 6.5 mm;

L16, L20 stripline; note 3 5.9 Ω length 5 mm;

L17, L21 stripline; note 3 9.5 Ω length 2.5 mm;

L18, L22 stripline; note 3 25 Ω length 16 mm;

L24, L25, L26,
L27

R1, R2 SMD resistor 2.4 Ω type PRC201
R3, R4 SMD resistor 10 Ω type 0603

multilayer ceramic chip capacitor; note 1 10 pF

Tekelec variable capacitor; type 37271 0.6 to 4.5 pF

multilayer ceramic chip capacitor; note 1 10 nF

tantalum SMD capacitor 10 µF, 35 V

stripline; note 3 30 Ω length16 mm;

width 2 mm

width 2.2 mm

width 2.68 mm

width 6.4 mm

width 11.7 mm

length 4 mm

width 1 mm

width 15 mm

width 15 mm

width 8.8 mm

width 2.68 mm

grade 4B1 ferroxcube chip-bead 4322 020 34420

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. American Technical Ceramics type 100A or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε
thickness 0.64 mm.

1999 Apr 23 11

= 6.15);

r

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

40 40

60

+Vbias +Vc

L6

L11

C4

L8

L13

C8

L7

L12

C12

L15
L19

C19

C18

L14

L17 L18

L16
L20

L23

C13

C14

C22

C23

C5

C6

R1

L1

50Ohm

Input Output

+Vbias +Vc

Dimensions in mm.
The components are situated on one side of the copper-clad Teflon board, the other side is unetched and serves as a ground plane.

Earth connections from the compone nt side to the ground plane are made by through metalliza tion.

L2

L3

C1

C2

L4
L9

C10

C7

L5

C3

L10

C11

R2

C9

C15

L24

C16

L25

C17

C21

L26

L27

C24

L28

L29

L30

50Ohm

C25

R3

C20

L22L21

R4

Fig.23 Component layout for 2000 MHz class-AB test circuit.

1999 Apr 23 12

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

PACKAGE OUTLINE

Flanged double-ended ceramic (AIN) package; 2 mounting holes; 4 leads SOT494A

Package under

development

Philips Semiconductors reserves the

right to make changes without notice.

D

A

D

1

U

1

q

H

1

1

H

U

2

A

3

e

2

4

b

0 5 10 mm

scale

F

B

C

w

M

C

2

p

5

w

M

3

w

M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

A

11.81

5.26

mm

OUTLINE
VERSION

SOT494A 99-03-30

4.60

0.207

0.181

11.56

0.465

0.455

c

Db

D

EE

1

33.96

31.37

0.15

28.02

0.10

1.337

0.006

1.103

0.004

IEC JEDEC EIAJ

30.61

1.235

1.205

10.26

10.06

0.404

0.396

1

10.29

15.75

10.03

0.405

0.62

0.395

REFERENCES

U

41.28

41.02

1.625

1.615

U

w

2

1

10.29

10.03

0.405

0.395

1

ISSUE DATE

F

e

1.66

1.60

0.065

0.063

H

16.74

16.48

0.659

0.649

H

27.81

27.05

1.095

1.065

p

1

3.30

3.05

0.130

0.120

qw

Q

2.21

36.07

2.06

0.087

1.42

0.081

EUROPEAN

PROJECTION

w

3

2

0.250.25 0.51

0.010.01 0.02

1999 Apr 23 13

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV2048

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such a pplic ations do so at thei r own ri sk and agree to fully inde mnify Philips for any d amages resulting from such
improper use or sale.

1999 Apr 23 14

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04547-130 SÃO P AUL O, SP, Brazil,
Tel.[phone], Fax. + 55 11 8212382

Spain: Balmes 22, 08007 BARCELONA,
Tel.[phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel.[phone],Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel.[phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Tai wan Tel. [phone], F a x. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel.[phone], Fax. [phone]

Turkey: Talatpa sa Cad. No. 5, 80640 GÜLTEPE/ ISTA NB UL ,
Tel.[phone],Fax. [phone]

Ukrain e: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semicond uctors L td., 276 B ath Road, Haye s,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel.[phone], Fax. [phone]

Uruguay: see South America
Vietnam: see S ingapore
Yugoslavia: PHILIP S , Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproducti on in whole or in part is prohibited witho ut the prior written consent of the copyrigh t owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liabil ity will be accepte d by the publisher for any conseque nce of its use. Publicatio n thereo f does not con vey nor imply any license
under patent- or other industrial or intell ectua l prope rty rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands budgetnum/printrun/ed/pp15 Date of release: 1999 Apr 23 Document order number: 9397 750 05829