Datasheet blt94 DATASHEETS (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D175

BLT94

UHF power transistor

Product specification
Supersedes data of 1997 Nov 04

1998 Jan 28

Philips Semiconductors Product specification

UHF power transistor BLT94

FEATURES

• Emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

PINNING

PIN DESCRIPTION

1, 4, 5, 8 emitter

2, 3 base
6, 7 collector

APPLICATIONS

• Common emitter class-AB and B operation in portable
radio transmitters in the 900 MHz communication band.

handbook, halfpage

85

DESCRIPTION

NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A package.

14

Top view

MBK150

Fig.1 Simplified outline SOT409A.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

≤ 60 °C in a common emitter test circuit.

mb

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

(%)

CW, class-AB 900 7.5 6 ≥8 ≥50

typ. 10 typ. 60

η

C

1998 Jan 28 2

Philips Semiconductors Product specification

UHF power transistor BLT94

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 3V
collector current (DC) − 2.5 A
total power dissipation Tmb≤ 60 °C − 13 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

thermal resistance from junction to

Tmb≤ 60 °C; P

= 13 W 8 K/W

tot

mounting base

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

Tmb=60°C.

Fig.2 DC SOAR.

MGM525

V

(V)

CE

2

1998 Jan 28 3

Philips Semiconductors Product specification

UHF power transistor BLT94

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

collector-base breakdown voltage open emitter; IC=20mA 20 −−V
collector-emitter breakdown voltage open base; IC=40mA 10 −−V
emitter-base breakdown voltage open collector; IE=4mA 3 −−V
collector leakage current VBE= 0; VCE= 7.5 V −−1mA
DC current gain IC= 1.2 A; VCE=5V 25 −−
collector capacitance IE=ie= 0; VCB= 7.5 V; f = 1 MHz − 24 − pF
feedback capacitance IC= 0; VCE= 7.5 V; f = 1 MHz − 17 − pF

100

handbook, halfpage

h

FE

80

60

40

20

0

VCE= 5V; Tj=25°C.
Measured under pulse conditions: tp≤ 300 µs; δ≤0.001.

0.4 0.8 1.2 1.6

0 2.0

MGM526

IC (A)

Fig.3 DC current gain as a function of collector

current; typical values.

50

handbook, halfpage

C

c

(pF)

40

30

20

10

0

020

IE=ie= 0; f = 1 MHz; Tj=25°C.

4 8 12 16

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

MGM527

VCB(V)

1998 Jan 28 4

Philips Semiconductors Product specification

UHF power transistor BLT94

APPLICATION INFORMATION

RF performance at T

≤ 60 °C in a common emitter test circuit (see Fig.7).

mb

MODE OF OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 900 7.5 50 6 ≥8 ≥50

typ. 10 typ. 55

Ruggedness in class-AB operation

The BLT94 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-AB operation; V

η

G

MBK387

C

p

14

handbook, halfpage

G

p

(dB)

12

10

8

6

4

2

= 9 V; PL= 6 W and f = 900 MHz; Tmb≤ 60 °C.

CE

70

η

C

(%)

60

50

40

30

20

10

10

handbook, halfpage

P

L

(W)

8

6

4

2

MBK388

0

010

CW, class-AB operation; VCE= 7.5 V; ICQ=50mA;
f = 900 MHz; T

2468

≤ 60 °C.

mb

P

0

(W)

L

Fig.5 Power gain and collector efficiency as

functions of load power; typical values.

1998 Jan 28 5

0

0 0.4 0.8 1.6

CW, class-AB operation; VCE= 7.5 V; ICQ=50mA;
f = 900 MHz; T

mb

≤ 60 °C.

1.2
PD (W)

Fig.6 Load power as a function of drive power;

typical values.

Philips Semiconductors Product specification

UHF power transistor BLT94

Test circuit information

handbook, full pagewidth

input

50 Ω

C1

C2

V

C13

C5

R1

C3

L1

L2

C4

BE

V

CE

C10

C8

C11

L7

C6 C7

L4

L5

L3

DUT

L6

C9

Fig.7 Common emitter test circuit for class-AB operation at f = 900 MHz.

L8

C12

output
50 Ω

MGM531

1998 Jan 28 6

Philips Semiconductors Product specification

UHF power transistor BLT94

List of components used in test circuit (see Figs 7 and 8).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2 multilayer ceramic chip capacitor; note 1 2.7 pF
C3 multilayer ceramic chip capacitor; note 1 82 pF
C4 multilayer ceramic chip capacitor; note 1 15 pF
C5 multilayer ceramic chip capacitor 1 nF
C6 multilayer ceramic chip capacitor; note 1 100 pF
C7 multilayer ceramic chip capacitor 39 nF
C8 electrolytic capacitor 4.7 µF, 10 V
C9, C10 multilayer ceramic chip capacitor; note 1 6.8 pF
C11 multilayer ceramic chip capacitor; note 1 4.3 pF
C12 multilayer ceramic chip capacitor; note 1 0.7 pF
C13 electrolytic capacitor 10 µF, 10 V
L1 stripline; note 2 50 Ω 3.17 x 2.28 mm
L2 stripline; note 2 50 Ω 11 x 2.28 mm
L3 5 turns 0.5 mm enamelled copper wire int. dia.=3mm

leads = 2 x 7.5 mm
L4 chipbead 1µH
L5 2 turns 1 mm enamelled copper wire int. dia.=6mm;

leads = 2 x 7.5 mm
L6 stripline; note 2 50 Ω 3.82 x 2.28 mm
L7 stripline; note 2 50 Ω 6.18 x 2.28 mm
L8 stripline; note 2 50 Ω 5.62 x 2.28 mm
R1 SMD resistor 27 Ω

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (ε
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.

1998 Jan 28 7

= 2.2);

r

Philips Semiconductors Product specification

UHF power transistor BLT94

handbook, full pagewidth

C5

C13

55.9

30.9

V

BE

+

R1

L4

L3

V

CE

+

C8

C6
C7

L5

C3

L1

C1

C2

Dimensions in mm.

The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.

L2 L6 L7 L8

BLT94

C4 C12

C9 C10

C11

MGM532

Fig.8 Printed-circuit board and component layout for 900 MHz class-AB test circuit in Fig.7.

1998 Jan 28 8

Philips Semiconductors Product specification

UHF power transistor BLT94

handbook, halfpage

6

Z

i

(Ω)

4

r

i

2

0

−2
700 800 900 1000

CW, class-AB operation; VCE= 7.58 V; ICQ=50mA;

= 6 W; Tmb≤ 60 °C.

P

L

x

i

MGM528

f (MHz)

Fig.9 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

6

Z

L

(Ω)

4

2

0

−2
700 800 900 1000

CW, class-AB operation; VCE= 7.5 V; ICQ=50mA;

= 6 W; Tmb≤ 60 °C.

P

L

R

L

X

L

MGM529

f (MHz)

Fig.10 Load impedance as a function of frequency

(series components); typical values.

16

handbook, halfpage

G

p

(dB)

12

8

4

0

700 800 900 1000

CW, class-AB operation; VCE= 7.5 V; ICQ=50mA;

= 6 W; Tmb≤ 60 °C.

P

L

f (MHz)

Fig.11 Power gain as a function of frequency

(series components); typical values.

MGM530

dbook, halfpage

Z

i

Z

L

Fig.12 Definition of transistor impedance.

MBA451

1998 Jan 28 9

Philips Semiconductors Product specification

f

UHF power transistor BLT94

MOUNTING RECOMMENDATIONS

Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.

of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted

th(mb-h)

ull pagewidth

3.607.38

1.87 (2×)

4.60

0.60 (4×)

0.80 (2×)

0.50 (12×)

1.00 (8×)

1.00 (9×)

MGK390

Dimensions in mm.

Fig.13 Reflow soldering footprint for SOT409A.

1998 Jan 28 10

Philips Semiconductors Product specification

UHF power transistor BLT94

PACKAGE OUTLINE

Ceramic surface mounted package; 8 leads SOT409A

D

A

D

2

H

1

85

H

14

e

b

0 2.5 5 mm

B

w

B

2

w

1

scale

c

L

E

2

A

α

Q

1

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

OUTLINE
VERSION

SOT409A

A

2.36

2.06

0.093

0.081

0.58

0.43

0.023

0.017

D

2

0.23

5.94

5.03

0.234

0.198

5.16

5.00

0.203

0.197

0.18

0.009

0.007

IEC JEDEC EIAJ

4.93

4.01

0.194

0.163

0.158

0.157

REFERENCES

E

2

4.14

3.99

UNIT cbDE

inches

1.27

0.050

e

HH

7.47

7.26

0.294

0.286

1998 Jan 28 11

1

4.39

4.24

0.173

0.167

LQ

1.02

0.10

0.51

0.00

0.040

0.004

0.020

0.000

1

0.25

0.010

PROJECTION

w

w

1

0.25

0.010

EUROPEAN

2

α

7°
0°

7°
0°

ISSUE DATE

98-01-27

Philips Semiconductors Product specification

UHF power transistor BLT94

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jan 28 12

Philips Semiconductors Product specification

UHF power transistor BLT94

NOTES

1998 Jan 28 13

Philips Semiconductors Product specification

UHF power transistor BLT94

NOTES

1998 Jan 28 14

Philips Semiconductors Product specification

UHF power transistor BLT94

NOTES

1998 Jan 28 15

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© Philips Electronics N.V. 1998 SCA57
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Printed in The Netherlands 125108/00/03/pp16 Date of release: 1998 Jan 28 Document order number: 9397 75003235